182 research outputs found
Slow relaxation of conductance of amorphous hopping insulators
We discuss memory effects in the conductance of hopping insulators due to
slow rearrangements of structural defects leading to formation of polarons
close to the electron hopping states. An abrupt change in the gate voltage and
corresponding shift of the chemical potential change populations of the hopping
sites, which then slowly relax due to rearrangements of structural defects. As
a result, the density of hopping states becomes time dependent on a scale
relevant to rearrangement of the structural defects leading to the excess time
dependent conductivity.Comment: 6 pages, 1 figur
Superfluid-insulator transition and BCS-BEC crossover in dirty ultracold Fermi gas
Superfluid-insulator transition in an ultracold Fermi gas in the external
disorder potential of the amplitude is studied as a function of the
concentration of the gas and magnetic field in the presence of the
Feshbach resonance. We find the zero temperature phase diagrams in the plane
() at a given and in the plane at a given . Our
results for BEC side of the diagram are also valid for the superfluid-insulator
transition in a Bose gas.Comment: Reference added, typos correcte
Density of States and Conductivity of Granular Metal or Array of Quantum Dots
The conductivity of a granular metal or an array of quantum dots usually has
the temperature dependence associated with variable range hopping within the
soft Coulomb gap of density of states. This is difficult to explain because
neutral dots have a hard charging gap at the Fermi level. We show that
uncontrolled or intentional doping of the insulator around dots by donors leads
to random charging of dots and finite bare density of states at the Fermi
level. Then Coulomb interactions between electrons of distant dots results in
the a soft Coulomb gap. We show that in a sparse array of dots the bare density
of states oscillates as a function of concentration of donors and causes
periodic changes in the temperature dependence of conductivity. In a dense
array of dots the bare density of states is totally smeared if there are
several donors per dot in the insulator.Comment: 13 pages, 15 figures. Some misprints are fixed. Some figures are
dropped. Some small changes are given to improve the organizatio
Interacting quantum rotors in oxygen-doped germanium
We investigate the interaction effect between oxygen impurities in
crystalline germanium on the basis of a quantum rotor model. The dipolar
interaction of nearby oxygen impurities engenders non-trivial low-lying
excitations, giving rise to anomalous behaviors for oxygen-doped germanium
(Ge:O) below a few degrees Kelvin. In particular, it is theoretically predicted
that Ge:O samples with oxygen-concentration of 10cm show (i)
power-law specific heats below 0.1 K, and (ii) a peculiar hump in dielectric
susceptibilities around 1 K. We present an interpretation for the power-law
specific heats, which is based on the picture of local double-well potentials
randomly distributed in Ge:O samples.Comment: 13 pages, 11 figures; to be published in Phys. Rev.
Levy statistics and anomalous transport in quantum-dot arrays
A novel model of transport is proposed to explain power law current
transients and memory phenomena observed in partially ordered arrays of
semiconducting nanocrystals. The model describes electron transport by a
stationary Levy process of transmission events and thereby requires no time
dependence of system properties. The waiting time distribution with a
characteristic long tail gives rise to a nonstationary response in the presence
of a voltage pulse. We report on noise measurements that agree well with the
predicted non-Poissonian fluctuations in current, and discuss possible
mechanisms leading to this behavior.Comment: 7 pages, 2 figure
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