Two regimes for effects of surface disorder on the zero-bias conductance peak of tunnel junctions involving d-wave superconductors

Impurity-induced quasiparticle bound states on a pair-breaking surface of a d-wave superconductor are theoretically described, taking into account hybridization of impurity- and surface-induced Andreev states. Further a theory for effects of surface disorder (of thin impurity surface layer) on the low-bias conductance of tunnel junctions is developed. We find a threshold $n_c$ for surface impurity concentration $n_S$, which separates the two regimes for surface impurity effects on the zero-bias conductance peak (ZBCP). Below the threshold, surface impurities do not broaden the ZBCP, but effectively reduce its weight and generate impurity bands. For low $n_S$ impurity bands can be, in principle, resolved experimentally, being centered at energies of bound states induced by an isolated impurity on the surface. For larger $n_S$ impurity bands are distorted, move to lower energies and, beginning with the threshold concentration $n_S=n_c$, become centered at zero energy. With increasing $n_S$ above the threshold, the ZBCP is quickly destroyed in the case of strong scatterers, while it is gradually suppressed and broaden in the presence of weak impurity potentials. More realistic cases, taking into account additional broadening, not related to the surface disorder, are also considered.Comment: 9 pages, 7 figure

Geometric-phase-induced false electric dipole moment signals for particles in traps

Theories are developed to evaluate Larmor frequency shifts, derived from geometric phases, in experiments to measure electric dipole moments (EDMs) of trapped, atoms, molecules and neutrons. A part of these shifts is proportional to the applied electric field and can be interpreted falsely as an electric dipole moment. A comparison is made between our theoretical predictions for these shifts and some results from our recent experiments, which shows agreement to within the experimental errors of 15 %. The comparison also demonstrates that some trapped particle EDM experiments have reached the sensitivity where stringent precautions are needed to minimise and control such false EDMs. Computer simulations of these processes are also described. They give good agreement with the analytical results and they extend the study by investigating the influence of varying surface reflection laws in the hard walled traps considered. They also explore the possibility to suppress such false EDMs by introducing collisions with buffer gas particles. Some analytic results for frequency shifts proportional to the square of the E-field are also given and there are results for the averaging of the B-field in the absence of an E-field

Quasiclassical magnetotransport in a random array of antidots

We study theoretically the magnetoresistance $\rho_{xx}(B)$ of a two-dimensional electron gas scattered by a random ensemble of impenetrable discs in the presence of a long-range correlated random potential. We believe that this model describes a high-mobility semiconductor heterostructure with a random array of antidots. We show that the interplay of scattering by the two types of disorder generates new behavior of $\rho_{xx}(B)$ which is absent for only one kind of disorder. We demonstrate that even a weak long-range disorder becomes important with increasing $B$. In particular, although $\rho_{xx}(B)$ vanishes in the limit of large $B$ when only one type of disorder is present, we show that it keeps growing with increasing $B$ in the antidot array in the presence of smooth disorder. The reversal of the behavior of $\rho_{xx}(B)$ is due to a mutual destruction of the quasiclassical localization induced by a strong magnetic field: specifically, the adiabatic localization in the long-range Gaussian disorder is washed out by the scattering on hard discs, whereas the adiabatic drift and related percolation of cyclotron orbits destroys the localization in the dilute system of hard discs. For intermediate magnetic fields in a dilute antidot array, we show the existence of a strong negative magnetoresistance, which leads to a nonmonotonic dependence of $\rho_{xx}(B)$.Comment: 21 pages, 13 figure

Excitonic effects on the two-color coherent control of interband transitions in bulk semiconductors

Quantum interference between one- and two-photon absorption pathways allows coherent control of interband transitions in unbiased bulk semiconductors; carrier population, carrier spin polarization, photocurrent injection, and spin current injection may all be controlled. We extend the theory of these processes to include the electron-hole interaction. Our focus is on photon energies that excite carriers above the band edge, but close enough to it so that transition amplitudes based on low order expansions in $\mathbf{k}$ are applicable; both allowed-allowed and allowed-forbidden two-photon transition amplitudes are included. Analytic solutions are obtained using the effective mass theory of Wannier excitons; degenerate bands are accounted for, but envelope-hole coupling is neglected. We find a Coulomb enhancement of two-color coherent control process, and relate it to the Coulomb enhancements of one- and two-photon absorption. In addition, we find a frequency dependent phase shift in the dependence of photocurrent and spin current on the optical phases. The phase shift decreases monotonically from $\pi /2$ at the band edge to 0 over an energy range governed by the exciton binding energy. It is the difference between the partial wave phase shifts of the electron-hole envelope function reached by one- and two-photon pathways.Comment: 31 pages, 4 figures, to be published in Phys. Rev.

