The onset of exciton absorption in modulation doped GaAs quantum wells

We study the evolution of the absorption spectrum of a modulation doped GaAs/AlGaAs semiconductor quantum well with decreasing the carrier density. We find that there is a critical density which marks the transition from a Fermi edge singularity to a hydrogen-like behavior. At this density both the lineshape and the transitions energies of the excitons change. We study the density dependence of the singularity exponent $\alpha$ and show that disorder plays an important role in determining the energy scale over which it grows.Comment: 10 pages, 3 figure

Monolithic optoelectronic integration of a GaAlAs laser, a field-effect transistor, and a photodiode

A low threshold buried heterostructure laser, a metal-semiconductor field-effect transistor, and a p-i-n photodiode have been integrated on a semi-insulating GaAs substrate. The circuit was operated as a rudimentary optical repeater. The gain bandwidth product of the repeater was measured to be 178 MHz

High-speed GaAlAs/GaAs p-i-n photodiode on a semi-insulating GaAs substrate

A high-speed, high-responsivity GaAlAs/GaAs p-i-n photodiode has been fabricated on a GaAs semi-insulating substrate. The 75-µm-diam photodiode has a 3-dB bandwidth of 2.5 GHz and responsivity of 0.45 A/W at 8400 Å (external quantum efficiency of 65%). The diode is suitable for monolithic integration with other optoelectronic devices

Gallium Aluminum Arsenide/Gallium Arsenide Integrated Optical Repeater

A low threshold buried heterostructure laser, a metal-semiconductor field effect transistor (MESFET), and a photodiode, have for the first time, been monolithically integrated on a semi-insulating GaAs substrate. This integrated optoelectronic circuit (IOEC) was operated as a rudimentary optical repeater. The incident optical signal is detected by the photodiode, amplified by the MESFET, and converted back to light by the laser. The gain bandwidth product of the repeater was measured to be 178 MHz

Quaternion normalization in additive EKF for spacecraft attitude determination

This work introduces, examines, and compares several quaternion normalization algorithms, which are shown to be an effective stage in the application of the additive extended Kalman filter (EKF) to spacecraft attitude determination, which is based on vector measurements. Two new normalization schemes are introduced. They are compared with one another and with the known brute force normalization scheme, and their efficiency is examined. Simulated satellite data are used to demonstrate the performance of all three schemes. A fourth scheme is suggested for future research. Although the schemes were tested for spacecraft attitude determination, the conclusions are general and hold for attitude determination of any three dimensional body when based on vector measurements, and use an additive EKF for estimation, and the quaternion for specifying the attitude

The absorption spectrum around nu=1: evidence for a small size Skyrmion

We measure the absorption spectrum of a two-dimensional electron system (2DES) in a GaAs quantum well in the presence of a perpendicular magnetic field. We focus on the absorption spectrum into the lowest Landau Level around nu=1. We find that the spectrum consists of bound electron-hole complexes, trion and exciton like. We show that their oscillator strength is a powerful probe of the 2DES spatial correlations. We find that near nu=1 the 2DES ground state consists of Skyrmions of small size (a few magnetic lengths).Comment: To be published in Phys Rev Lett. To be presented in ICSP2004, Flagstaff, Arizona. 4 figures (1 of them in color). 5 page

Gallium Arsenide Monolithic Optoelectronic Circuits

The optical properties of GaAs make it a very useful material for the fabrication of optical emitters and detectors. GaAs also possesses electronic properties which allow the fabrication of high speed electronic devices which are superior to conventional silicon devices. Monolithic optoelectronic circuits are formed by the integration of optical and electronic devices on a single GaAs substrate. Integration of many devices is most easily accomplished on a semi-insulating (SI) sub-strate. Several laser structures have been fabricated on SI GaAs substrates. Some of these lasers have been integrated with Gunn diodes and with metal semiconductor field effect transistors (MESFETs). An integrated optical repeater has been demonstrated in which MESFETs are used for optical detection and electronic amplification, and a laser is used to regenerate the optical signal. Monolithic optoelectronic circuits have also been constructed on conducting substrates. A heterojunction bipolar transistor driver has been integrated with a laser on an n-type GaAs substrate

Whispering gallery lasers on semi-insulating GaAs substrates

Double heterostructure lasers are described in which light is guided by total internal reflection along a dielectric interface formed by the perimeter of an etched mesa. By means of the crowding effect, injection current is restricted to a narrow strip adjacent to the edge of the mesa. This results in the preferential excitation of optical modes which are localized in the vicinity of the dielectric interface. Both half-ring lasers formed at a single cleaved facet and quarter-ring lasers formed at a cleaved corner were fabricated