Ca-Zn-Sn-Se (CZTSe) ince filmlerinin üretilmesi ve aygıt özelliklerinin belirlenmesi.

Thin Film Solar Cell has received a considerable attention in the photovoltaic industry. While the efficiency of thin film amorphous silicon is about %14, the efficiency of Cu(In,Ga)Se2 (CIGS) thin film based solar cells which are very popular in recent years, reached the value of %20. But CIGS based solar cells have some constraints such as their extensive and large scale production in terms of availability of its constituent elements. On the other hand, Kesterite based solar cells such as Cu2ZnSnSe4 (CZTSe) have been more popular due to their constituent elements, such as Zn and Sn which are more abundant and less expensive than In and Ga. These thin film materials are direct band gap semiconductors. Their absorption coefficient values are over 104 cm-1 and the band gap values of them are in the range of 1.45-1.6 eV. These values are close to the values for the ideal solar cell. In this study, Cu-Zn-S-Se compounds belonging to Kesterite family have been deposited as a thin film. Thermal evaporation has been used as deposition method. Then electrical, optical and structural characterizations of CZTSe thin films have been carried out and the device application of the thin film has been studied to get efficient solar cell production.Ph.D. - Doctoral Progra

Investigation Of The Device Properties Of Cztse Thin Films For Solar Cells

Thin Film Solar Cell has received a considerable attention in the photovoltaic industry. While the efficiency of thin film amorphous silicon is about %14, the efficiency of Cu(In,Ga)Se2 (CIGS) thin film based solar cells ,is very popular in the recent year, reached the value of %20. But CIGS based solar cells have some constraints such as its extensive and large scale production in terms of availability of its constituent elements. On the other hand, Kesterit based solar cells such as Cu2ZnSnSe4 (CZTSe) have been more popular due to its constituent elements, such as Zn and Sn, are more abundant and less expensive than In and Ga. These new thin film structures are direct band gap semiconductor. Their absorption coefficient value is over 104 cm-1 and the band gap value of them is about in the range of 1.45-1.6 eV [1-4]. These values are close to the values for the ideal solar cell. In this work, Cu-Zn-SnSe compounds belonging to Kesterit family will be deposited as a thin film on n type Si wafer in a stacked layer form. Then Al/n-Si/p-CZTSe/Ag heterojunction structure was fabricated to get the device properties of this film. Temperature dependent current-voltage (I-V) measurements and frequency dependent capacitance-voltage (C-V) measurements were carried out to investigate the device characteristics. Device parameters such as diode ideality factor (n), barrier height, series and shunt resistances were obtained and the conduction mechanisms were analyzed in different temperature regions by the help of the I-V analysis. From C-V measurements, the built-in potential and the acceptordonor level densities were determined

Saçtırma yöntemiyle üretilen Ag Zengin AgInSe2 ince filmlerinin özellikleri

Bu çalışmada, AgInSe2 (AIS) ince film yapıları ultrasonik banyoda temizlenmiş cam alttaşlar üzerine saçtırma yöntemiyle üretildi. Üretim sırasında, alttaş sıcaklığı oda sıcaklığında tutuldu ve ince film örnekleri Ag, In2Se3 ve Se hedefleri kullanılarak eş-zamanlı olarak büyütüldü. Üretim sonrasında, elde edilen örneklerde Se eksikliğini önlemek için Se hedefi kullanılarak selenizasyon işlemi yapıldı. Üretilen AIS ince filmleri, ilk olarak üretim sonrası herhangi bir işlem görmeden, yapısal, elektriksel ve optik özellikleri açısından incelendi. Ag zengin ve amorf yapıda olduğu belirlenen bu örnekler üzerinde ısıl işlem altında malzeme özelliklerinin incelenmesi için 100-300°C aralığında tavlandı. Malzeme özelliklerindeki ısıl işlem etkisi, filmlerin üretim sonrası sahip olduğu özellikler ile karşılaştırıldı