32 research outputs found
Laser applications in thin-film photovoltaics
We review laser applications in thin-film photovoltaics (thin-film Si, CdTe, and Cu(In,Ga)Se2 solar cells). Lasers are applied in this growing field to manufacture modules, to monitor Si deposition processes, and to characterize opto-electrical properties of thin films. Unlike traditional panels based on crystalline silicon wafers, the individual cells of a thin-film photovoltaic module can be serially interconnected by laser scribing during fabrication. Laser scribing applications are described in detail, while other laser-based fabrication processes, such as laser-induced crystallization and pulsed laser deposition, are briefly reviewed. Lasers are also integrated into various diagnostic tools to analyze the composition of chemical vapors during deposition of Si thin films. Silane (SiH4), silane radicals (SiH3, SiH2, SiH, Si), and Si nanoparticles have all been monitored inside chemical vapor deposition systems. Finally, we review various thin-film characterization methods, in which lasers are implemente
Infrared laser-based monitoring of the silane dissociation during deposition of silicon thin films
The silane dissociation efficiency, or depletion fraction, is an important plasma parameter by means of which the film growth rate and the amorphous-to-microcrystalline silicon transition regime can be monitored in situ. In this letter we implement a homebuilt quantum cascade laser-based absorption spectrometer to measure the silane dissociation efficiency in an industrial plasma-enhanced chemical vapor deposition system. This infrared laser-based diagnostic technique is compact, sensitive, and nonintrusive. Its resolution is good enough to resolve Doppler-broadened rotovibrational absorption lines of silane. The latter feature various absorption strengths, thereby enabling depletion measurements over a wide range of process conditions
Optical emission spectroscopy to diagnose powder formation in SiH4-H2 discharges
Silane and hydrogen discharges are widely used for the deposition of silicon thin film solar cells in large area plasmaenhanced chemical vapor deposition reactors. In the case of microcrystalline silicon thin film solar cells, it is of crucial importance to increase the deposition rate in order to reduce the manufacturing costs. This can be performed by using high silane concentration, and usually high RF power and high pressure, all favorable to powder formation in the discharge that generally reduces the deposition rate as well as the deposited material quality. This work presents a study of powder formation using time-resolved optical emission spectroscopy. It is shown that this technique is suitable to detect different regimes in powder formation ranging from powder free discharge to discharge producing large dust particles. Intermediate powder formation regimes include the formation of small silicon clusters at plasma ignition as well as cycle of powder growth and ejection out of the discharge, and both are observable by this low-cost and experimentally simple technique
Versatile thin-film photovoltaic laser scribing system
We present a laser scribing system for mid-size photovoltaic modules (up to 410 Ă— 520 mm2) implementing a movable diode-pumped solid state laser. In this configuration, the heavy large-area photovoltaic module does not need to be displaced, allowing for faster and overall more compact industrial systems. Furthermore, in the vicinity of the thin-film, critical beam parameters such as the depth of focus are kept constant throughout the scribing process
Laser applications in thin-film photovoltaics
We review laser applications in thin-film photovoltaics (thin-film Si, CdTe, and Cu(In,Ga)Se2 solar cells). Lasers are applied in this growing field to manufacture modules, to monitor Si deposition processes, and to characterize opto-electrical properties of thin films. Unlike traditional panels based on crystalline silicon wafers, the individual cells of a thin-film photovoltaic module can be serially interconnected by laser scribing during fabrication. Laser scribing applications are described in detail, while other laserbased fabrication processes, such as laser-induced crystallization and pulsed laser deposition, are briefly reviewed. Lasers are also integrated into various diagnostic tools to analyze the composition of chemical vapors during deposition of Si thin films. Silane (SiH4), silane radicals (SiH3, SiH2, SiH, Si), and Si nanoparticles have all been monitored inside chemical vapor deposition systems. Finally, we review various thin-film characterization methods, in which lasers are implemented
Impact of secondary gas-phase reactions on microcrystalline silicon solar cells deposited at high rate
The role of secondary gas-phase reactions during plasma-enhanced chemical vapor deposition of microcrystalline silicon is a controversial subject. In this paper, we show that the enhancement of such reactions is associated with the improvement of material properties of absorber layers deposited at high constant rate. We detect powder, a product of secondary gas-phase reactions, via infrared laser absorption spectroscopy, laser light scattering, and optical emission spectroscopy. As the powder formation is increased, we measure a systematic improvement of device performance. This demonstrates that secondary gas-phase reactions are not detrimental to the material quality of microcrystalline silicon deposited at high rate. © 2010 American Institute of Physics
The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality
In silicon heterojunction solar cells, thin amorphous silicon layers passivate the crystalline silicon wafer surfaces. By using in situ diagnostics during plasma-enhanced chemical vapor deposition (PECVD), the authors report how the passivation quality of such layers directly relate to the plasma conditions. Good interface passivation is obtained from highly depleted silane plasmas. Based upon this finding, layers deposited in a large-area very high frequency (40.68 MHz) PECVD reactor were optimized for heterojunction solar cells, yielding aperture efficiencies up to 20.3% on 4 cm