448 research outputs found
Corner overgrowth: Bending a high mobility two-dimensional electron system by 90 degrees
Introducing an epitaxial growth technique called corner overgrowth, we
fabricate a quantum confinement structure consisting of a high-mobility
GaAs/AlGaAs heterojunction overgrown on top of an ex-situ cleaved substrate
corner. The resulting corner-junction quantum-well heterostructure effectively
bends a two-dimensional electron system (2DES) at an atomically sharp angle. The high-mobility 2DES demonstrates fractional quantum Hall effect
on both facets. Lossless edge-channel conduction over the corner confirms a
continuum of 2D electrons across the junction, consistent with
Schroedinger-Poisson calculations of the electron distribution. This growth
technique differs distinctly from cleaved-edge overgrowth and enables a
complementary class of new embedded quantum heterostructures.Comment: 3 pages, 4 figures, latest version accepted to AP
OvA-INN: Continual Learning with Invertible Neural Networks
In the field of Continual Learning, the objective is to learn several tasks
one after the other without access to the data from previous tasks. Several
solutions have been proposed to tackle this problem but they usually assume
that the user knows which of the tasks to perform at test time on a particular
sample, or rely on small samples from previous data and most of them suffer of
a substantial drop in accuracy when updated with batches of only one class at a
time. In this article, we propose a new method, OvA-INN, which is able to learn
one class at a time and without storing any of the previous data. To achieve
this, for each class, we train a specific Invertible Neural Network to extract
the relevant features to compute the likelihood on this class. At test time, we
can predict the class of a sample by identifying the network which predicted
the highest likelihood. With this method, we show that we can take advantage of
pretrained models by stacking an Invertible Network on top of a feature
extractor. This way, we are able to outperform state-of-the-art approaches that
rely on features learning for the Continual Learning of MNIST and CIFAR-100
datasets. In our experiments, we reach 72% accuracy on CIFAR-100 after training
our model one class at a time.Comment: to be published in IJCNN 202
Kondo effect in a few-electron quantum ring
A small quantum ring with less than 10 electrons was studied by transport
spectroscopy. For strong coupling to the leads a Kondo effect is observed and
used to characterize the spin structure of the system in a wide range of
magnetic fields. At small magnetic fields Aharonov-Bohm oscillations influenced
by Coulomb interaction appear. They exhibit phase jumps by at the
Coulomb-blockade resonances. Inside Coulomb-blockade valleys the Aharonov-Bohm
oscillations can also be studied due to the finite conductance caused by the
Kondo effect. Astonishingly, the maxima of the oscillations show linear shifts
with magnetic field and gate voltage.Comment: 4 pages, 4 figure
Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots
We have combined direct nanofabrication by local anodic oxidation with
conventional electron-beam lithography to produce a parallel double quantum dot
based on a GaAs/AlGaAs heterostructure. The combination of both nanolithography
methods allows to fabricate robust in-plane gates and Cr/Au top gate electrodes
on the same device for optimal controllability. This is illustrated by the
tunability of the interdot coupling in our device. We describe our fabrication
and alignment scheme in detail and demonstrate the tunability in
low-temperature transport measurements.Comment: 4 pages, 3 figure
Optically Probing Spin and Charge Interactions in an Tunable Artificial Molecule
We optically probe and electrically control a single artificial molecule
containing a well defined number of electrons. Charge and spin dependent
inter-dot quantum couplings are probed optically by adding a single
electron-hole pair and detecting the emission from negatively charged exciton
states. Coulomb and Pauli blockade effects are directly observed and
hybridization and electrostatic charging energies are independently measured.
The inter-dot quantum coupling is confirmed to be mediated predominantly by
electron tunneling. Our results are in excellent accord with calculations that
provide a complete picture of negative excitons and few electron states in
quantum dot molecules.Comment: shortened version: 6 pages, 3 figures, 1 table, to appear in Phys.
Rev. Let
Quantum Hall Effect in a Two-Dimensional Electron System Bent by 90 Degrees
Using a new MBE growth technique, we fabricate a two-dimensional electron
system which is bent around an atomically sharp 90 degree corner. In the
quantum Hall regime under tilted magnetic fields, we can measure equilibration
between both co- and counter-propagating edge channels of arbitrary filling
factor ratio. We present here 4-point magnetotransport characterization of the
corner junction with filling factor combinations which can all be explained
using the standard Landauer-Buttiker edge channel picture. The success of this
description confirms the realization of a new type of quantum Hall edge
geometry.Comment: 4 pages, figures included Typographical errors corrected, reference
adde
New Anisotropic Behavior of Quantum Hall Resistance in (110) GaAs Heterostructures at mK Temperatures and Fractional Filling Factors
Transport experiments in high mobility (110) GaAs heterostructures have been
performed at very low temperatures 8 mK. At higher Landau-Levels we observe a
transport anisotropy that bears some similarity with what is already seen at
half-odd-integer filling on (001) oriented substrates. In addition we report
the first observation of transport anisotropies within the lowest Landau-Level.
This remarkable new anisotropy is independent of the current direction and
depends on the polarity of the magnetic field.Comment: 3 Pages, 4 figures, Latex, uses elsart.cls and physart.cls, to be
published in Physica E Added reference, made contact configuration more clea
Aluminum arsenide cleaved-edge overgrown quantum wires
We report conductance measurements in quantum wires made of aluminum
arsenide, a heavy-mass, multi-valley one-dimensional (1D) system. Zero-bias
conductance steps are observed as the electron density in the wire is lowered,
with additional steps observable upon applying a finite dc bias. We attribute
these steps to depopulation of successive 1D subbands. The quantum conductance
is substantially reduced with respect to the anticipated value for a spin- and
valley-degenerate 1D system. This reduction is consistent with
disorder-induced, intra-wire backscattering which suppresses the transmission
of 1D modes. Calculations are presented to demonstrate the role of strain in
the 1D states of this cleaved-edge structure.Comment: Submitted to Applied Physics Letter
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