High-power 1.3 µm superluminescent diode

Superluminescent diodes with high output power (10 mW at 175 mA), wide spectral width (28 nm), low spectral modulation depth (<15%), wide frequency modulation bandwidth (570 MHz), and high single-mode fiber coupling efficiency (40%) are reported. The structure is based on a buried crescent laser structure with an antireflection coating and a "short-circuit" absorber to suppress lasing

Very high frequency GaAlAs laser field-effect transistor monolithic integrated circuit

A very low threshold GaAlAs buried heterostructure laser has been monolithically integrated with a recessed structure metal-semiconductor field-effect transistor on a semi-insulating substrate. At cw operation, the device has a direct modulation bandwidth of at least 4 GHz

Ultralow Threshold Quantum Well Lasers For Computer Interconnects

Optical computer interconnects appear very attractive when integration of state of the art technology of quantum well GaAs/GaA1As lasers is considered. These ultralow threshold lasers provide the very high transmission rates and the inherent simplicity required for such systems. A detailed design is presented for a 5 Gbit s-1 transmission rate, suppression of pattern effects, and a system power supply of approximately 25 mW per laser. Existing experimental data show that little extrapolation is required to reach that kind of performance from state of the art technology

Ultralow Threshold Quantum Well Lasers For Computer Interconnects

Optical computer interconnects appear very attractive when integration of state of the art technology of quantum well GaAs/GaA1As lasers is considered. These ultralow threshold lasers provide the very high transmission rates and the inherent simplicity required for such systems. A detailed design is presented for a 5 Gbit s-1 transmission rate, suppression of pattern effects, and a system power supply of approximately 25 mW per laser. Existing experimental data show that little extrapolation is required to reach that kind of performance from state of the art technology

Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices

Monolithically integrated optoelectronic circuits combine optical devices such as light sources (injection lasers and light emitting diodes) and optical detectors with solid-state semiconductor devices such as field effect transistors, bipolar transistors, and others on a single semiconductor crystal. Here we review some of the integrated circuits that have been realized and discuss the laser structures suited for integration with emphasis on the InGaAsP/InP material system. Some results of high frequency modulation and performance of integrated devices are discussed