Negative Differential Resistance and Steep Switching in Chevron Graphene Nanoribbon Field Effect Transistors

Ballistic quantum transport calculations based on the non-equilbrium Green's function formalism show that field-effect transistor devices made from chevron-type graphene nanoribbons (CGNRs) could exhibit negative differential resistance with peak-to-valley ratios in excess of 4800 at room temperature as well as steep-slope switching with 6 mV/decade subtheshold swing over five orders of magnitude and ON-currents of 88$\mu$A/$\mu$m. This is enabled by the superlattice-like structure of these ribbons that have large periodic unit cells with regions of different effective bandgap, resulting in minibands and gaps in the density of states above the conduction band edge. The CGNR ribbon used in our proposed device has been previously fabricated with bottom-up chemical synthesis techniques and could be incorporated into an experimentally-realizable structure

Analysis of ultrafast magnetization switching dynamics in exchange-coupled ferromagnet-ferrimagnet heterostructures

Magnetization switching in ferromagnets has so far been limited to the current-induced spin-orbit-torque effects. Recent observation of helicity-independent all-optical magnetization switching in exchange-coupled ferromagnet ferrimagnet heterostructures expanded the range and applicability of such ultrafast heat-driven magnetization switching. Here we report the element-resolved switching dynamics of such an exchange-coupled system, using a modified microscopic three-temperature model. We have studied the effect of i) the Curie temperature of the ferromagnet, ii) ferrimagnet composition, iii) the long-range RKKY exchange-coupling strength, and iv) the absorbed optical energy on the element-specific time-resolved magnetization dynamics. The phase-space of magnetization illustrates how the RKKY coupling strength and the absorbed optical energy influence the switching time. Our analysis demonstrates that the threshold switching energy depends on the composition of the ferrimagnet and the switching time depends on the Curie temperature of the ferromagnet as well as RKKY coupling strength. This simulation anticipates new insights into developing faster and more energy-efficient spintronics devices

Single shot ultrafast all optical magnetization switching of ferromagnetic Co/Pt multilayers

In a number of recent experiments, it has been shown that femtosecond laser pulses can control magnetization on picosecond timescales, which is at least an order of magnitude faster compared to conventional magnetization dynamics. Among these demonstrations, one material system (GdFeCo ferromagnetic films) is particularly interesting, as deterministic toggle-switching of the magnetic order has been achieved without the need of any symmetry breaking magnetic field. This phenomenon is often referred to as all optical switching (AOS). However, so far, GdFeCo remains the only material system where such deterministic switching has been observed. When extended to ferromagnetic systems, which are of greater interest in many technological applications, only a partial effect can be achieved, which in turn requires repeated laser pulses for full switching. However, such repeated pulsing is not only energy hungry, it also negates the speed advantage of AOS. Motivated by this problem, we have developed a general method for single-shot, picosecond timescale, complete all optical switching of ferromagnetic materials. We demonstrate that in exchange-coupled layers of Co/Pt and GdFeCo, single shot, switching of the ferromagnetic Co/Pt layer is achieved within 7 picoseconds after irradiation by a femtosecond laser pulse. We believe that this approach will greatly expand the range of materials and applications for ultrafast magnetic switching.Comment: 11 pages, 3 figures, supplementary material

Deterministic Domain Wall Motion Orthogonal To Current Flow Due To Spin Orbit Torque.

Spin-polarized electrons can move a ferromagnetic domain wall through the transfer of spin angular momentum when current flows in a magnetic nanowire. Such current induced control of a domain wall is of significant interest due to its potential application for low power ultra high-density data storage. In previous reports, it has been observed that the motion of the domain wall always happens parallel to the current flow - either in the same or opposite direction depending on the specific nature of the interaction. In contrast, here we demonstrate deterministic control of a ferromagnetic domain wall orthogonal to current flow by exploiting the spin orbit torque in a perpendicularly polarized Ta/CoFeB/MgO heterostructure in presence of an in-plane magnetic field. Reversing the polarity of either the current flow or the in-plane field is found to reverse the direction of the domain wall motion. Notably, such orthogonal motion with respect to current flow is not possible from traditional spin transfer torque driven domain wall propagation even in presence of an external magnetic field. Therefore the domain wall motion happens purely due to spin orbit torque. These results represent a completely new degree of freedom in current induced control of a ferromagnetic domain wall

The role of electron and phonon temperatures in the helicity-independent all-optical switching of GdFeCo

Ultrafast optical heating of the electrons in ferrimagnetic metals can result in all-optical switching (AOS) of the magnetization. Here we report quantitative measurements of the temperature rise of GdFeCo thin films during helicity-independent AOS. Critical switching fluences are obtained as a function of the initial temperature of the sample and for laser pulse durations from 55 fs to 15 ps. We conclude that non-equilibrium phenomena are necessary for helicity-independent AOS, although the peak electron temperature does not play a critical role. Pump-probe time-resolved experiments show that the switching time increases as the pulse duration increases, with 10 ps pulses resulting in switching times of ~sim 13 ps. These results raise new questions about the fundamental mechanism of helicity-independent AOS.Comment: 18 pages, 6 figures and supplementary material