Giant negative magnetoresistance in high-mobility 2D electron systems

We report on a giant negative magnetoresistance in very high mobility GaAs/AlGaAs heterostructures and quantum wells. The effect is the strongest at $B \simeq 1$ kG, where the magnetoresistivity develops a minimum emerging at $T \lesssim 2$ K. Unlike the zero-field resistivity which saturates at $T \simeq 2$ K, the resistivity at this minimum continues to drop at an accelerated rate to much lower temperatures and becomes several times smaller than the zero-field resistivity. Unexpectedly, we also find that the effect is destroyed not only by increasing temperature but also by modest in-plane magnetic fields. The analysis shows that giant negative magnetoresistance cannot be explained by existing theories considering interaction-induced or disorder-induced corrections

Quantum point contact on graphite surface

The conductance through a quantum point contact created by a sharp and hard metal tip on the graphite surface has features which to our knowledge have not been encountered so far in metal contacts or in nanowires. In this paper we first investigate these features which emerge from the strongly directional bonding and electronic structure of graphite, and provide a theoretical understanding for the electronic conduction through quantum point contacts. Our study involves the molecular-dynamics simulations to reveal the variation of interlayer distances and atomic structure at the proximity of the contact that evolves by the tip pressing toward the surface. The effects of the elastic deformation on the electronic structure, state density at the Fermi level, and crystal potential are analyzed by performing self-consistent-field pseudopotential calculations within the local-density approximation. It is found that the metallicity of graphite increases under the uniaxial compressive strain perpendicular to the basal plane. The quantum point contact is modeled by a constriction with a realistic potential. The conductance is calculated by representing the current transporting states in Laue representation, and the variation of conductance with the evolution of contact is explained by taking the characteristic features of graphite into account. It is shown that the sequential puncturing of the layers characterizes the conductance.Comment: LaTeX, 11 pages, 9 figures (included), to be published in Phys. Rev. B, tentatively scheduled for 15 September 1998 (Volume 58, Number 12

Free particle scattering off two oscillating disks

We investigate the two-dimensional classical dynamics of the scattering of point particles by two periodically oscillating disks. The dynamics exhibits regular and chaotic scattering properties, as a function of the initial conditions and parameter values of the system. The energy is not conserved since the particles can gain and loose energy from the collisions with the disks. We find that for incident particles whose velocity is on the order of the oscillating disk velocity, the energy of the exiting particles displays non-monotonic gaps of allowed energies, and the distribution of exiting particle velocities shows significant fluctuations in the low energy regime. We also considered the case when the initial velocity distribution is Gaussian, and found that for high energies the exit velocity distribution is Gaussian with the same mean and variance. When the initial particle velocities are in the irregular regime the exit velocity distribution is Gaussian but with a smaller mean and variance. The latter result can be understood as an example of stochastic cooling. In the intermediate regime the exit velocity distribution differs significantly from Gaussian. A comparison of the results presented in this paper to previous chaotic static scattering problems is also discussed.Comment: 9 doble sided pages 13 Postscript figures, REVTEX style. To appear in Phys. Rev.

Graphite and Hexagonal Boron-Nitride Possess the Same Interlayer Distance. Why?

Graphite and hexagonal boron nitride (h-BN) are two prominent members of the family of layered materials possessing a hexagonal lattice. While graphite has non-polar homo-nuclear C-C intra-layer bonds, h-BN presents highly polar B-N bonds resulting in different optimal stacking modes of the two materials in bulk form. Furthermore, the static polarizabilities of the constituent atoms considerably differ from each other suggesting large differences in the dispersive component of the interlayer bonding. Despite these major differences both materials present practically identical interlayer distances. To understand this finding, a comparative study of the nature of the interlayer bonding in both materials is presented. A full lattice sum of the interactions between the partially charged atomic centers in h-BN results in vanishingly small monopolar electrostatic contributions to the interlayer binding energy. Higher order electrostatic multipoles, exchange, and short-range correlation contributions are found to be very similar in both materials and to almost completely cancel out by the Pauli repulsions at physically relevant interlayer distances resulting in a marginal effective contribution to the interlayer binding. Further analysis of the dispersive energy term reveals that despite the large differences in the individual atomic polarizabilities the hetero-atomic B-N C6 coefficient is very similar to the homo-atomic C-C coefficient in the hexagonal bulk form resulting in very similar dispersive contribution to the interlayer binding. The overall binding energy curves of both materials are thus very similar predicting practically the same interlayer distance and very similar binding energies.Comment: 18 pages, 5 figures, 2 table

Monotonic growth of interlayer magnetoresistance in strong magnetic field in very anisotropic layered metals

It is shown, that the monotonic part of interlayer electronic conductivity strongly decreases in high magnetic field perpendicular to the conducting layers. We consider only the coherent interlayer tunnelling, and the obtained result strongly contradicts the standard theory. This effect appears in very anisotropic layered quasi-two-dimensional metals, when the interlayer transfer integral is less than the Landau level separation.Comment: 4 pages, no figure

'Prove me the bam!': victimization and agency in the lives of young women who commit violent offences

This article reviews the evidence regarding young women’s involvement in violent crime and, drawing on recent research carried out in HMPYOI Cornton Vale in Scotland, provides an overview of the characteristics, needs and deeds of young women sentenced to imprisonment for violent offending. Through the use of direct quotations, the article suggests that young women’s anger and aggression is often related to their experiences of family violence and abuse, and the acquisition of a negative worldview in which other people are considered as being 'out to get you' or ready to 'put one over on you'. The young women survived in these circumstances, not by adopting discourses that cast them as exploited victims, but by drawing on (sub)cultural norms and values which promote pre-emptive violence and the defence of respect. The implications of these findings for those who work with such young women are also discussed