Characterization of bulk MgB2 synthesized by infiltration and growth

Superconducting MgB2 has been synthesized successfully by a modified infiltration and growth (IG) technique. The ambient pressure technique is relatively simple and scalable to complex shaped bulks. The extent of MgB 2 phase formation has been found to be influenced strongly by the IG process time and/or temperature, and this is found to reflect in the X-ray diffraction patterns, magnetization measurements, and microhardness. Scanning electron microscopy images show a bimodal particle size distribution with 20-50 nm sized fine precipitates in the inter particle region. A critical current density of 400 kA cm-2 was measured at 5 K.KACST-Cambridge Research Centre, Cambridge, U.K

Synthesis of dense bulk MgB2 by an infiltration and growth process

We report the processing of dense, superconducting MgB2 (2.4 g cm-3) by an infiltration and growth technique. The process, which involves infiltration of liquid magnesium at 750 C into a pre-defined boron precursor pellet, is relatively simple, results in the formation of a hard, dense structure and has the potential to fabricate large bulk samples of complex geometries. X-ray diffraction has been used to confirm the presence of the MgB2 primary phase with only residual magnesium content in the fully processed samples. The samples exhibit sharp superconducting transitions at 38.4 K and have critical current densities of up to 260 kA cm-2 in self-field at 5 K. Modest measured values of Hc2(0) of 17 T suggest that superconductivity in bulk MgB2 fabricated by this technique is in the clean pairing limit

Microstructural evolution in infiltration-growth processed MgB2 bulk superconductors

© 2017 The Authors. The study reports phase and microstructural evolution in MgB2 bulk superconductors fabricated by an Infiltration and Growth (IG) process. Three distinct stages: (1) intermediate boride formation (2) bulk liquid Mg infiltration and (3) MgB2 layer formation, were identified in IG process after detailed examination of series of samples prepared with varied heating conditions. The intermediate phase Mg2B25, isomorphous to β-Boron, was detected prior to MgB2 phase formation in stage (1). Due to volume expansion involved in stage 1, cracks formed in the β-Boron particles and propagated radially inwards during stage 3. The growing MgB2 particles sintered simultaneously with formation of grain boundaries during the process, as evidenced by the measured hardness and critical current density in these samples. From our observations we estimate the total time needed for complete transformation to MgB2.Authors acknowledge financial support from KACST-Cambridge Joint Centre of Excellence in Advanced Materials and Manufacturing (CAMM) based at the University of Cambridge, UK. Partial financial support from Engineering and Physical Sciences Research Council, UK (Grant: EP/K031422/1) is gratefully acknowledged.KACST‐Cambridge Joint Centre of Excellence in Advanced Materials and Manufacturing; Engineering and Physical Sciences Research Council. Grant Number: EP/K031422/

Microstructural evolution in infiltration-growth processed MgB₂ bulk superconductors

The study reports phase and microstructural evolution in MgB2 bulk superconductors fabricated by an infiltration and growth (IG) process. Three distinct stages, (1) intermediate boride formation, (2) bulk liquid Mg infiltration, and (3) MgB2 layer formation, were identified in IG process after detailed examination of series of samples prepared with varied heating conditions. The intermediate phase Mg2B25, isomorphous to β-boron, was detected prior to MgB2 phase formation in stage (1). Due to volume expansion involved in stage 1, cracks formed in the β-boron particles and propagated radially inwards during stage 3. The growing MgB2 particles sintered simultaneously with formation of grain boundaries during the process, as evidenced by the measured hardness and critical current density in these samples. From our observations, we estimate the total time needed for complete transformation to MgB2.Authors acknowledge financial support from KACST-Cambridge Joint Centre of Excellence in Advanced Materials and Manufacturing (CAMM) based at the University of Cambridge, UK. Partial financial support from Engineering and Physical Sciences Research Council, UK (Grant: EP/K031422/1) is gratefully acknowledged

Numerical modelling and comparison of MgB<inf>2</inf> bulks fabricated by HIP and infiltration growth

MgB_2 in bulk form shows great promise as trapped field magnets (TFMs) as an alternative to bulk (RE)BCO materials to replace permanent magnets in applications such as rotating machines, magnetic bearings and magnetic separation, and the relative ease of fabrication of MgB_2 materials has enabled a number of different processing techniques to be developed. In this paper, a comparison is made between bulk MgB_2 samples fabricated by the hot isostatic pressing (HIP), with and without Ti-doping, and infiltration growth (IG) methods and the highest trapped field in an IG-processed bulk MgB_2 sample, B_z = 2.12 at 5 K and 1.66 T at 15 K, is reported. Since bulk MgB_2 has a more homogeneous J_c distribution than (RE)BCO bulks, studies on such systems are made somewhat easier because simplified assumptions regarding the geometry and J_c distribution can be made, and a numerical simulation technique based on the 2D axisymmetric H-formulation is introduced to model the complete process of field cooling (FC) magnetization. As input data for the model, the measured J_c(B,T) characteristics of a single, small specimen taken from each bulk sample are used, in addition to measured specific heat and thermal conductivity data for the materials. The results of the simulation reproduce the experimental results extremely well: (1) indicating the samples have excellent homogeneity, and (2) validating the numerical model as a fast, accurate and powerful tool to investigate the trapped field profile of bulk MgB_2 discs of any size accurately, under any specific operating conditions. Finally, the paper is concluded with a numerical analysis of the influence of the dimensions of the bulk sample on the trapped field.JZ would like to acknowledge the support of Churchill College, Cambridge, the China Scholarship Council and the Cambridge Commonwealth, European and International Trust. MA would like to acknowledge the support of a Royal Academy of Engineering Research Fellowship. HF would like to acknowledge support in part by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology, Japan. This research was also supported in part by a Royal Society International Exchanges Scheme grant, IE131084. J-FF would like to thank the Ministry of Higher Education through the Research Council of the University of Liege (Action de Recherches Concertées grant, ARC 11/16-03).This is the author accepted manuscript. The final version is available from IOP via http://dx.doi.org/10.1088/0953-2048/28/7/07500

High Trapped Fields in C-doped MgB2 Bulk Superconductors Fabricated by Infiltration and Growth Process.

