Disrupted orbital order and the pseudo-gap in layered 1T-TaS2_2

We present a state-of-the-art density functional theory (DFT) study which models crucial features of the partially disordered orbital order stacking in the prototypical layered transition metal dichalcogenide 1T-TaS2 . Our results not only show that DFT models with realistic assumptions about the orbital order perpendicular to the layers yield band structures which agree remarkably well with experiments. They also demonstrate that DFT correctly predicts the formation of an excitation pseudo-gap which is commonly attributed to Mott-Hubbard type electron-electron correlations. These results highlight the importance of interlayer interactions in layered transition metal dichalcogenides and serve as an intriguing example of how disorder within an electronic crystal can give rise to pseudo-gap features

Torque magnetometry study of magnetically ordered state and spin reorientation in the quasi-one-dimensional S=1/2S=1/2 Heisenberg antiferromagnet CuSb2_2O6_6

We present an experimental study of macroscopic and microscopic magnetic anisotropy of a spin tetramer system \cso using torque magnetometry and ESR spectroscopy. Large rotation of macroscopic magnetic axes with temperature observed from torque magnetometry agrees reasonably well with the rotation of the $\mathbf{g}$ tensor above $T \gtrsim 50$~K. Below 50~K, the $\mathbf{g}$ tensor is temperature independent, while macroscopic magnetic axes continue to rotate. Additionally, the susceptibility anisotropy has a temperature dependence which cannot be reconciled with the isotropic Heisenberg model of interactions between spins. ESR linewidth analysis shows that anisotropic exchange interaction must be present in \csos. These findings strongly support the presence of anisotropic exchange interactions in the Hamiltonian of the studied system. Below $T_N=8$~K, the system enters a long - range antiferromagnetically ordered state with easy axis along the $^*$ direction. Small but significant rotation of magnetic axes is also observed in the antiferromagnetically ordered state suggesting strong spin-lattice coupling in this system.Comment: 10 pages, 10 figure

Interplay of electronic correlations and lattice instabilities in BaVS3

The quasi-one-dimensional metallic system BaVS3 with a metal-insulator transition at T_MI=70 K shows large changes of the optical phonon spectrum, a central peak, and an electronic Raman scattering continuum that evolve in a three-step process. Motivated by the observation of a strongly fluctuating precursor state at high temperatures and orbital ordering and a charge gap at low temperatures we suggest a concerted action of the orbital, electronic, and lattice subsystems dominated by electronic correlations.Comment: 4 pages, 4 figure

Mono- and Bilayer WS2 Light-Emitting Transistors

We have realized ambipolar ionic liquid gated field-effect transistors based on WS2 mono- and bilayers, and investigated their opto-electronic response. A thorough characterization of the transport properties demonstrates the high quality of these devices for both electron and hole accumulation, which enables the quantitative determination of the band gap ({\Delta}1L = 2.14 eV for monolayers and {\Delta}2L = 1.82 eV for bilayers). It also enables the operation of the transistors in the ambipolar injection regime with electrons and holes injected simultaneously at the two opposite contacts of the devices in which we observe light emission from the FET channel. A quantitative analysis of the spectral properties of the emitted light, together with a comparison with the band gap values obtained from transport, show the internal consistency of our results and allow a quantitative estimate of the excitonic binding energies to be made. Our results demonstrate the power of ionic liquid gating in combination with nanoelectronic systems, as well as the compatibility of this technique with optical measurements on semiconducting transition metal dichalcogenides. These findings further open the way to the investigation of the optical properties of these systems in a carrier density range much broader than that explored until now.Comment: 22 pages, 6 figures, Nano Letters (2014

Scanning photocurrent microscopy reveals electron-hole asymmetry in ionic liquid-gated WS2 transistors

We perform scanning photocurrent microscopy on WS2 ionic liquid-gated field effect transistors exhibiting high-quality ambipolar transport. By properly biasing the gate electrode we can invert the sign of the photocurrent showing that the minority photocarriers are either electrons or holes. Both in the electron- and the hole-doping regimes the photocurrent decays exponentially as a function of the distance between the illumination spot and the nearest contact, in agreement with a two-terminal Schottky-barrier device model. This allows us to compare the value and the doping dependence of the diffusion length of the minority electrons and holes on a same sample. Interestingly, the diffusion length of the minority carriers is several times larger in the hole accumulation regime than in the electron accumulation regime, pointing out an electron-hole asymmetry in WS2

