Ion mixing of markers in SiO2 and Si

The amount of atomic mixing in amorphous SiO2 and Si is studied by measuring the redistribution of thin metal markers due to irradiation with 300-keV Xe+ ions. In SiO2, the mixing efficiency appears to be independent of the chemical nature of marker atoms and can be explained in terms of a linear cascade model. In Si, the mixing is found to correlate with thermally activated diffusivities of the marker species

Observation of surface states on heavily indium doped SnTe(111), a superconducting topological crystalline insulator

The topological crystalline insulator tin telluride is known to host superconductivity when doped with indium (Sn$_{1-x}$In$_{x}$Te), and for low indium contents ($x=0.04$) it is known that the topological surface states are preserved. Here we present the growth, characterization and angle resolved photoemission spectroscopy analysis of samples with much heavier In doping (up to $x\approx0.4$), a regime where the superconducting temperature is increased nearly fourfold. We demonstrate that despite strong p-type doping, Dirac-like surface states persist

Origin of Magnetic Circular Dichroism in GaMnAs: Giant Zeeman Splitting versus Spin Dependent Density of States

We present a unified interpretation of experimentally observed magnetic circular dichroism (MCD) in the ferromagnetic semiconductor (Ga,Mn)As, based on theoretical arguments, which demonstrates that MCD in this material arises primarily from a difference in the density of spin-up and spin-down states in the valence band brought about by the presence of the Mn impurity band, rather than being primarily due to the Zeeman splitting of electronic states.Comment: 4+ pages, 4 figure

Microstructure and thermal stability of transition metal nitrides and borides on GaN

Microstructure and thermal stability of ZrN/ZrB2 bilayer deposited on GaN have been studied using transmission electron microscopy methods (TEM) and secondary ion mass spectrometry (SIMS). It has been demonstrated that annealing of the contact structure at 11000C in N2 atmosphere does not lead to any observable metal/ semiconductor interaction. In contrast, a failure of the integrity of ZrN/ZrB2 metallization at 8000C, when the heat treatment is performed in O2 ambient has been observed

MICROSTRUCTURE AND THERMAL STABILITY OF TRANSITION METAL NITRIDES AND BORIDES ON GaN

ABSTRACT Microstructure and thermal stability of ZrN/ZrB 2 bilayer deposited on GaN have been studied using transmission electron microscopy methods (TEM) and secondary ion mass spectrometry (SIMS). It has been demonstrated that annealing of the contact structure at 1100 0 C in N 2 atmosphere does not lead to any observable metal/ semiconductor interaction. In contrast, a failure of the integrity of ZrN/ZrB 2 metallization at 800 0 C, when the heat treatment is performed in O 2 ambient has been observed

Resonant Photoemission Spectroscopy study on the contribution of the Yb4f states to the electronic structure of ZnO

The electronic structure of Yb implanted ZnO has been studied by the resonant photoemission spectroscopy (RPES). The contribution of Yb 4f partial density of states (PDOS) is predominant in the binding energy (BE) about 7.5 and ~11.7 eV below the VB maximum. At the resonance energy, around 182 eV, the multiplet structure with the highest BE shows the strongest resonance (around 11.7 eV) that corresponds to the 1I multiplet which is almost exclusively responsible for this resonance, while 3H and 3F states are responsible for the resonance around 7.5 eV. It was also found that the Yb 4f PDOS distribution shows some similarity to Yb2O3