3,076 research outputs found

    Evaluation of advanced combustion concepts for dry NO sub x suppression with coal-derived, gaseous fuels

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    The emissions performance of a rich lean combustor (developed for liquid fuels) was determined for combustion of simulated coal gases ranging in heating value from 167 to 244 Btu/scf (7.0 to 10.3 MJ/NCM). The 244 Btu/scf gas is typical of the product gas from an oxygen blown gasifier, while the 167 Btu/scf gas is similar to that from an air blown gasifier. NOx performance of the rich lean combustor did not meet program goals with the 244 Btu/scf gas because of high thermal NOx, similar to levels expected from conventional lean burning combustors. The NOx emissions are attributed to inadequate fuel air mixing in the rich stage resulting from the design of the large central fuel nozzle delivering 71% of the total gas flow. NOx yield from ammonia injected into the fuel gas decreased rapidly with increasing ammonia level, and is projected to be less than 10% at NH3 levels of 0.5% or higher. NOx generation from NH3 is significant at ammonia concentrations significantly less than 0.5%. These levels may occur depending on fuel gas cleanup system design. CO emissions, combustion efficiency, smoke and other operational performance parameters were satisfactory. A test was completed with a catalytic combustor concept with petroleum distillate fuel. Reactor stage NOx emissions were low (1.4g NOx/kg fuel). CO emissions and combustion efficiency were satisfactory. Airflow split instabilities occurred which eventually led to test termination

    Ultranarrow conducting channels defined in GaAs-AlGaAs by low-energy ion damage

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    We have laterally patterned the narrowest conducting wires of two-dimensional electron gas (2DEG) material reported to date. The depletion induced by low-energy ion etching of GaAs-AlGaAs 2DEG structures was used to define narrow conducting channels. We employed high voltage electron beam lithography to create a range of channel geometries with widths as small as 75 nm. Using ion beam assisted etching by Cl2 gas and Ar ions with energies as low as 150 eV, conducting channels were defined by etching only through the thin GaAs cap layer. This slight etching is sufficient to entirely deplete the underlying material without necessitating exposure of the sidewalls that results in long lateral depletion lengths. At 4.2 K, without illumination, our narrowest wires retain a carrier density and mobility at least as high as that of the bulk 2DEG and exhibit quantized Hall effects. Aharonov–Bohm oscillations are seen in rings defined by this controlled etch-damage patterning. This patterning technique holds promise for creating one-dimensional conducting wires of even smaller sizes

    Conductivity in Jurkat cell suspension after ultrashort electric pulsing

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    Ultrashort electric pulses applied to similar cell lines such as Jurkat and HL-60 cells can produce markedly different results , which have been documented extensively over the last few years. We now report changes in electrical conductivity of Jurkat cells subjected to traditional electroporation pulses (50 ms pulse length) and ultrashort pulses (10 ns pulse length) using time domain dielectric spectroscopy (TDS). A single 10 ns, 150 kV/cm pulse did not noticeably alter suspension conductivity while a 50 ms, 2.12 kV/cm pulse with the same energy caused an appreciable conductivity rise. These results support the hypothesis that electroporation pulses primarily interact with the cell membrane and cause conductivity rises due to ion transport from the cell to the external media, while pulses with nanosecond duration primarily interact with the membranes of intracellular organelles. However, multiple ultrashort pulses have a cumulative effect on the plasma membrane, with five pulses causing a gradual rise in conductivity up to ten minutes post-pulsing

    Nanosecond electric pulses penetrate the nucleus and enhance speckle formation

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    Nanosecond electric pulses generate nanopores in the interior membranes of cells and modulate cellular functions. Here, we used confocal microscopy and flow cytometry to observe Smith antigen antibody (Y12) binding to nuclear speckles, known as small nuclear ribonucleoprotein particles (snRNPs) or intrachromatin granule clusters (IGCs), in Jurkat cells following one or five 10 ns, 150 kV/cm pulses. Using confocal microscopy and flow cytometry, we observed changes in nuclear speckle labeling that suggested a disruption of pre-messenger RNA splicing mechanisms. Pulse exposure increased the nuclear speckled substructures by 2.5-fold above basal levels while the propidium iodide (PI) uptake in pulsed cells was unchanged. The resulting nuclear speckle changes were also cell cycle dependent. These findings suggest that 10 ns pulses directly influenced nuclear processes, such as the changes in the nuclear RNA–protein complexes

