Magnetic Dirac semimetal state of (Mn,Ge)Bi2_2Te4_4

For quantum electronics, the possibility to finely tune the properties of magnetic topological insulators (TIs) is a key issue. We studied solid solutions between two isostructural Z$_2$ TIs, magnetic MnBi$_2$Te$_4$ and nonmagnetic GeBi$_2$Te$_4$, with Z$_2$ invariants of 1;000 and 1;001, respectively. For high-quality, large mixed crystals of Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$, we observed linear x-dependent magnetic properties, composition-independent pairwise exchange interactions along with an easy magnetization axis. The bulk band gap gradually decreases to zero for $x$ from 0 to 0.4, before reopening for $x>0.6$, evidencing topological phase transitions (TPTs) between topologically nontrivial phases and the semimetal state. The TPTs are driven purely by the variation of orbital contributions. By tracing the x-dependent $6p$ contribution to the states near the fundamental gap, the effective spin-orbit coupling variation is extracted. As $x$ varies, the maximum of this contribution switches from the valence to the conduction band, thereby driving two TPTs. The gapless state observed at $x=0.42$ closely resembles a Dirac semimetal above the Neel temperature and shows a magnetic gap below, which is clearly visible in raw photoemission data. The observed behavior of the Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$ system thereby demonstrates an ability to precisely control topological and magnetic properties of TIs

Site- and spin-dependent coupling at the highly ordered h-BN/Co(0001) interface

Using photoelectron diffraction and spectroscopy, we explore the structural and electronic properties of the hexagonal boron nitride (h-BN) monolayer epitaxially grown on the Co(0001) surface. Perfect matching of the lattice parameters allows formation of a well-defined interface where the B atoms occupy the hollow sites while the N atoms are located above the Co atoms. The corrugation of the h-BN monolayer and its distance from the substrate were determined by means of R-factor analysis. The obtained results are in perfect agreement with the density functional theory (DFT) predictions. The electronic structure of the interface is characterized by a significant mixing of the h-BN and Co states. Such hybridized states appear in the h-BN band gap. This allows to obtain atomically resolved scanning tunneling microscopy (STM) images from the formally insulating 2D material being in contact with ferromagnetic metal. The STM images reveal mainly the nitrogen sublattice due to a dominating contribution of nitrogen orbitals to the electronic states at the Fermi level. We believe that the high quality, well-defined structure and interesting electronic properties make the h-BN/Co(0001) interface suitable for spintronic applications.L.V.Ya. acknowledges the RSF (Grant No. 16-42-01093). A.V.T., V.O.S., K.A.B., O.Yu.V., and D.Yu.U. acknowledge St. Petersburg State University for research Grant No. 11.65.42.2017. M.V.K. and I.I.O. acknowledge the RFBR (Grant No. 16-29-06410). C.L. acknowledges the DFG (Grant Nos. LA655-17/1 and LA655-19/1).Peer reviewe

Visualization of graphene grain boundaries through oxygen intercalation

Efficient control over the grain boundaries (GBs) is a vital aspect in optimizing the graphene growth conditions. A number of methods for visualization of GBs were developed for graphene grown on weakly interacting surfaces. Here, we utilize oxygen intercalation to reveal GBs and study their morphology for graphene strongly bound to the cobalt surface. We demonstrate that upon the intercalation of oxygen, GBs in polycrystalline graphene become easily detectable due to graphene cracking and selective oxidation of the substrate, thus giving a direct insight into the graphene micro- and nanostructure by means of different electron microscopy methods, including scanning electron microscopy, photoemission microscopy and low-energy electron microscopy