Spin-dependent scattering in a silicon transistor

The scattering of conduction electrons off neutral donors depends sensitively on the relative orientation of their spin states. We present a theory of spin-dependent scattering in the two dimensional electron gas (2DEG) of field effect transistors. Our theory shows that the scattering mechanism is dominated by virtual transitions to negatively ionized donor levels. This effect translates into a source-drain current that always gets reduced when donor spins are at resonance with a strong microwave field. We propose a model for donor impurities interacting with conduction electrons in a silicon transistor, and compare our explicit numerical calculations to electrically detected magnetic resonance (EDMR) experiments. Remarkably, we show that EDMR is optimal for donors placed into a sweet spot located at a narrow depth window quite far from the 2DEG interface. This allows significant optimization of spin signal intensity for the minimal number of donors placed into the sweet spot, enabling the development of single spin readout devices. Our theory reveals an interesting dependence on conduction electron spin polarization p_c. As p_c increases upon spin injection, the EDMR amplitude first increases as p_{c}^{2}, and then saturates when a polarization threshold p_T is reached. These results show that it is possible to use EDMR as an in-situ probe of carrier spin polarization in silicon and other materials with weak spin-orbit coupling

Switching of Perpendicularly Polarized Nanomagnets with Spin Orbit Torque without an External Magnetic Field by Engineering a Tilted Anisotropy

Spin orbit torque (SOT) provides an efficient way of generating spin current that promises to significantly reduce the current required for switching nanomagnets. However, an in-plane current generated SOT cannot deterministically switch a perpendicularly polarized magnet due to symmetry reasons. On the other hand, perpendicularly polarized magnets are preferred over in-plane magnets for high-density data storage applications due to their significantly larger thermal stability in ultra-scaled dimensions. Here we show that it is possible switch a perpendicularly polarized magnet by SOT without needing an external magnetic field. This is accomplished by engineering an anisotropy in the magnets such that the magnetic easy axis slightly tilts away from the film-normal. Such a tilted anisotropy breaks the symmetry of the problem and makes it possible to switch the magnet deterministically. Using a simple Ta/CoFeB/MgO/Ta heterostructure, we demonstrate reversible switching of the magnetization by reversing the polarity of the applied current. This demonstration presents a new approach for controlling nanomagnets with spin orbit torque

Three-Dimensional Optical Transformer - Highly Efficient Nanofocusing Device

Using electron-beam-induced deposition and focused-ion-beam milling, we have fabricated and demonstrated a nanofocusing optical transformer with a 3-dimensionally tapered tip. At the tip, the light is confined to 13-by-80-nm area with intensity enhancement exceeding 1500

Diameter-Dependent Electron Mobility of InAs Nanowires

Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V characterizations, the densities of thermally-activated fixed charges and trap states on the surface of untreated (i.e., without any surface functionalization) nanowires are investigated while enabling the accurate measurement of the gate oxide capacitance; therefore, leading to the direct assessment of the field-effect mobility for electrons. The field-effect mobility is found to monotonically decrease as the radius is reduced to sub-10 nm, with the low temperature transport data clearly highlighting the drastic impact of the surface roughness scattering on the mobility degradation for miniaturized nanowires. More generally, the approach presented here may serve as a versatile and powerful platform for in-depth characterization of nanoscale, electronic materials

Sub-nanosecond signal propagation in anisotropy engineered nanomagnetic logic chains

Energy efficient nanomagnetic logic (NML) computing architectures propagate and process binary information by relying on dipolar field coupling to reorient closely-spaced nanoscale magnets. Signal propagation in nanomagnet chains of various sizes, shapes, and magnetic orientations has been previously characterized by static magnetic imaging experiments with low-speed adiabatic operation; however the mechanisms which determine the final state and their reproducibility over millions of cycles in high-speed operation (sub-ns time scale) have yet to be experimentally investigated. Monitoring NML operation at its ultimate intrinsic speed reveals features undetectable by conventional static imaging including individual nanomagnetic switching events and systematic error nucleation during signal propagation. Here, we present a new study of NML operation in a high speed regime at fast repetition rates. We perform direct imaging of digital signal propagation in permalloy nanomagnet chains with varying degrees of shape-engineered biaxial anisotropy using full-field magnetic soft x-ray transmission microscopy after applying single nanosecond magnetic field pulses. Further, we use time-resolved magnetic photo-emission electron microscopy to evaluate the sub-nanosecond dipolar coupling signal propagation dynamics in optimized chains with 100 ps time resolution as they are cycled with nanosecond field pulses at a rate of 3 MHz. An intrinsic switching time of 100 ps per magnet is observed. These experiments, and accompanying macro-spin and micromagnetic simulations, reveal the underlying physics of NML architectures repetitively operated on nanosecond timescales and identify relevant engineering parameters to optimize performance and reliability.Comment: Main article (22 pages, 4 figures), Supplementary info (11 pages, 5 sections