The effect of geometrical confinement and chirality on domain wall pinning behavior in planar nanowires

We investigate the domain wall pinning behavior in Permalloynanowires using experimental measurements and micromagnetic simulations. Planar nanowirestructures were fabricated by electron beam lithography followed by thin-filmdeposition via thermal evaporation. The magnetization switching behavior of individual nanowires was measured using the magneto-optical Kerr effect. For symmetrical pinning structures such as the junction between a wider domain wall injection pad and a narrower nanowire, the domain wall depinning field increases as the wire width decreases, with the depinning field increasing rapidly for wires widths below 400 nm. For domain wall pinning at asymmetrical structures such as a notch, the magnitude of the depinning field appears relatively insensitive to notch geometry for triangular and rectangular notch structures, compared to the influence of the wire width. The domain wall depinning field from triangular notches increases as notch depth increases although this increase levels off at notch depths greater than approximately 60% wire width. The nature of domain wall pinning at asymmetrical notch structures is also sensitive to domain wallchirality

Controlling Domain Wall Pinning in Planar Nanowires by Selecting Domain Wall Type and its Application in a Memory Concept

Here, we report on the control of domain wall pinning at notch features patterned in Permalloy planar nanowires by selecting the micromagnetic configuration of the domain wall using a transverse magnetic field. The domain wall behavior was investigated both experimentally using focused magneto-optic Kerr effect measurements of lithographically patterned nanowires and with micromagnetic simulations. The pinning behavior observed is utilized in a concept for multibit memory cells applicable as the free layer in magnetic random access memory where the domain structure is defined by the location of domain walls that either pin or passby pinning structures depending upon the domain wall configuration selected

Vortex-assisted domain wall depinning and propagation in notched nanowires

Various notches are often introduced in spintronics to trap a domain wall (DW). Common wisdom would expect notches to strengthen DW pinning and to hinder DW motion. Interestingly, our simulations show that notches help electric current to depin a DW with the assistance of vortex generation. The DW displacement is insensitive to notch geometry and current density. This phenomenon is explained by the Thiele equation. Moreover, a current density below the intrinsic threshold value, which is the minimum current to sustain continuous DW motion in a uniform nanowire, can induce a continuous DW propagation along a wire with a series of notches

The Development and Validation of a New Machiavellianism Scale

A new measure of Machiavellianism, the Machiavellian Personality Scale (MPS), was developed and validated over two studies. Machiavellianism is conceptualized as one’s propensity to distrust others, engage in amoral manipulation, seek control over others, and seek status for oneself. Study 1 developed and tested the factor structure of the scale, whereas Study 2 provided evidence for the convergent, divergent, and criterion-related validity of the MPS. The results of these studies supported the a priori factor structure of the MPS and indicated that it is a valid predictor of such outcomes as job satisfaction, task performance, and counterproductive work behaviors