Study of the correlation effects in Yb^+ and implications for parity violation

Calculation of the energies, magnetic dipole hyperfine structure constants, E1 transition amplitudes between the low-lying states, and nuclear spin-dependent parity-nonconserving amplitudes for the ^2S_{1/2} - ^2D_{3/2,5/2} transitions in ^{171}Yb^+ ion is performed using two different approaches. First, we carried out many-body perturbation theory calculation considering Yb^+ as a monovalent system. Additional all-order calculations are carried out for selected properties. Second, we carried out configuration interaction calculation considering Yb as a 15-electron system and compared the results obtained by two methods. The accuracy of different methods is evaluated. We find that the monovalent description is inadequate for evaluation of some atomic properties due to significant mixing of the one-particle and the hole-two-particle configurations. Performing the calculation by such different approaches allowed us to establish the importance of various correlation effects for Yb^+ atomic properties for future improvement of theoretical precision in this complicated system.Comment: 11 pages;v2: minor changes and one reference adde

Electric dipole moment enhancement factor of thallium

The goal of this work is to resolve the present controversy in the value of the EDM enhancement factor of Tl. We have carried out several calculations by different high-precision methods, studied previously omitted corrections, as well as tested our methodology on other parity conserving quantities. We find the EDM enhancement factor of Tl to be equal to -573(20). This value is 20% larger than the recently published result of Nataraj et al. [Phys. Rev. Lett. 106, 200403 (2011)], but agrees very well with several earlier results.Comment: 5 pages; v2: link to supplemental material adde

Mobility-Dependence of the Critical Density in Two-Dimensional Systems: An Empirical Relation

For five different electron and hole systems in two dimensions (Si MOSFET's, p-GaAs, p-SiGe, n-GaAs and n-AlAs), the critical density, $n_c$ that marks the onset of strong localization is shown to be a single power-law function of the scattering rate $1/\tau$ deduced from the maximum mobility. The resulting curve defines the boundary separating a localized phase from a phase that exhibits metallic behavior. The critical density $n_c \to 0$ in the limit of infinite mobility.Comment: 2 pages, 1 figur

Calculation of P,T-odd electric dipole moments for diamagnetic atoms 129^{129}Xe, 171^{171}Yb, 199^{199}Hg, 211^{211}Rn, and 225^{225}Ra

Electric dipole moments of diamagnetic atoms of experimental interest are calculated using the relativistic Hartree-Fock and random-phase approximation methods, the many-body perturbation theory and configuration interaction technique. We consider P,T-odd interactions which give rise to atomic electric dipole moment in the second order of the perturbation theory. These include nuclear Schiff moment, P,T-odd electron-nucleon interaction and electron electric dipole moment. Interpretation of a new experimental constraint of a permanent electric dipole moment of $^{199}$Hg [W. C. Griffith {\it et al.}, Phys. Rev. Lett. {\bf 102}, 101601 (2009)] is discussed.Comment: 9 page

Transition frequency shifts with fine structure constant variation for Fe II: Breit and core-valence correlation correction

Transition frequencies of Fe II ion are known to be very sensitive to variation of the fine structure constant \alpha. The resonance absorption lines of Fe II from objects at cosmological distances are used in a search for the possible variation of \alpha in cause of cosmic time. In this paper we calculated the dependence of the transition frequencies on \alpha^2 (q-factors) for Fe II ion. We found corrections to these coefficients from valence-valence and core-valence correlations and from the Breit interaction. Both the core-valence correlation and Breit corrections to the q-factors appeared to be larger than had been anticipated previously. Nevertheless our calculation confirms that the Fe II absorption lines seen in quasar spectra have large q-factors of both signs and thus the ion Fe II alone can be used in the search for the \alpha-variation at different cosmological epochs.Comment: 7 pages, submitted to Phys. Rev.

Melting transition of an Ising glass driven by magnetic field

The quantum critical behavior of the Ising glass in a magnetic field is investigated. We focus on the spin glass to paramagnet transition of the transverse degrees of freedom in the presence of finite longitudinal field. We use two complementary techniques, the Landau theory close to the T=0 transition and the exact diagonalization method for finite systems. This allows us to estimate the size of the critical region and characterize various crossover regimes. An unexpectedly small energy scale on the disordered side of the critical line is found, and its possible relevance to experiments on metallic glasses is briefly discussed.Comment: 4 pages, 3 figure

Calculation of nuclear spin-dependent parity-nonconserving amplitude for (7s,F=4) --> (7s,F=5) transition in Fr

Many-body calculation of nuclear spin-dependent parity-nonconserving amplitude for (7s,F=4) --> (7s,F=5) transition between hyperfine sublevels of the ground state of $^{211}$Fr is carried out. The final result is <7s,F=5 ||d_PNC|| 7s,F=4> = -0.49 10^{-10} i kappa a.u., where kappa is the dimensionless coupling constant. This is approximately an order of magnitude larger than similar amplitude in Cs. The dominant contribution to kappa is associated with the anapole moment of the nucleus.Comment: 4 pages, submitted to Phys.Rev.

The metal-insulator transition in Si:X: Anomalous response to a magnetic field

The zero-temperature magnetoconductivity of just-metallic Si:P scales with magnetic field, H, and dopant concentration, n, lying on a single universal curve. We note that Si:P, Si:B, and Si:As all have unusually large magnetic field crossover exponents near 2, and suggest that this anomalously weak response to a magnetic field is a common feature of uncompensated doped semiconductors.Comment: 4 pages (including figures

Hopping Conduction in Uniaxially Stressed Si:B near the Insulator-Metal Transition

Using uniaxial stress to tune the critical density near that of the sample, we have studied in detail the low-temperature conductivity of p-type Si:B in the insulating phase very near the metal-insulator transition. For all values of temperature and stress, the conductivity collapses onto a single universal scaling curve. For large values of the argument, the scaling function is well fit by the exponentially activated form associated with variable range hopping when electron-electron interactions cause a soft Coulomb gap in the density of states at the Fermi energy. The temperature dependence of the prefactor, corresponding to the T-dependence of the critical curve, has been determined reliably for this system, and is proportional to the square-root of T. We show explicitly that nevlecting the prefactor leads to substantial errors in the determination of the scaling parameters and the critical exponents derived from them. The conductivity is not consistent with Mott variable-range hopping in the critical region nor does it obey this form for any range of the parameters. Instead, for smaller argument of the scaling function, the conductivity of Si:B is well fit by an exponential form with exponent 0.31 related to the critical exponents of the system at the metal- insulator transition.Comment: 13 pages, 6 figure

Conductivity of Metallic Si:B near the Metal-Insulator Transition: Comparison between Unstressed and Uniaxially Stressed Samples

The low-temperature dc conductivities of barely metallic samples of p-type Si:B are compared for a series of samples with different dopant concentrations, n, in the absence of stress (cubic symmetry), and for a single sample driven from the metallic into the insulating phase by uniaxial compression, S. For all values of temperature and stress, the conductivity of the stressed sample collapses onto a single universal scaling curve. The scaling fit indicates that the conductivity of si:B is proportional to the square-root of T in the critical range. Our data yield a critical conductivity exponent of 1.6, considerably larger than the value reported in earlier experiments where the transition was crossed by varying the dopant concentration. The larger exponent is based on data in a narrow range of stress near the critical value within which scaling holds. We show explicitly that the temperature dependences of the conductivity of stressed and unstressed Si:B are different, suggesting that a direct comparison of the critical behavior and critical exponents for stress- tuned and concentration-tuned transitions may not be warranted