1 research outputs found
Solid-State Synapse Based on Magnetoelectrically Coupled Memristor
Brain-inspired computing
architectures attempt to emulate the computations performed in the
neurons and the synapses in the human brain. Memristors with continuously
tunable resistances are ideal building blocks for artificial synapses.
Through investigating the memristor behaviors in a La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub>/BaTiO<sub>3</sub>/La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub> multiferroic tunnel junction, it
was found that the ferroelectric domain dynamics characteristics are
influenced by the relative magnetization alignment of the electrodes,
and the interfacial spin polarization is manipulated continuously
by ferroelectric domain reversal, enriching our understanding of the
magnetoelectric coupling fundamentally. This creates a functionality
that not only the resistance of the memristor but also the synaptic
plasticity form can be further manipulated, as demonstrated by the
spike-timing-dependent plasticity investigations. Density functional
theory calculations are carried out to describe the obtained magnetoelectric
coupling, which is probably related to the Mn–Ti intermixing
at the interfaces. The multiple and controllable plasticity characteristic
in a single artificial synapse, to resemble the synaptic morphological
alteration property in a biological synapse, will be conducive to
the development of artificial intelligence