Parallel access alignment network with barrel switch implementation for d-ordered vector elements

An alignment network between N parallel data input ports and N parallel data outputs includes a first and a second barrel switch. The first barrel switch fed by the N parallel input ports shifts the N outputs thereof and in turn feeds the N-1 input data paths of the second barrel switch according to the relationship X=k.sup.y modulo N wherein x represents the output data path ordering of the first barrel switch, y represents the input data path ordering of the second barrel switch, and k equals a primitive root of the number N. The zero (0) ordered output data path of the first barrel switch is fed directly to the zero ordered output port. The N-1 output data paths of the second barrel switch are connected to the N output ports in the reverse ordering of the connections between the output data paths of the first barrel switch and the input data paths of the second barrel switch. The second switch is controlled by a value m, which in the preferred embodiment is produced at the output of a ROM addressed by the value d wherein d represents the incremental spacing or distance between data elements to be accessed from the N input ports, and m is generated therefrom according to the relationship d=k.sup.m modulo N

Line narrowing of AgGaSe2 optical parametric oscillator by injection seeding

Solid-state lasers are developed for atmospheric applications. Optical parametric oscillators (OPO) are being investigated as sources of tunable radiation in the 2.5-12 micron range where development of conventional lasers is subject to numerous difficulties. Parametric oscillation is a nonlinear optical technique for converting laser output to longer wavelengths. Incident photons, typically from a pulsed pump laser, are converted into two photons of longer wavelength, while satisfying energy conservation. The particular split of energy is determined by momentum conservation; the wavelength of interest is usually selected by angle orientation of the nonlinear material with respect to the direction of propagation of the pump beam. An OPO based on AgGaSe2 was considered

Activation mechanisms in sodium-doped Silicon MOSFETs

We have studied the temperature dependence of the conductivity of a silicon MOSFET containing sodium ions in the oxide above 20 K. We find the impurity band resulting from the presence of charges at the silicon-oxide interface is split into a lower and an upper band. We have observed activation of electrons from the upper band to the conduction band edge as well as from the lower to the upper band. A possible explanation implying the presence of Hubbard bands is given.Comment: published in J. Phys. : Condens. Matte

Array processor architecture connection network

A connection network is disclosed for use between a parallel array of processors and a parallel array of memory modules for establishing non-conflicting data communications paths between requested memory modules and requesting processors. The connection network includes a plurality of switching elements interposed between the processor array and the memory modules array in an Omega networking architecture. Each switching element includes a first and a second processor side port, a first and a second memory module side port, and control logic circuitry for providing data connections between the first and second processor ports and the first and second memory module ports. The control logic circuitry includes strobe logic for examining data arriving at the first and the second processor ports to indicate when the data arriving is requesting data from a requesting processor to a requested memory module. Further, connection circuitry is associated with the strobe logic for examining requesting data arriving at the first and the second processor ports for providing a data connection therefrom to the first and the second memory module ports in response thereto when the data connection so provided does not conflict with a pre-established data connection currently in use

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Array processor architecture

A high speed parallel array data processing architecture fashioned under a computational envelope approach includes a data base memory for secondary storage of programs and data, and a plurality of memory modules interconnected to a plurality of processing modules by a connection network of the Omega gender. Programs and data are fed from the data base memory to the plurality of memory modules and from hence the programs are fed through the connection network to the array of processors (one copy of each program for each processor). Execution of the programs occur with the processors operating normally quite independently of each other in a multiprocessing fashion. For data dependent operations and other suitable operations, all processors are instructed to finish one given task or program branch before all are instructed to proceed in parallel processing fashion on the next instruction. Even when functioning in the parallel processing mode however, the processors are not locked-step but execute their own copy of the program individually unless or until another overall processor array synchronization instruction is issued

Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors

We fabricated silicon metal-oxide-semiconductor field effect transistors where an additional sodium-doped layer was incorporated into the oxide to create potential fluctuations at the Si-SiO2 interface. The amplitude of these fluctuations is controlled by both the density of ions in the oxide and their position relative to the Si-SiO2 interface. Owing to the high mobility of the ions at room temperature, it is possible to move them with the application of a suitable electric field. We show that, in this configuration, such a device can be used to control both the disorder and the electron-electron interaction strength at the Si-SiO2 interface.Comment: 3 pages, 2 figure

Evidence for multiple impurity bands in sodium-doped silicon MOSFETs

We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer. We explain the variation of conductivity in terms of Coulomb interactions that are partially screened by the proximity of the metal gate. The study of the conductivity exponential prefactor and the localization length as a function of gate voltage have allowed us to determine the electronic density of states and has provided arguments for the presence of two distinct bands and a soft gap at low temperature.Comment: 4 pages; 5 figures; Published in PRB Rapid-Communication

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