Spin current induced magnetization oscillations in a paramagnetic disc

When electron spins are injected uniformly into a paramagnetic disc, they can precess along the demagnetizing field induced by the resulting magnetic moment. Normally this precession damps out by virtue of the spin relaxation which is present in paramagnetic materials. We propose a new mechanism to excite a steady-state form of this dynamics by injecting a constant spin current into this paramagnetic disc. We show that the rotating magnetic field generated by the eddy currents provide a torque which makes this possible. Unlike the ferromagnetic equivalent, the spin-torque-oscillator, the oscillation frequency is fixed and determined by the dimensions and intrinsic parameters of the paramagnet. The system possesses an intrinsic threshold for spin injection which needs to be overcome before steady-state precession is possible. The additional application of a magnetic field lowers this threshold. We discuss the feasibility of this effect in modern materials. Transient analysis using pump-probe techniques should give insight in the physical processes which accompany this effect

Interfacial spin-orbit torques and magnetic anisotropy in WSe₂/permalloy bilayers

Transition metal dichalcogenides (TMDs) are promising materials for efficient generation of current-induced spin-orbit torques (SOTs) on an adjacent ferromagnetic layer. Numerous effects, both interfacial and bulk, have been put forward to explain the different torques previously observed. Thus far, however, there is no clear consensus on the microscopic origin underlying the SOTs observed in these TMD/ferromagnet bilayers. To shine light on the microscopic mechanisms at play, here we perform thickness dependent SOT measurements on the semiconducting WSe2/permalloy bilayer with various WSe2 layer thickness, down to the monolayer limit. We observe a large out-of-plane field-like torque with spin-torque conductivities up to 1 × 104 (ℏ/2e) (Ωm)−1. For some devices, we also observe a smaller in-plane antidamping-like torque, with spin-torque conductivities up to 4 × 103 (ℏ/2e) (Ωm)−1, comparable to other TMD-based systems. Both torques show no clear dependence on the WSe2 thickness, as expected for a Rashba system. Unexpectedly, we observe a strong in-plane magnetic anisotropy—up to about 6.6 × 104 erg cm−3—induced in permalloy by the underlying hexagonal WSe2 crystal. Using scanning transmission electron microscopy, we confirm that the easy axis of the magnetic anisotropy is aligned to the armchair direction of the WSe2. Our results indicate a strong interplay between the ferromagnet and TMD, and unveil the nature of the SOTs in TMD-based devices. These findings open new avenues for possible methods for optimizing the torques and the interaction with interfaced magnets, important for future non-volatile magnetic devices for data processing and storage

Thermal spin transport and spin-orbit interaction in ferromagnetic/non-magnetic metals

In this article we extend the currently established diffusion theory of spin-dependent electrical conduction by including spin-dependent thermoelectricity and thermal transport. Using this theory, we propose new experiments aimed at demonstrating novel effects such as the spin-Peltier effect, the reciprocal of the recently demonstrated thermally driven spin injection, as well as the magnetic heat valve. We use finite-element methods to model specific devices in literature to demonstrate our theory. Spin-orbit effects such as anomalous-Hall, -Nernst, anisotropic magnetoresistance and spin-Hall are also included in this model

Interfacial Spin-Orbit Torques and Magnetic Anisotropy in WSe2_{2}/Permalloy Bilayers

Transition metal dichalcogenides (TMDs) are promising materials for efficient generation of current-induced spin-orbit torques on an adjacent ferromagnetic layer. Numerous effects, both interfacial and bulk, have been put forward to explain the different torques previously observed. Thus far, however, there is no clear consensus on the microscopic origin underlying the spin-orbit torques observed in these TMD/ferromagnet bilayers. To shine light on the microscopic mechanisms at play, here we perform thickness dependent spin-orbit torque measurements on the semiconducting WSe$_{2}$/permalloy bilayer with various WSe$_{2}$ layer thickness, down to the monolayer limit. We observe a large out-of-plane field-like torque with spin-torque conductivities up to $1\times10^4 ({\hbar}/2e) ({\Omega}m)^{-1}$. For some devices, we also observe a smaller in-plane antidamping-like torque, with spin-torque conductivities up to $4\times10^{3} ({\hbar}/2e) ({\Omega}m)^{-1}$, comparable to other TMD-based systems. Both torques show no clear dependence on the WSe$_{2}$ thickness, as expected for a Rashba system. Unexpectedly, we observe a strong in-plane magnetic anisotropy - up to about $6.6\times10^{4} erg/cm^{3}$ - induced in permalloy by the underlying hexagonal WSe$_{2}$ crystal. Using scanning transmission electron microscopy, we confirm that the easy axis of the magnetic anisotropy is aligned to the armchair direction of the WSe$_{2}$. Our results indicate a strong interplay between the ferromagnet and TMD, and unveil the nature of the spin-orbit torques in TMD-based devices. These findings open new avenues for possible methods for optimizing the torques and the interaction with interfaced magnets, important for future non-volatile magnetic devices for data processing and storage.Comment: 19 pages, 3 figure

Erratum: Interfacial spin-orbit torques and magnetic anisotropy in WSe2/permalloy bilayers

Upon further analysis of the data, we find that the field dependence of the B-component in figure 2(b) is more likely caused by a significant unidirectional magnetoresistance (UMR), hindering the accurate determination of a damping-like torque for our devices. We would like to stress that all the main conclusions of our work remain the same

The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors

Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet fully understood. In particular, the emergence of CPGE is not compatible with the D3h crystal symmetry of two-dimensional TMDs, and should only be possible if the symmetry of the electronic states is reduced by influences such as an external electric field or mechanical strain. Schottky contacts, nearly ubiquitous in TMD-based transistors, can provide the high electric fields causing a symmetry breaking in the devices. Here, we investigate the effect of these Schottky contacts on the CPC by characterizing the helicity-dependent photoresponse of monolayer MoSe2 devices both with direct metal-MoSe2 Schottky contacts and with h-BN tunnel barriers at the contacts. We find that, when Schottky barriers are present in the device, additional contributions to CPC become allowed, resulting in emergence of CPC for illumination at normal incidence