P04-17. The N-glycosylation sites N295, N332 and N392 of gp120 are necessary but not sufficient for HIV-1 to be neutralized by 2G12

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Acquired hypogammaglobulinemia in HIV ‐positive subjects after liver transplantation

Introduction As more solid organ transplantations are performed in patients infected with human immunodeficiency virus ( HIV ), post‐transplant complications in this population are becoming better defined. Methods Using serum samples from the Solid Organ Transplantation in HIV : Multi‐Site Study, we studied the epidemiology of acquired hypogammaglobulinemia ( HGG ) after liver transplantation ( LT ) in 79 HIV ‐infected individuals with a median CD 4 count at enrollment of 288 (interquartile range 200–423) cells/μL. Quantitative immunoglobulin G (IgG) levels before and after LT were measured, with moderate and severe HGG defined as IgG 350–500 mg/dL and <350 mg/dL, respectively. Incidence, risk factors, and associated outcomes of moderate or worse HGG were evaluated using K aplan– M eier estimator and proportional hazards ( PH ) models. Results The 1‐year cumulative incidence of moderate or worse HGG was 12% (95% confidence interval [ CI ]: 6–22%); no new cases were observed between years 1 and 2. In a multivariate PH model, higher pre‐transplant model for end‐stage liver disease score ( P  = 0.04) and treated acute rejection ( P  = 0.04) were both identified as significant predictors of moderate or worse HGG . There was a strong association of IgG levels <500 mg/dL with non‐opportunistic serious infection (hazard ratio [95% CI ]: 3.5 [1.1–10.6]; P  = 0.03) and mortality (3.2 [1.1–9.4]; P  = 0.04). These associations held after adjustment for important determinants of infection and survival among the entire cohort. Conclusion These results suggest that a proportion of HIV ‐positive LT recipients will develop clinically significant HGG after transplantation.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/102205/1/tid12139.pd

High-fidelity simulations of CdTe vapor deposition from a new bond-order potential-based molecular dynamics method

CdTe has been a special semiconductor for constructing the lowest-cost solar cells and the CdTe-based Cd1-xZnxTe alloy has been the leading semiconductor for radiation detection applications. The performance currently achieved for the materials, however, is still far below the theoretical expectations. This is because the property-limiting nanoscale defects that are easily formed during the growth of CdTe crystals are difficult to explore in experiments. Here we demonstrate the capability of a bond order potential-based molecular dynamics method for predicting the crystalline growth of CdTe films during vapor deposition simulations. Such a method may begin to enable defects generated during vapor deposition of CdTe crystals to be accurately explored

Epitaxial Zn(x)Fe(3-x)O(4) Thin Films: A Spintronic Material with Tunable Electrical and Magnetic Properties

The ferrimagnetic spinel oxide Zn(x)Fe(3-x)O(4) combines high Curie temperature and spin polarization with tunable electrical and magnetic properties, making it a promising functional material for spintronic devices. We have grown epitaxial thin films with 0<=x<=0.9 on MgO(001) substrates with excellent structural properties both in pure Ar atmosphere and an Ar/O2 mixture by laser molecular beam epitaxy. We find that the electrical conductivity and the saturation magnetization can be tuned over a wide range during growth. Our extensive characterization of the films provides a clear picture of the underlying physics of this spinel ferrimagnet with antiparallel Fe moments on the A and B sublattice: (i) Zn substitution removes both Fe3+ moments from the A sublattice and itinerant charge carriers from the B sublattice, (ii) growth in finite oxygen partial pressure generates Fe vacancies on the B sublattice also removing itinerant charge carriers, and (iii) application of both Zn substitution and excess oxygen results in a compensation effect as Zn substitution partially removes the Fe vacancies. A decrease (increase) of charge carrier density results in a weakening (strengthening) of double exchange and thereby a decrease (increase) of conductivity and the saturation magnetization. This scenario is confirmed by the observation that the saturation magnetization scales with the longitudinal conductivity. The combination of tailored films with semiconductor materials such as ZnO in multi-functional heterostructures seems to be particularly appealing.Comment: 13 pages, 8 figures, Hall effect data removed, anti-phase boundary discussion added, accepted for publication in PRB79 (2009