Sang et milieu intérieur du Nord-Vietnamien

Baylet R. J. Sang et milieu intérieur du Nord-Vietnamien. In: Bulletins et Mémoires de la Société d'anthropologie de Paris, X° Série. Tome 9 fascicule 4-6, 1958. pp. 130-137

Effect of Ar and N-2 addition on CH4-H-2 based chemistry inductively coupled plasma etching of HgCdTe

International audienceMercury cadmium telluride (MCT) CH4-H-2 based chemistry inductively coupled plasma (ICP) etching mechanisms are investigated. The effect of Ar and N-2 addition in the mixture on plasma and MCT surface characteristics are studied by Langmuir probe, mass spectrometry, and x-ray photoelectron spectroscopy (XPS). In the authors' conditions, the HgTe faster removal than CdTe leads to the formation of a CdTe rich layer in the first 30 s of plasma exposure. Ion flux intensity and composition are only slightly influenced by N-2 addition while a strong effect is shown on neutral species by the formation of NH3, HCN, and the increase in CH3 radical density. At the opposite, Ar addition to the gas mixture leads to a total ion flux increase and promote CH3+ formation while small changes are observed on neutral species. In our low pressure and high density conditions, same order of magnitude of ion and neutral CH3 flux on MCT surface is found, suggesting a chemical contribution of CH3+ ions in MCT etching. This is confirmed by a strong correlation of the MCT etching yield versus total (neutral and ionic) CH3 flux. These results suggest that the etching is limited by the supply of CH3 to the surface

Groupes sanguins dans la population nord-vietnamienne du delta tonkinois

Baylet R. J., Ngog Hoan Vu. Groupes sanguins dans la population nord-vietnamienne du delta tonkinois. In: Bulletins et Mémoires de la Société d'anthropologie de Paris, X° Série. Tome 7 fascicule 5-6, 1956. pp. 400-403

Characterization of Plasma Etching Process Damage in HgCdTe

International audienceMicrostructural and electrical damage to n-type long-wavelength infrared Hg1−x Cd x Te (MCT) following CH4-H2-based inductively coupled plasma etching has been investigated. While the damage from such etching processes to MCT has previously been characterized for planar full-wafer etching, in this communication we present the results of an investigation of the damage incurred to etched sidewalls, whose faces constitute the majority of the etched surface in novel architectures. Auger electron spectroscopy was used to monitor the evolution of X Cd beneath etched surfaces. So far, no X Cd evolution has been detected underneath etched surfaces within a ΔX Cd = 0.02 resolution. Conductivity and minority-carrier lifetime have been studied on patterned photoconductors, from which it is possible to extract a surface recombination velocity (SRV). These studies have shown surface conductivity variations and SRV shifts of several orders of magnitude, depending on the etching process used

On the minimum thickness of doped electron/hole transport layers in organic semiconductor devices

International audienc