A very low threshold GaAlAs buried heterostructure laser has been monolithically integrated with a recessed structure metal-semiconductor field-effect transistor on a semi-insulating substrate. At cw operation, the device has a direct modulation bandwidth of at least 4 GHz

Bar-Chaim, Nadav

Lau, Kam Y.

Ury, Israel

Yariv, Amnon

English

Caltech Authors - Main

Downloaded 24 May 2006 to 131.215.240.9. Redistribution subject to AIP license or copyright, see http://apl.aip.org/apl/copyright.jsp
Downloaded 24 May 2006 to 131.215.240.9. Redistribution subject to AIP license or copyright, see http://apl.aip.org/apl/copyright.jsp
Downloaded 24 May 2006 to 131.215.240.9. Redistribution subject to AIP license or copyright, see http://apl.aip.org/apl/copyright.jsp


Very high frequency GaAlAs laser field-effect transistor monolithic integrated circuit

http://authors.library.caltech.edu/5837/1/URYapl82.pdf

Very high frequency GaAlAs laser field-effect transistor monolithic integrated circuit

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