Porous nanostructured InP: technology, properties, application

We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP epilayers grown on them were studied. These InP epilayers grown on the porous and standard InP substrates were used to make microwave diodes. We showed the advantages of the diodes made on the porous substrates (over those made on the standard ones) caused by higher structural perfection of the InP epilayers grown on the porous substrates

New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis

A novel technological approach to fabrication of n-InP autoepitaxial films LPE-grown on porous n⁺-InP substrates, as well as ohmic and barrier contacts to them using (quasi)amorphous TiBx interstitial phases, is proposed. We demonstrate the advantages of TiBx−n-n⁺-n⁺⁺-InP Schottky-barrier diodes made on porous substrates over those made on the standard rigid substrates, as well as the possibility to make Gunn diodes (intended for the 120−150 GHz frequency range) on the InP epitaxial structures grown on porous substrates

Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP

Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n⁺-InP and Au–Ti–Ge–Pd-n⁺-InP prepared using the method of successive thermal evaporation of metals in oil-free vacuum in one process cycle onto the n⁺-n-n⁺⁺-n⁺⁺⁺-InP epitaxial structure heated to 300 °C. It has been theoretically and experimentally shown that within the temperature range 250…380 K the current transport mechanism in the ohmic contacts Au–Ti–Pd–n⁺-InP is thermal-field one, and in the ohmic contacts Au–Ti–Ge–Pd-n⁺-InP it is caused by conductivity along metal shunts linked with dislocations. According to the X-ray diffraction data, the density of these dislocations in the near-contact InP area is ~10⁹ cm⁻²