5,549 research outputs found
Search for Ferromagnetism in doped semiconductors in the absence of transition metal ions
In contrast to semiconductors doped with transition metal magnetic elements,
which become ferromagnetic at temperatures below ~ 100K, semiconductors doped
with non-magnetic ions (e.g. silicon doped with phosphorous) have not shown
evidence of ferromagnetism down to millikelvin temperatures. This is despite
the fact that for low densities the system is expected to be well modeled by
the Hubbard model, which is predicted to have a ferromagnetic ground state at
T=0 on 2- or 3-dimensional bipartite lattices in the limit of strong
correlation near half-filling. We examine the impurity band formed by
hydrogenic centers in semiconductors at low densities, and show that it is
described by a generalized Hubbard model which has, in addition to strong
electron-electron interaction and disorder, an intrinsic electron-hole
asymmetry. With the help of mean field methods as well as exact diagonalization
of clusters around half filling, we can establish the existence of a
ferromagnetic ground state, at least on the nanoscale, which is more robust
than that found in the standard Hubbard model. This ferromagnetism is most
clearly seen in a regime inaccessible to bulk systems, but attainable in
quantum dots and 2D heterostructures. We present extensive numerical results
for small systems that demonstrate the occurrence of high-spin ground states in
both periodic and positionally disordered 2D systems. We consider how
properties of real doped semiconductors, such as positional disorder and
electron-hole asymmetry, affect the ground state spin of small 2D systems. We
also discuss the relationship between this work and diluted magnetic
semiconductors, such as Ga_(1-x)Mn_(x)As, which though disordered, show
ferromagnetism at relatively high temperatures.Comment: 47 page
Time Series Analysis of Real Effective Exchange Rate
This paper analyses the trendand seasonal variation of real effective exchange rate (REER) with an objectiveof building a model for predicting the exchangerate. Classical decomposition of the timeseries data of monthly export and trade basedREER from January 2011 to August 2015 has been performed. The trend and seasonalcomponents have been studied. The results show that the trend and seasonal effectare attributed only to chance (random) andnot by a systematic factor like a trend or a seasonal change.Keywords: Exchangerate, Trend Analysis, Seasonal variation, Classical Decomposition
Hopping Conduction in Uniaxially Stressed Si:B near the Insulator-Metal Transition
Using uniaxial stress to tune the critical density near that of the sample,
we have studied in detail the low-temperature conductivity of p-type Si:B in
the insulating phase very near the metal-insulator transition. For all values
of temperature and stress, the conductivity collapses onto a single universal
scaling curve. For large values of the argument, the scaling function is well
fit by the exponentially activated form associated with variable range hopping
when electron-electron interactions cause a soft Coulomb gap in the density of
states at the Fermi energy. The temperature dependence of the prefactor,
corresponding to the T-dependence of the critical curve, has been determined
reliably for this system, and is proportional to the square-root of T. We show
explicitly that nevlecting the prefactor leads to substantial errors in the
determination of the scaling parameters and the critical exponents derived from
them. The conductivity is not consistent with Mott variable-range hopping in
the critical region nor does it obey this form for any range of the parameters.
Instead, for smaller argument of the scaling function, the conductivity of Si:B
is well fit by an exponential form with exponent 0.31 related to the critical
exponents of the system at the metal- insulator transition.Comment: 13 pages, 6 figure
Phase Transition in the Three-Dimensional Ising Spin Glass
We have studied the three-dimensional Ising spin glass with a
distribution by Monte Carlo simulations. Using larger sizes and much better
statistics than in earlier work, a finite size scaling analysis shows quite
strong evidence for a finite transition temperature, , with ordering below
. Our estimate of the transition temperature is rather lower than in
earlier work, and the value of the correlation length exponent, , is
somewhat higher. Because there may be (unknown) corrections to finite size
scaling, we do not completely rule out the possibility that or that
is finite but with no order below . However, from our data, these
possibilities seem less likely.Comment: Postscript file compressed using uufiles. The postscript file is also
available by anonymous ftp at ftp://chopin.ucsc.edu/pub/sg3d.p
Infinite disorder scaling of random quantum magnets in three and higher dimensions
Using a very efficient numerical algorithm of the strong disorder
renormalization group method we have extended the investigations about the
critical behavior of the random transverse-field Ising model in three and four
dimensions, as well as for Erd\H os-R\'enyi random graphs, which represent
infinite dimensional lattices. In all studied cases an infinite disorder
quantum critical point is identified, which ensures that the applied method is
asymptotically correct and the calculated critical exponents tend to the exact
values for large scales. We have found that the critical exponents are
independent of the form of (ferromagnetic) disorder and they vary smoothly with
the dimensionality.Comment: 6 pages, 5 figure
Conductivity of Metallic Si:B near the Metal-Insulator Transition: Comparison between Unstressed and Uniaxially Stressed Samples
The low-temperature dc conductivities of barely metallic samples of p-type
Si:B are compared for a series of samples with different dopant concentrations,
n, in the absence of stress (cubic symmetry), and for a single sample driven
from the metallic into the insulating phase by uniaxial compression, S. For all
values of temperature and stress, the conductivity of the stressed sample
collapses onto a single universal scaling curve. The scaling fit indicates that
the conductivity of si:B is proportional to the square-root of T in the
critical range. Our data yield a critical conductivity exponent of 1.6,
considerably larger than the value reported in earlier experiments where the
transition was crossed by varying the dopant concentration. The larger exponent
is based on data in a narrow range of stress near the critical value within
which scaling holds. We show explicitly that the temperature dependences of the
conductivity of stressed and unstressed Si:B are different, suggesting that a
direct comparison of the critical behavior and critical exponents for stress-
tuned and concentration-tuned transitions may not be warranted
Absence of Conventional Spin-Glass Transition in the Ising Dipolar System LiHo_xY_{1-x}F_4
The magnetic properties of single crystals of LiHo_xY_{1-x}F_4 with x=16.5%
and x=4.5% were recorded down to 35 mK using a micro-SQUID magnetometer. While
this system is considered as the archetypal quantum spin glass, the detailed
analysis of our magnetization data indicates the absence of a phase transition,
not only in a transverse applied magnetic field, but also without field. A
zero-Kelvin phase transition is also unlikely, as the magnetization seems to
follow a non-critical exponential dependence on the temperature. Our analysis
thus unmasks the true, short-ranged nature of the magnetic properties of the
LiHo_xY_{1-x}F_4 system, validating recent theoretical investigations
suggesting the lack of phase transition in this system.Comment: 5 pages, 4 figure
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