Slow relaxation of conductance of amorphous hopping insulators

We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of structural defects leading to formation of polarons close to the electron hopping states. An abrupt change in the gate voltage and corresponding shift of the chemical potential change populations of the hopping sites, which then slowly relax due to rearrangements of structural defects. As a result, the density of hopping states becomes time dependent on a scale relevant to rearrangement of the structural defects leading to the excess time dependent conductivity.Comment: 6 pages, 1 figur

Superfluid-insulator transition and BCS-BEC crossover in dirty ultracold Fermi gas

Superfluid-insulator transition in an ultracold Fermi gas in the external disorder potential of the amplitude $V_0$ is studied as a function of the concentration of the gas $n$ and magnetic field $B$ in the presence of the Feshbach resonance. We find the zero temperature phase diagrams in the plane ($B,n$) at a given $V_0$ and in the plane $(V_0, n)$ at a given $B$. Our results for BEC side of the diagram are also valid for the superfluid-insulator transition in a Bose gas.Comment: Reference added, typos correcte

Density of States and Conductivity of Granular Metal or Array of Quantum Dots

The conductivity of a granular metal or an array of quantum dots usually has the temperature dependence associated with variable range hopping within the soft Coulomb gap of density of states. This is difficult to explain because neutral dots have a hard charging gap at the Fermi level. We show that uncontrolled or intentional doping of the insulator around dots by donors leads to random charging of dots and finite bare density of states at the Fermi level. Then Coulomb interactions between electrons of distant dots results in the a soft Coulomb gap. We show that in a sparse array of dots the bare density of states oscillates as a function of concentration of donors and causes periodic changes in the temperature dependence of conductivity. In a dense array of dots the bare density of states is totally smeared if there are several donors per dot in the insulator.Comment: 13 pages, 15 figures. Some misprints are fixed. Some figures are dropped. Some small changes are given to improve the organizatio

Interacting quantum rotors in oxygen-doped germanium

We investigate the interaction effect between oxygen impurities in crystalline germanium on the basis of a quantum rotor model. The dipolar interaction of nearby oxygen impurities engenders non-trivial low-lying excitations, giving rise to anomalous behaviors for oxygen-doped germanium (Ge:O) below a few degrees Kelvin. In particular, it is theoretically predicted that Ge:O samples with oxygen-concentration of 10$^{17-18}$cm$^{-3}$ show (i) power-law specific heats below 0.1 K, and (ii) a peculiar hump in dielectric susceptibilities around 1 K. We present an interpretation for the power-law specific heats, which is based on the picture of local double-well potentials randomly distributed in Ge:O samples.Comment: 13 pages, 11 figures; to be published in Phys. Rev.

Levy statistics and anomalous transport in quantum-dot arrays

A novel model of transport is proposed to explain power law current transients and memory phenomena observed in partially ordered arrays of semiconducting nanocrystals. The model describes electron transport by a stationary Levy process of transmission events and thereby requires no time dependence of system properties. The waiting time distribution with a characteristic long tail gives rise to a nonstationary response in the presence of a voltage pulse. We report on noise measurements that agree well with the predicted non-Poissonian fluctuations in current, and discuss possible mechanisms leading to this behavior.Comment: 7 pages, 2 figure