Nitrogen-doped graphene on a curved nickel surface

Graphene growth and doping are well studied on flat surfaces of various materials. To further advance the technological implementation of graphene-based systems, fundamental studies need more appropriate model templates, whose surfaces would mimic substrates with non-trivial topography. Here, using electron and photoelectron diffraction and photoemission spectroscopy as well, we demonstrate how a curved tungsten crystal covered by a thin nickel film can properly be used as such platform, allowing the fabrication and comprehensive characterization of nitrogen-doped graphene. We show the way in which nitrogen impurities prefer to embed into the graphene matrix at different areas of the curved metallic surface with variable density of atomic steps. In particular, at atomically flat regions with a strong graphene-metal interaction, pyridinic configuration is the most abundant form of dopants, while graphitic nitrogen strongly dominates in places with a weak coupling of graphene to the substrate, i.e., in the vicinity of the surface irregularities. We recognize single crystals with curvilinear surfaces as versatile platforms for the studies of not only low-dimensional materials, but also molecular adsorption, chemical reactions and catalysis on surfaces with complex structure.The authors acknowledge RFBR for research Grants No. 18-29-19178 and No. 19-32-90013, and SPbU Grant No. 73028629. A. M. acknowledges BMBF Grant No. 05K19KER. F. S., D. V. V. and J. E. O. acknowledge the Spanish Ministry of Science and Innovation (Grants MAT-2017-88374-P), Consejo Superior de Investigaciones Cientificas (Grant 2020AEP178) and the Basque Government (Grant IT-1255-19). The authors thank the Helmholtz-Zentrum Berlin für Materialien und Energie for support within the bilateral Russian-German Laboratory program. This work was supported by the German-Russian Interdisciplinary Science Center (G-RISC: M-2019b-13_r) funded by the German Federal Foreign Office via the German Academic Exchange Service (DAAD).Peer reviewe

Direct Spectroscopic Evidence of Magnetic Proximity Effect in MoS2 Monolayer on Graphene/Co

A magnetic field modifies optical properties and provides valley splitting in a molybdenum disulfide (MoS2) monolayer. Here we demonstrate a scalable approach to the epitaxial synthesis of MoS2 monolayer on a magnetic graphene/Co system. Using spin- and angle-resolved photoemission spectroscopy we observe a magnetic proximity effect that causes a 20 meV spin-splitting at the (Gamma) over bar point and canting of spins at the (K) over bar point in the valence band toward the in-plane direction of cobalt magnetization. Our density functional theory calculations reveal that the in-plane spin component at (K) over bar is localized on Co atoms in the valence band, while in the conduction band it is localized on the MoS2 layer. The calculations also predict a 16 meV spin-splitting at the (Gamma) over bar point and 8 meV (K) over bar-(K) over bar' valley asymmetry for an out-of-plane magnetization. These findings suggest control over optical transitions in MoS2 via Co magnetization. Our estimations show that the magnetic proximity effect is equivalent to the action of the magnetic field as large as 100 T

Origin of Giant Rashba Effect in Graphene on Pt/SiC

Intercalation of noble metals can produce giant Rashba-type spin–orbit splittings in graphene. The spin–orbit splitting of more than 100 meV has yet to be achieved in graphene on metal or semiconductor substrates. Here, we report the p-type graphene obtained by Pt intercalation of zero-layer graphene on SiC substrate. The spin splitting of ∼200 meV was observed at a wide range of binding energies. Comparing the results of theoretical studies of different models with the experimental ones measured by spin-ARPES, XPS and STM methods, we concluded that inducing giant spin–orbit splitting requires not only a relatively close distance between graphene and Pt layer but also the presence of graphene corrugation caused by a non-flat Pt layer. This makes it possible to find a compromise between strong hybridization and increased spin–orbit interaction. In our case, the Pt submonolayer possesses nanometer-scale lateral ordering under graphene

Structural instability at the In-terminated surface of the heavy-fermion superconductor CeIrIn5

Driven by reconstruction and relaxation, by the appearance of surface electron states and resonances, the surface properties and related temperature scales of strongly correlated f-materials may differ dramatically from those in the bulk. Applying low energy electron and photoelectron diffraction techniques, momentum-resolved photoelectron spectroscopy and ab initio calculations, we demonstrate that the In-terminated surface of the heavyfermion superconductor CeIrIn5 experiences a reconstruction with a (root 2v x root 2)R45 degrees ordered structure. The latter appears due to the displacement of In atoms with respect to the Ir sublattice. We show that the electronic structure and related properties of the reconstructed In surface differ remarkably from the unreconstructed case. Namely, the predicted surface states with Rashba-type spin splitting do not appear. Our results suggest surface instabilities in similar quasi-two-dimensional strongly correlated f-materials, for which surface reconstructions can be unveiled by means of diffraction techniques