19 research outputs found

    Properties of Nitrogen/Silicon Doped Vertically Oriented Graphene Produced by ICP CVD Roll-to-Roll Technology

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    Simultaneous mass production of high quality vertically oriented graphene nanostructures and doping them by using an inductively coupled plasma chemical vapor deposition (ICP CVD) is a technological problem because little is understood about their growth mechanism over enlarged surfaces. We introduce a new method that combines the ICP CVD with roll-to-roll technology to enable the in-situ preparation of vertically oriented graphene by using propane as a precursor gas and nitrogen or silicon as dopants. This new technology enables preparation of vertically oriented graphene with distinct morphology and composition on a moving copper foil substrate at a lower cost. The technological parameters such as deposition time (1–30 min), gas partial pressure, composition of the gas mixture (propane, argon, nitrogen or silane), heating treatment (1–60 min) and temperature (350–500 °C) were varied to reveal the nanostructure growth, the evolution of its morphology and heteroatom’s intercalation by nitrogen or silicon. Unique nanostructures were examined by FE-SEM microscopy, Raman spectroscopy and energy dispersive X-Ray scattering techniques. The undoped and nitrogen- or silicon-doped nanostructures can be prepared with the full area coverage of the copper substrate on industrially manufactured surface defects. Longer deposition time (30 min, 450 °C) causes carbon amorphization and an increased fraction of sp3-hybridized carbon, leading to enlargement of vertically oriented carbonaceous nanostructures and growth of pillars

    Vertically oriented graphene based walls and columns obtained by ICP CVD method on moving substrates as prior stage of the roll-to-roll technology

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    Superior optoelectronic properties of graphene have made this material as a special applicant in displays, touch and graphene-based screens with smaller and long-lasting batteries including the field of mobile telephony. Recently we have introduced the process for the formation of vertically oriented graphene (VOG) walls with a curved morphology by ICP CVD method. Such VOG walls represent a very promising material for different applications (e.g. miniature batteries and other optoelectronic devices) due to its unique orientation and open carbon network structure. For the first time such VOG walls have been grown directly on a moving substrate that is a prerequisite for its production by the roll-to-roll technology providing higher yield of the production process at lower cost of the product

    Micro Raman investigation of graphene synthesized by atmospheric pressure CVD on copper foil from decane

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    In this article we present the results of micro-Raman studies of graphene grown on copper foil surface by atmospheric pressure CVD using decane as precursor, nitrogen as carrier gas with zero flow of hydrogen. Analysis of Raman spectroscopy data showed that film contains spots with single layer thick graphene. We observed significant blue shift of 2D and G bands positions for mono-atomically thick graphene on copper foil. Following literature we relate this shift to the strain induced by the presence of copper substrate. Moreover, we observed changes in the defectiveness of graphene layers after the transfer, which was related to the appearance of chemically-induced defects and defects induced by changes in the mechanical strain

    Growth of few-wall carbon nanotubes with narrow diameter distribution over Fe-Mo-MgO catalyst by methane/acetylene catalytic decomposition

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    Few-wall carbon nanotubes were synthesized by methane/acetylene decomposition over bimetallic Fe-Mo catalyst with MgO (1:8:40) support at the temperature of 900°C. No calcinations and reduction pretreatments were applied to the catalytic powder. The transmission electron microscopy investigation showed that the synthesized carbon nanotubes [CNTs] have high purity and narrow diameter distribution. Raman spectrum showed that the ratio of G to D band line intensities of IG/ID is approximately 10, and the peaks in the low frequency range were attributed to the radial breathing mode corresponding to the nanotubes of small diameters. Thermogravimetric analysis data indicated no amorphous carbon phases. Experiments conducted at higher gas pressures showed the increase of CNT yield up to 83%. Mössbauer spectroscopy, magnetization measurements, X-ray diffraction, high-resolution transmission electron microscopy, and electron diffraction were employed to evaluate the nature of catalyst particles

    Femtosecond laser modification of an array of vertically aligned carbon nanotubes intercalated with Fe phase nanoparticles

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    Femtosecond lasers (FSL) are playing an increasingly important role in materials research, characterization, and modification. Due to an extremely short pulse width, interactions of FSL irradiation with solid surfaces attract special interest, and a number of unusual phenomena resulted in the formation of new materials are expected. Here, we report on a new nanostructure observed after the interaction of FSL irradiation with arrays of vertically aligned carbon nanotubes (CNTs) intercalated with iron phase catalyst nanoparticles. It was revealed that the FSL laser ablation transforms the topmost layer of CNT array into iron phase nanospheres (40 to 680 nm in diameter) located at the tip of the CNT bundles of conical shape. Besides, the smaller nanospheres (10 to 30 nm in diameter) are found to be beaded at the sides of these bundles. Some of the larger nanospheres are encapsulated into carbon shells, which sometime are found to contain CNTs. The mechanism of creation of such nanostructures is proposed.Published versio

    Microwave frequency characteristics of magnetically functionalized carbon nanotube arrays

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    This paper reports the results of a comprehensive study of the interaction of electromagnetic radiation (EMR) of the wide frequency range (8-12, 26-37, and 78-118 GHz) with arrays of vertically aligned and disordered carbon nanotubes (CNTs) which have been obtained by the floating catalyst chemical vapor deposition method. The obtained nanotubes represent a composite of multiwall CNTs with encapsulated magnetic nanoparticles of iron phases, i.e., magnetically functionalized nanotubes (MFCNTs). MFCNTs were formed on silicon substrates, and disordered arrays in the form of powder were obtained by separating the MFCNT arrays mechanically from the walls of the quartz reactor. The frequency dependences of the reflection and transmission coefficients of EMR of MFCNTs of two types were investigated. The high electromagnetic shielding efficiency (40 dB) of MFCNTs associated with the reflection of electromagnetic waves was detected. Possible mechanisms of attenuation of electromagnetic signals by aligned and disordered MFCNTs were discussed

    Simulation of hybrid integrated structures based on carbon nanotubes

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    Предложена численная комбинированная модель, предназначенная для моделирования гибридных функционально-интегрированных структур, представляющих собой совмещение резонансно-туннельного диода и полевого транзистора (РТД-ПТ). С ее помощью проведено моделирование РТД—ПТ на основе УНТ с различными индексами хиральности.The combined numerical model of hybrid integrated structures including resonant tunneling diode and field-effect transistor (RTD-FET) is proposed. Simulation of RTD-FET based on carbon nanotubes of different types (chirality) was realized with the use of the model

    Simulation of hybrid integrated structures based on carbon nanotubes

    No full text
    Предложена численная комбинированная модель, предназначенная для моделирования гибридных функционально-интегрированных структур, представляющих собой совмещение резонансно-туннельного диода и полевого транзистора (РТД-ПТ). С ее помощью проведено моделирование РТД—ПТ на основе УНТ с различными индексами хиральности.The combined numerical model of hybrid integrated structures including resonant tunneling diode and field-effect transistor (RTD-FET) is proposed. Simulation of RTD-FET based on carbon nanotubes of different types (chirality) was realized with the use of the model
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