Growth of detector-grade CZT by Traveling Heater Method (THM): An advancement

In this present work we report the growth of Cd{sub 0.9}Zn{sub 0.1}Te doped with In by a modified THM technique. It has been demonstrated that by controlling the microscopically flat growth interface, the size distribution and concentration can be drastically reduced in the as-grown ingots. This results in as-grown detector-grade CZT by the THM technique. The three-dimensional size distribution and concentrations of Te inclusions/precipitations were studied. The size distributions of the Te precipitations/inclusions were observed to be below the 10-{micro}m range with the total concentration less than 10{sup 5} cm{sup -3}. The relatively low value of Te inclusions/precipitations results in excellent charge transport properties of our as-grown samples. The ({mu}{tau}){sub e} values for different as-grown samples varied between 6-20 x 10{sup -3} cm{sup 2}/V. The as-grown samples also showed fairly good detector response with resolution of {approx}1.5%, 2.7% and about 3.8% at 662 keV for quasi-hemispherical geometry for detector volumes of 0.18 cm{sup 3}, 1 cm{sup 3} and 4.2 cm{sup 3}, respectively

Opto-electrical characterization and X-ray mapping of large-volume cadmium zinc telluride radiation detectors

Large-volume cadmium zinc telluride (CZT) radiation detectors would greatly improve radiation detection capabilities and, therefore, attract extensive scientific and commercial interests. CZT crystals with volumes as large as hundreds of centimeters can be achieved today due to improvements in the crystal growth technology. However, the poor performance of large-volume CZT detectors is still a challenging problem affecting the commercialization of CZT detectors and imaging arrays. We have employed Pockels effect measurements and synchrotron X-ray mapping techniques to investigate the performance-limiting factors for large-volume CZT detectors. Experimental results with the above characterization methods reveal the non-uniform distribution of internal electric field of large-volume CZT detectors, which help us to better understand the responsible mechanism for the insufficient carrier collection in large-volume CZT detectors

Structural and optical-properties of CdTe and CdMnTe films

We undertook a detailed investigation of the structural- and optical-properties of CdTe- and Cd1-xMnxTe-semiconductor films deposited by close-spaced vacuum sublimation using thermal evaporation on non-oriented substrates. From our structural- and phase-analysis of the layers, we obtained information on their structure, deformations, grain size, and content of dislocations for films deposited at different substrate temperatures. We considered that despite the presence of defects in the crystals, the films offer promise for fabrication into x-ray detectors. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3013

Correlation of Photoluminescence measurements with the spatial distribution of dislocations in CdZnTe Crystals

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Charge transport properties of CdMnTe radiation detectors

Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe) radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading charge collection is reduced with increasing values of bias voltage. The electron drift velocity was calculated from the rise time distribution of the preamplifier output pulses at each measured bias. From the dependence of drift velocity on applied electric field the electron mobility was found to be μn = (718 ± 55) cm2/Vs at room temperature

Extended defects in as-grown CdZnTe

We characterized samples cut from different locations in as-grown CdZnTe (CZT) ingots, using Automated Infrared (IR) Transmission Microscopy and White Beam X-ray Diffraction Topography (WBXDT), to locate and identify the extended defects in them. Our goal was to define the distribution of these defects throughout the entire ingot and their effects on detectors’ performance as revealed by the pulse-height spectrum. We found the highest- and the lowest- concentration of Te inclusions, respectively, in the head and middle part of the ingot, which could serve as guidance in selecting samples. Crystals with high concentration of Te inclusions showed high leakage current and poor performance, because the accumulated charge loss around trapping centers associated with Te inclusions distorts the internal electric field, affects the carrier transport properties inside the crystal, and finally degrades the detector’s performance. In addition, other extended defects revealed by the WBXDT measurements severely reduced the detector’s performance, since they trap large numbers of electrons, leading to a low signal for the pulse-height spectrum, or none whatsoever. Finally, we fully correlated the detector’s performance with our information on the extended defects gained from both the IR- and the WBXDT-measurements