137 research outputs found
Crystal growth and quantum oscillations in the topological chiral semimetal CoSi
We survey the electrical transport properties of the single-crystalline,
topological chiral semimetal CoSi which was grown via different methods.
High-quality CoSi single crystals were found in the growth from tellurium
solution. The sample's high carrier mobility enables us to observe, for the
first time, quantum oscillations (QOs) in its thermoelectrical signals. Our
analysis of QOs reveals two spherical Fermi surfaces around the R point in the
Brillouin zone corner. The extracted Berry phases of these electron orbits are
consistent with the -2 chiral charge as reported in DFT calculations. Detailed
analysis on the QOs reveals that the spin-orbit coupling induced band-splitting
is less than 2 meV near the Fermi level, one order of magnitude smaller than
our DFT calculation result. We also report the phonon-drag induced large Nernst
effect in CoSi at intermediate temperatures
Surface electronic structure of a topological Kondo insulator candidate SmB6: insights from high-resolution ARPES
The Kondo insulator SmB6 has long been known to exhibit low temperature (T <
10K) transport anomaly and has recently attracted attention as a new
topological insulator candidate. By combining low-temperature and high
energy-momentum resolution of the laser-based ARPES technique, for the first
time, we probe the surface electronic structure of the anomalous conductivity
regime. We observe that the bulk bands exhibit a Kondo gap of 14 meV and
identify in-gap low-lying states within a 4 meV window of the Fermi level on
the (001)-surface of this material. The low-lying states are found to form
electron-like Fermi surface pockets that enclose the X and the Gamma points of
the surface Brillouin zone. These states disappear as temperature is raised
above 15K in correspondence with the complete disappearance of the 2D
conductivity channels in SmB6. While the topological nature of the in-gap
metallic states cannot be ascertained without spin (spin-texture) measurements
our bulk and surface measurements carried out in the
transport-anomaly-temperature regime (T < 10K) are consistent with the
first-principle predicted Fermi surface behavior of a topological Kondo
insulator phase in this material.Comment: 4 Figures, 6 Page
Oscillatory surface dichroism of an insulating topological insulator Bi2Te2Se
Using circular dichroism-angle resolved photoemission spectroscopy
(CD-ARPES), we report a study of the effect of angular momentum transfer
between polarized photons and topological surface states on the surface of
highly bulk insulating topological insulator Bi2Te2Se. The photoelectron
dichroism is found to be strongly modulated by the frequency of the helical
photons including a dramatic sign-flip. Our results suggest that the observed
dichroism and its sign-flip are consequences of strong coupling between the
photon field and the spin-orbit nature of the Dirac modes on the surface. Our
studies reveal the intrinsic dichroic behavior of topological surface states
and point toward the potential utility of bulk insulating topological
insulators in device applications.Comment: 5 pages, 4 figure
Topological phase diagram and saddle point singularity in a tunable topological crystalline insulator
We report the evolution of the surface electronic structure and surface
material properties of a topological crystalline insulator (TCI) Pb1-xSnxSe as
a function of various material parameters including composition x, temperature
T and crystal structure. Our spectroscopic data demonstrate the electronic
groundstate condition for the saddle point singularity, the tunability of
surface chemical potential, and the surface states' response to circularly
polarized light. Our results show that each material parameter can tune the
system between trivial and topological phase in a distinct way unlike as seen
in Bi2Se3 and related compounds, leading to a rich and unique topological phase
diagram. Our systematic studies of the TCI Pb1-xSnxSe are valuable materials
guide to realize new topological phenomena.Comment: 10 pages, 7 figures. Expanded version of arXiv:1403.156
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