    Microfluidic device for drug delivery

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    A microfluidic device is provided for delivering a drug to an individual. The microfluidic device includes a body that defines a reservoir for receiving the drug therein. A valve interconnects the reservoir to an output needle that is insertable into the skin of an individual. A pressure source urges the drug from the reservoir toward the needle. The valve is movable between a closed position preventing the flow of the drug from the reservoir to the output needle and an open position allowing for the flow of the drug from the reservoir to the output needle in response to a predetermined condition in the physiological fluids of the individual

    Electron Beam Ion Source Pre-Injector Diagnostics

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    Ion Beam Machining Of Optoelectronic Components

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    We produce very smooth vertical sidewalls with high anisotropy in III-V semiconductors by ion beam etching. These qualities are used to fabricate mirrors and deflect light in InGaAs and GaAs waveguide structures. Either a maskless technique, using a focussed ion beam (FIB), or a lithographically deposited mask followed by broad-beam etching (CAIBE) are employed to produce such facets. Here, we describe the two examples of application of high-resolution ion beam etching techniques towards miniaturizing optoelectronic devices. We show the conversion of an edge-emitting laser structure into a surface-emitting structure, by cutting 45° reflection mirrors, and the fabrication of a monolithic InP-based wavelength demultiplexer by etching a diffraction grating

    Realistic Non-Linear Model and Field Quality Analysis in Rhic Interaction Regions.

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    The existence of multipole components in the dipole and quadrupole magnets is one of the factors limiting the beam stability in the RHIC operations. So, a realistic non-linear model is crucial for understanding the beam behavior and to achieve the ultimate performance in RHIC. A procedure is developed to build a non-linear model using the available multipole component data obtained from measurements of RHIC magnets. We first discuss the measurements performed at different stages of manufacturing of the magnets in relation to their current state in RHIC. We then describe the procedure to implement these measurement data into tracking models, including the implementation of the multipole feed down effect due to the beam orbit offset from the magnet center. Finally, the field quality analysis in the RHIC interaction regions (IR) is presented

    Micro-Fluidic Device for Drug Delivery

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    A microfluidic device is provided for delivering a drug to an individual. The microfluidic device includes a body that defines a reservoir for receiving the drug therein. A valve interconnects the reservoir to an output needle that is insertable into the skin of an individual. A pressure source urges the drug from the reservoir toward the needle. The valve is movable between a closed position preventing the flow of the drug from the reservoir to the output needle and an open position allowing for the flow of the drug from the reservoir to the output needle in response to a predetermined condition in the physiological fluids of the individual

    Stimulation of Capacitative Calcium Entry in HL-60 Cells By Nanosecond Pulsed Electric Fields

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    Nanosecond pulsed electric fields (nsPEFs) are hypothesized to affect intracellular structures in living cells providing a new means to modulate cell signal transduction mechanisms. The effects of nsPEFs on the release of internal calcium and activation of calcium influx in HL-60 cells were investigated by using real time fluorescent microscopy with Fluo-3 and fluorometry with Fura-2. nsPEFs induced an increase in intracellular calcium levels that was seen in all cells. With pulses of 60 ns duration and electric fields between 4 and 15 kV/cm, intracellular calcium increased 200-700 nM, respectively, above basal levels (similar to100 nM), while the uptake of propidium iodide was absent. This suggests that increases in intracellular calcium were not because of plasma membrane electroporation. nsPEF and the purinergic agonist UTP induced calcium mobilization in the presence and absence of extracellular calcium with similar kinetics and appeared to target the same inositol 1,4,5-trisphosphate- and thapsigargin-sensitive calcium pools in the endoplasmic reticulum. For cells exposed to either nsPEF or UTP in the absence of extracellular calcium, there was an electric field-dependent or UTP dose-dependent increase in capacitative calcium entry when calcium was added to the extracellular media. These findings suggest that nsPEFs, like ligand-mediated responses, release calcium from similar internal calcium pools and thus activate plasma membrane calcium influx channels or capacitative calcium entry
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