Uncompensated magnetization and exchange-bias field in La0.7_{0.7}Sr0.3_{0.3}MnO3_3/YMnO3_3 bilayers: The influence of the ferromagnetic layer

We studied the magnetic behavior of bilayers of multiferroic and nominally antiferromagnetic o-YMnO$_3$ (375~nm thick) and ferromagnetic La$_{0.7}$Sr$_{0.3}$MnO$_3$ and La$_{0.67}$Ca$_{0.33}$MnO$_3$ ($8 \ldots 225~$nm), in particular the vertical magnetization shift $M_E$ and exchange bias field $H_E$ for different thickness and magnetic dilution of the ferromagnetic layer at different temperatures and cooling fields. We have found very large $M_E$ shifts equivalent to up to 100\% of the saturation value of the o-YMO layer alone. The overall behavior indicates that the properties of the ferromagnetic layer contribute substantially to the $M_E$ shift and that this does not correlate straightforwardly with the measured exchange bias field $H_E$.Comment: 10 figures, 8 page

On the low-field Hall coefficient of graphite

We have measured the temperature and magnetic field dependence of the Hall coefficient ($R_{\rm H}$) in three, several micrometer long multigraphene samples of thickness between $\sim 9~$to $\sim 30$~nm in the temperature range 0.1 to 200~K and up to 0.2~T field. The temperature dependence of the longitudinal resistance of two of the samples indicates the contribution from embedded interfaces running parallel to the graphene layers. At low enough temperatures and fields $R_{\rm H}$ is positive in all samples, showing a crossover to negative values at high enough fields and/or temperatures in samples with interfaces contribution. The overall results are compatible with the reported superconducting behavior of embedded interfaces in the graphite structure and indicate that the negative low magnetic field Hall coefficient is not intrinsic of the ideal graphite structure.Comment: 10 pages with 7 figures, to be published in AIP Advances (2014

Josephson-coupled superconducting regions embedded at the interfaces of highly oriented pyrolytic graphite

Transport properties of a few hundreds of nanometers thick (in the graphene plane direction) lamellae of highly oriented pyrolytic graphite (HOPG) have been investigated. Current–voltage characteristics as well as the temperature dependence of the voltage at different fixed input currents provide evidence for Josephson-coupled superconducting regions embedded in the internal two-dimensional interfaces of HOPG, reaching zero resistance at low enough temperatures

Evidence for semiconducting behavior with a narrow band gap of Bernal graphite

We have studied the resistivity of a large number of highly oriented graphite samples with areas ranging from several mm$^2$ to a few $\mu$m$^2$ and thickness from $\sim 10$nm to several tens of micrometers. The measured resistance can be explained by the parallel contribution of semiconducting graphene layers with low carrier density $< 10^9$ cm$^{-2}$ and the one from metallic-like internal interfaces. The results indicate that ideal graphite with Bernal stacking structure is a narrow-gap semiconductor with an energy gap $E_g \sim 40$meV.Comment: 14 pages, 4 Figures, to be published in New Journal of Physics (in press, 2012