1 research outputs found
Monolithic Integration of InSb Photodetector on Silicon for Mid-Infrared Silicon Photonics
The
InSb photodetector on a Si substrate acts as a signal receiver
for the mid-infrared silicon photonics application to overcome the
limitation of group IV semiconductors. In this paper, we demonstrated
an InSb p–i–n photodetector with an InAlSb barrier layer
grown on (100) silicon substrates via a GaAs/Ge buffer by molecular
beam epitaxy. The lattice mismatch between InSb and GaAs was accommodated
by an interfacial misfit array. The 50% cutoff detectable wavelength
of this detector increased from 5.7 μm at 80 K to 6.3 μm
at 200 K. An 80 K detectivity of 8.8 × 10<sup>9</sup> cmHz<sup>1/2</sup> W<sup>–1</sup> at 5.3 μm was achieved with
a quantum efficiency of 16.3%. The dark current generating mechanism
of this detector is both generation–recombination and surface
leakage above 140 K, while it is only surface leakage from 120 to
40 K