Magnetic order and transitions in the spin-web compound Cu3TeO6

The spin-web compound Cu3TeO6, belongs to an intriguing group of materials where magnetism is governed by 3d9 copper Cu2+ ions. This compound has been sparsely experimentally studied and we here present the first investigation of its local magnetic properties using muon-spin relaxation/rotation ({\mu}+SR). Our results show a clear long-range 3D magnetic order below TN as indicated by clear zero-field (ZF) muon-precessions. At TN = 61.7 K a very sharp transition is observed in the weak transverse-field (wTF) as well as ZF data. Contrary to suggestions by susceptibility measurements and inelastic neutron scattering, we find no evidence for either static or dynamic (on the time-scale of {\mu}+SR) spin-correlations above TN

Giant Kohn anomaly and the phase transition in charge density wave ZrTe_3

A strong Kohn anomaly in ZrTe_3 is identified in the mostly transverse acoustic phonon branch along the modulation vector q_P with polarization along the a* direction. This soft mode freezes to zero frequency at the transition temperature T_P and the temperature dependence of the frequency is strongly affected by fluctuation effects. Diffuse x-ray scattering of the incommensurate superstructure shows a power law scaling of the intensity and the correlation length that is compatible with an order parameter of dimension n = 2.Comment: 4 pages, 4 figures. accepted at Phys. Rev. Let

Strong interface-induced spin-orbit coupling in graphene on WS2

Interfacial interactions allow the electronic properties of graphene to be modified, as recently demonstrated by the appearance of satellite Dirac cones in the band structure of graphene on hexagonal boron nitride (hBN) substrates. Ongoing research strives to explore interfacial interactions in a broader class of materials in order to engineer targeted electronic properties. Here we show that at an interface with a tungsten disulfide (WS2) substrate, the strength of the spin-orbit interaction (SOI) in graphene is very strongly enhanced. The induced SOI leads to a pronounced low-temperature weak anti-localization (WAL) effect, from which we determine the spin-relaxation time. We find that spin-relaxation time in graphene is two-to-three orders of magnitude smaller on WS2 than on SiO2 or hBN, and that it is comparable to the intervalley scattering time. To interpret our findings we have performed first-principle electronic structure calculations, which both confirm that carriers in graphene-on-WS2 experience a strong SOI and allow us to extract a spin-dependent low-energy effective Hamiltonian. Our analysis further shows that the use of WS2 substrates opens a possible new route to access topological states of matter in graphene-based systems.Comment: Originally submitted version in compliance with editorial guidelines. Final version with expanded discussion of the relation between theory and experiments to be published in Nature Communication

Magnetic anisotropy of spin tetramer system SeCuO3_3 studied by torque magnetometry and ESR spectroscopy

We present an experimental study of macroscopic and microscopic magnetic anisotropy of a spin tetramer system SeCuO$_3$ using torque magnetometry and ESR spectroscopy. Large rotation of macroscopic magnetic axes with temperature observed from torque magnetometry agrees reasonably well with the rotation of the $\textbf{g}$ tensor above $T \gtrsim 50$~K. Below 50~K, the $\textbf{g}$ tensor is temperature independent, while macroscopic magnetic axes continue to rotate. Additionally, the susceptibility anisotropy has a temperature dependence which cannot be reconciled with the isotropic Heisenberg model of interactions between spins. ESR linewidth analysis shows that anisotropic exchange interaction must be present in SeCuO$_3$. These findings strongly support the presence of anisotropic exchange interactions in the Hamiltonian of the studied system. Below $T_N=8$~K, the system enters a long - range antiferromagnetically ordered state with easy axis along the $^*$ direction. Small but significant rotation of magnetic axes is also observed in the antiferromagnetically ordered state suggesting strong spin-lattice coupling in this system.Comment: 14 pages, 13 figure

Ambipolar Nernst effect in NbSe2_2

The first study of Nernst effect in NbSe$_2$ reveals a large quasi-particle contribution with a magnitude comparable and a sign opposite to the vortex signal. Comparing the effect of the Charge Density Wave(CDW) transition on Hall and Nernst coefficients, we argue that this large Nernst signal originates from the thermally-induced counterflow of electrons and holes and indicates a drastic change in the electron scattering rate in the CDW state. The results provide new input for the debate on the origin of the anomalous Nernst signal in high-T$_c$ cuprates.Comment: 5 pages including 4 figure