Novel integrated CMOS pixel structures for vertex detectors

Novel CMOS active pixel structures for vertex detector applications have been designed and tested. The overriding goal of this work is to increase the signal to noise ratio of the sensors and readout circuits. A large-area native epitaxial silicon photogate was designed with the aim of increasing the charge collected per struck pixel and to reduce charge diffusion to neighboring pixels. The photogate then transfers the charge to a low capacitance readout node to maintain a high charge to voltage conversion gain. Two techniques for noise reduction are also presented. The first is a per-pixel kT/C noise reduction circuit that produces results similar to traditional correlated double sampling (CDS). It has the advantage of requiring only one read, as compared to two for CDS, and no external storage or subtraction is needed. The technique reduced input-referred temporal noise by a factor of 2.5, to 12.8 e{sup -}. Finally, a column-level active reset technique is explored that suppresses kT/C noise during pixel reset. In tests, noise was reduced by a factor of 7.6 times, to an estimated 5.1 e{sup -} input-referred noise. The technique also dramatically reduces fixed pattern (pedestal) noise, by up to a factor of 21 in our tests. The latter feature may possibly reduce pixel-by-pixel pedestal differences to levels low enough to permit sparse data scan without per-pixel offset corrections

Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon sensitive region

Integrated CMOS Active Pixel Sensor (APS) arrays have been fabricated and tested using X-ray and electron sources. The 128 by 128 pixel arrays, designed in a standard 0.25 micron process, use a {approx}10 micron epitaxial silicon layer as a deep detection region. The epitaxial layer has a much greater thickness than the surface features used by standard CMOS APS, leading to stronger signals and potentially better signal-to-noise ratio (SNR). On the other hand, minority carriers confined within the epitaxial region may diffuse to neighboring pixels, blur images and reduce peak signal intensity. But for low-rate, sparse-event images, centroid analysis of this diffusion may be used to increase position resolution. Careful trade-offs involving pixel size and sense-node area verses capacitance must be made to optimize overall performance. The prototype sensor arrays, therefore, include a range of different pixel designs, including different APS circuits and a range of different epitaxial layer contact structures. The fabricated arrays were tested with 1.5 GeV electrons and Fe-55 X-ray sources, yielding a measured noise of 13 electrons RMS and an SNR for single Fe-55 X-rays of greater than 38

Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon sensitive region

Integrated CMOS Active Pixel Sensor (APS) arrays have been fabricated and tested using X-ray and electron sources. The 128 by 128 pixel arrays, designed in a standard 0.25 micron process, use a {approx}10 micron epitaxial silicon layer as a deep detection region. The epitaxial layer has a much greater thickness than the surface features used by standard CMOS APS, leading to stronger signals and potentially better signal-to-noise ratio (SNR). On the other hand, minority carriers confined within the epitaxial region may diffuse to neighboring pixels, blur images and reduce peak signal intensity. But for low-rate, sparse-event images, centroid analysis of this diffusion may be used to increase position resolution. Careful trade-offs involving pixel size and sense-node area verses capacitance must be made to optimize overall performance. The prototype sensor arrays, therefore, include a range of different pixel designs, including different APS circuits and a range of different epitaxial layer contact structures. The fabricated arrays were tested with 1.5 GeV electrons and Fe-55 X-ray sources, yielding a measured noise of 13 electrons RMS and an SNR for single Fe-55 X-rays of greater than 38

A GEM-TPC prototype with low-Noise highly integrated front-end electronics for linear collider studies

Connected to the linear collider project, studies on the readout of time projection chambers (TPCs) based on the gas electron multiplier (GEM) are ongoing. Higher granularity and intrinsically suppressed ion feedback are the major advantages of this technology. After a short discussion of these issues, we present the design of a small and very flexible TPC prototype, whose cylindrical drift volume can be equipped with endcaps of different gas detector types. An endcap with multi-GEM readout is currently set up and successfully operated with a low-noise highly integrated front-end electronics. We discuss results of measurements with this system in high intensity particle beams at CERN, where 99.3 plus or minus 0.2% single-pad-row efficiency could be achieved at an effective gain of 2.5 multiplied by 10**3 only, and spatial resolutions down to 63 plus or minus 3 mum could be demonstrated. Finally, these results are extrapolated to the high magnetic field in a linear collider TPC. 5 Refs

A CMOS Active Pixel Sensor for Charged Particle Detection

Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 {micro}m. Each array is divided into sub-arrays in which different sensor structures (4 in the first version and 16 in the second) and/or readout circuits are employed. Measurements of several of these structures under Fe{sup 55} exposure are reported. The sensors have also been irradiated by 55 MeV protons to test for radiation damage. The radiation increased the noise and reduced the signal. The noise can be explained by shot noise from the increased leakage current and the reduction in signal is due to charge being trapped in the epi layer. Nevertheless, the radiation effect is small for the expected exposures at RHIC and RHIC II. Finally, we describe our concept for mechanically supporting a thin silicon wafer in an actual detector

Using an Active Pixel Sensor In A Vertex Detector

Research has shown that Active Pixel CMOS sensors can detect charged particles. We have been studying whether this process can be used in a collider environment. In particular, we studied the effect of radiation with 55 MeV protons. These results show that a fluence of about 2 x 10{sup 12} protons/cm{sup 2} reduces the signal by a factor of two while the noise increases by 25%. A measurement 6 months after exposure shows that the silicon lattice naturally repairs itself. Heating the silicon to 100 C reduced the shot noise and increased the collected charge. CMOS sensors have a reduced signal to noise ratio per pixel because charge diffuses to neighboring pixels. We have constructed a photogate to see if this structure can collect more charge per pixel. Results show that a photogate does collect charge in fewer pixels, but it takes about 15 ms to collect all of the electrons produced by a pulse of light