Insulin Secretion and Incretin Hormone Concentration in Women with Previous Gestational Diabetes Mellitus

BackgroundWe examined the change in the levels of incretin hormone and effects of glucose-dependent insulinotropic polypeptide (GIP) and glucagon-like peptide 1 (GLP-1) on insulin secretion in women with previous gestational diabetes (pGDM).MethodsA 75-g oral glucose tolerance test (OGTT) was conducted on 34 women with pGDM. In addition, 11 women with normal glucose tolerance, matched for age, height and weight, were also tested. The insulin, GIP, GLP-1, and glucagon concentrations were measured, and their anthropometric and biochemical markers were also measured.ResultsAmong 34 women with pGDM, 18 had normal glucose tolerance, 13 had impaired glucose tolerance (IGT) and 1 had diabetes. No significant differences were found in GLP-1 concentration between the pGDM and control group. However, a significantly high level of glucagon was present in the pGDM group at 30 minutes into the OGTT. The GIP concentration was elevated at 30 minutes and 60 minutes in the pGDM group. With the exception of the 30-minute timepoint, women with IGT had significantly high blood glucose from 0 to 120 minutes. However, there was no significant difference in insulin or GLP-1 concentration. The GIP level was significantly high from 0 to 90 minutes in patients diagnosed with IGT.ConclusionGLP-1 secretion does not differ between pGDM patients and normal women. GIP was elevated, but that does not seem to induce in increase in insulin secretion. Therefore, we conclude that other factors such as heredity and environment play important roles in the development of type 2 diabetes

Development of suction pipe design criterion to secure oil return to compressor

In the present work, phenomena associated with counter current flow limitation (CCFL) were experimentally investigated using small diameter tubes in order to suggest criterion for which the oil return is secured. The test section is made of Pyrex glass tube to allow visual observation. The inner diameter of the test tube is 7mm and the height is 1m. The inclination of test tubes varied from vertical to crank type with various horizontal lengths. Waterair flow and lubricant oil-air flow were examined through a series of experiment at various liquid flow rates. In this experimental study, flow reversal and flooding phenomena were visually observed and two-phase flow rate were measured. Flow reversal point represents the air flow rate when the liquid film begins to flow downwards in the tube below the liquid inlet location. Whole supplied liquid flows upward when the gas flow rate is larger than this value. So the flow reversal point can be interpreted as oil return criterion and the flow reversal points were measured using various shape of test section in a wide range of liquid flow rate. The gas velocities for the flow reversal point appeared to be similar over a certain range of liquid flow rate. Flooding point was defined as the air flow rate when liquid starts to flow above the liquid inlet part. The air flow rate needed to cause flooding is inversely proportional to the liquid flow rate. Both flow reversal and flooding velocity also depend on the inclination angle, horizontal length and liquid property

Modulating the Pattern Quality of Micropatterned Multilayer Films Prepared by Layer-by-Layer Self-Assembly

Patterned multilayer films composed of poly(allylamine hydrochloride) (PAH) and poly(sodium 4-styrenesulfonate) (PSS) were prepared using dip and spin self-assembly (SA) methods. A silicon substrate was patterned with a photoresist thin film using conventional photolithography, and PAH/PSS multilayers were then deposited onto the substrate surface using dip or spin SA. For spin SA, the photoresist on the substrate was retained, despite the high centrifugal forces involved in depositing the polyelectrolytes (PEs). The patterned multilayer films were formed by immersing the PE-coated substrates in acetone for 10 min. The effect of ionic strength on the pattern quality in dip and spin multilayer patterns (line-edge definition and surface roughness of the patterned region) was investigated by increasing the salt concentration in the PE solution (range 0−1 M). In dip multilayer patterns, the presence of salt increased the film surface roughness and pattern thickness without any deformation of pattern shape. The spin multilayer patterns formed without salt induced a height profile of about 130 nm at the pattern edge, whereas the patterns formed with high salt content (1 M) were extensively washed off the substrates. Well-defined pattern shapes of spin SA multilayers were obtained at an ionic strength of 0.4 M NaCl. Multilayer patterns prepared using spin SA and lift-off methods at the same ionic strength had a surface roughness of about 2 nm, and those prepared using the dip SA and lift-off method had a surface roughness of about 5 nm. The same process was used to prepare well-defined patterns of organic/metallic multilayer films consisting of PE and gold nanoparticles. The spin SA process yielded patterned multilayer films with various lengths and shapes.This work was supported by the Ministry of Education through the Brain Korea 21 Program at Seoul National University, funded in part by the National Research Laboratory Program (Grant M1-0104-00-0191), and the Australian Research Council (Discovery Project and Federation Fellowship schemes)

High-Speed, Inkjet-Printed Carbon Nanotube/Zinc Tin Oxide Hybrid Complementary Ring Oscillators

The materials combination of inkjet-printed single-walled carbon nanotubes (SWCNTs) and zinc tin oxide (ZTO) is very promising for large-area thin-film electronics. We compare the characteristics of conventional complementary inverters and ring oscillators measured in air (with SWCNT p-channel field effect transistors (FETs) and ZTO n-channel FETs) with those of ambipolar inverters and ring oscillators comprised of bilayer SWCNT/ZTO FETs. This is the first such comparison between the performance characteristics of ambipolar and conventional inverters and ring oscillators. The measured signal delay per stage of 140 ns for complementary ring oscillators is the fastest for any ring oscillator circuit with printed semiconductors to date