The grain boundaries in superconducting MgB2 are known to form effective magnetic flux pinning sites and, consequently, bulk MgB2 containing a fine-grain microstructure fabricated from nanoscale Mg and B precursor powders exhibits good magnetic field-trapping performance below 20 K. We report here that the trapped field of MgB2 bulk superconductors fabricated by an infiltration and growth process to yield a dense, pore-free microstructure, can be enhanced significantly by carbon-doping, which increases intra-band scattering within the superconducting grains. A maximum trapped field of 4.15 T has been measured at 7.5 K at the centre of a five-sample stack of Mg(B1-xiCxi)2 bulk superconductors processed by infiltration and growth, which not only represents a ~40% increase in trapped field observed compared to undoped bulk MgB2, but also is the highest trapped field reported to date in MgB2 samples processed under ambient pressure. The trapped field is observed to decay at a rate of <2%/day at 10 K, which suggests that bulk MgB2 superconductors fabricated using the infiltration and growth technique can be used potentially to generate stable, high magnetic fields for a variety of engineering applications

Characterization of bulk MgB<inf>2</inf> synthesized by infiltration and growth

Superconducting MgB2 has been synthesized successfully by a modified infiltration and growth (IG) technique. The ambient pressure technique is relatively simple and scalable to complex shaped bulks. The extent of MgB 2 phase formation has been found to be influenced strongly by the IG process time and/or temperature, and this is found to reflect in the X-ray diffraction patterns, magnetization measurements, and microhardness. Scanning electron microscopy images show a bimodal particle size distribution with 20-50 nm sized fine precipitates in the inter particle region. A critical current density of 400 kA cm-2 was measured at 5 K

Synthesis of dense bulk MgB<inf>2</inf> by an infiltration and growth process

We report the processing of dense, superconducting MgB2 (2.4 g cm-3) by an infiltration and growth technique. The process, which involves infiltration of liquid magnesium at 750 C into a pre-defined boron precursor pellet, is relatively simple, results in the formation of a hard, dense structure and has the potential to fabricate large bulk samples of complex geometries. X-ray diffraction has been used to confirm the presence of the MgB2 primary phase with only residual magnesium content in the fully processed samples. The samples exhibit sharp superconducting transitions at 38.4 K and have critical current densities of up to 260 kA cm-2 in self-field at 5 K. Modest measured values of Hc2(0) of 17 T suggest that superconductivity in bulk MgB2 fabricated by this technique is in the clean pairing limit

High Trapped Fields in C-doped MgB2 Bulk Superconductors Fabricated by Infiltration and Growth Process.

The grain boundaries in superconducting MgB2 are known to form effective magnetic flux pinning sites and, consequently, bulk MgB2 containing a fine-grain microstructure fabricated from nanoscale Mg and B precursor powders exhibits good magnetic field-trapping performance below 20 K. We report here that the trapped field of MgB2 bulk superconductors fabricated by an infiltration and growth process to yield a dense, pore-free microstructure, can be enhanced significantly by carbon-doping, which increases intra-band scattering within the superconducting grains. A maximum trapped field of 4.15 T has been measured at 7.5 K at the centre of a five-sample stack of Mg(B1-xiCxi)2 bulk superconductors processed by infiltration and growth, which not only represents a ~40% increase in trapped field observed compared to undoped bulk MgB2, but also is the highest trapped field reported to date in MgB2 samples processed under ambient pressure. The trapped field is observed to decay at a rate of <2%/day at 10 K, which suggests that bulk MgB2 superconductors fabricated using the infiltration and growth technique can be used potentially to generate stable, high magnetic fields for a variety of engineering applications

A trapped magnetic field of 3T in homogeneous, bulk MgB2 superconductors fabricated by a Modified Precursor Infiltration and Growth (MPIG) process

The wetting of boron with liquid magnesium is a critical factor in the synthesis of MgB2 bulk superconductors by the infiltration and growth (IG) process. Poor wetting characteristics can therefore result potentially in non-uniform infiltration, formation of defects in the final sample structure and poor structural homogeneity throughout the bulk material. Here we report the fabrication of near-net-shaped MgB2 bulk superconductors by a modified precursor infiltration and growth (MPIG) technique. A homogeneous bulk microstructure has subsequently been achieved via the uniform infiltration of Mg liquid by enriching pre-reacted MgB2 powder within the green precursor pellet as a wetting enhancer, leading to relatively little variation in superconducting properties across the entire bulk sample. Almost identical values of trapped magnetic field of 2.12 T have been measured at 5 K at both the top and bottom surfaces of a sample fabricated by the MPIG process, confirming the uniformity of the bulk microstructure. A maximum trapped field of 3 T has been measured at 5 K at the centre of a stack of two bulk MgB2 samples fabricated using this technique. A steady rise in trapped field was observed for this material with decreasing temperature down to 5 K without the occurrence of flux avalanches and with a relatively low field decay rate (1.5%/d). These properties are attributed to the presence of a fine distribution of residual Mg within the bulk microstructure generated by the MPIG processing technique.KACSTCambridge Research Centre, Cambridge, UK and Engineering and Physical Science Research Council, UK. JST-PRESTO and JSPS