10 research outputs found

    Effects of Defects on Photocatalytic Activity of Hydrogen-Treated Titanium Oxide Nanobelts

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    Previous studies have shown that hydrogen treatment leads to the formation of blue to black TiO_2, which exhibits photocatalytic activity different from that of white pristine TiO_2. However, the underlying mechanism remains poorly understood. Herein, density functional theory is combined with comprehensive analytical approaches such as X-ray absorption near edge structure spectroscopy and transient absorption spectroscopy to gain fundamental understanding of the correlation among the oxygen vacancy, electronic band structure, charge separation, charge carrier lifetime, reactive oxygen species (ROS) generation, and photocatalytic activity. The present work reveals that hydrogen treatment results in chemical reduction of TiO_2, inducing surface and subsurface oxygen vacancies, which create shallow and deep sub-band gap Ti(III) states below the conduction band. This leads to a blue color but limited enhancement of visible light photocatalytic activity up to 440 nm at the cost of reduced ultraviolet photocatalytic activity. The extended light absorption spectral range for reduced TiO_2 is ascribed to both the defect-to-conduction band transitions and the valence band-to-defect transitions. The photogenerated charge carriers from the defect states to the conduction band have lifetimes too short to drive photocatalysis. The Ti(III) deep and shallow trap states below the conduction band are also found to reduce the lifetime of photogenerated charge carriers under ultraviolet light irradiation. The ROS generated by the reduced TiO_2 are less than those generated by pristine TiO_2. Consequently, the reduced TiO_2 exhibits ultraviolet-responsive photocatalytic activity worse than that of pristine TiO_2. This report shows that increasing the light absorption spectral range of a semiconductor by doping or introduction of defects does not necessarily guarantee an increase in photocatalytic activity

    Effects of Defects on Photocatalytic Activity of Hydrogen-Treated Titanium Oxide Nanobelts

    Get PDF
    Previous studies have shown that hydrogen treatment leads to the formation of blue to black TiO_2, which exhibits photocatalytic activity different from that of white pristine TiO_2. However, the underlying mechanism remains poorly understood. Herein, density functional theory is combined with comprehensive analytical approaches such as X-ray absorption near edge structure spectroscopy and transient absorption spectroscopy to gain fundamental understanding of the correlation among the oxygen vacancy, electronic band structure, charge separation, charge carrier lifetime, reactive oxygen species (ROS) generation, and photocatalytic activity. The present work reveals that hydrogen treatment results in chemical reduction of TiO_2, inducing surface and subsurface oxygen vacancies, which create shallow and deep sub-band gap Ti(III) states below the conduction band. This leads to a blue color but limited enhancement of visible light photocatalytic activity up to 440 nm at the cost of reduced ultraviolet photocatalytic activity. The extended light absorption spectral range for reduced TiO_2 is ascribed to both the defect-to-conduction band transitions and the valence band-to-defect transitions. The photogenerated charge carriers from the defect states to the conduction band have lifetimes too short to drive photocatalysis. The Ti(III) deep and shallow trap states below the conduction band are also found to reduce the lifetime of photogenerated charge carriers under ultraviolet light irradiation. The ROS generated by the reduced TiO_2 are less than those generated by pristine TiO_2. Consequently, the reduced TiO_2 exhibits ultraviolet-responsive photocatalytic activity worse than that of pristine TiO_2. This report shows that increasing the light absorption spectral range of a semiconductor by doping or introduction of defects does not necessarily guarantee an increase in photocatalytic activity

    Research on Hydrophobic Properties of Grating Structure on Monocrystalline Silicon Fabricated Using Micromachining

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    In this paper, micromilling was used to process the surface of single crystal silicon, and six different structural parameters of the grating structure were tested to get the contact angle in a different wettability. The contact angle obtained by the experiment was compared with the theoretical values of the Wenzel and Cassie model optimized based on the characteristics of micromilling. The relationship between structural parameters and wettability was verified. First, the contact angle of the parallel grating structure was greater than the vertical direction, which was influenced by the solid-liquid interface tension. Second, the hydrophobicity of the specimen was in good agreement with the predicted trend of the optimized prediction model C when the width of the convex is reduced. The support of the theoretical model to the experimental results is instructive to the construction of the structure. In addition, the molecular dynamics were used to verify the hydrophobicity of grating structures from a molecular point of view

    Research on the Hydrophobicity of Square Column Structures on Monocrystalline Silicon Fabricated Using Micro-Machining

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    The theoretical prediction models of contact angle were constructed by considering the interface free energy. Then, the square column structure on monocrystalline silicon was fabricated using micro-milling. The rationality of prediction models was validated by regulating the parameters of the square column. It should be mentioned that the whole construction process was facile and efficient. After processing, the hydrophobicity of monocrystalline silicon with the square column structure was improved. The static contact angle of the processed monocrystalline silicon reached 165.8° when the side length of the square column was 60 μm. In addition, the correctness of the prediction models was verified from the perspective of molecular dynamics. The prediction models of contact angle were of great value for the practical application

    Tuning Phosphorene Nanoribbon Electronic Structure through Edge Oxidization

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    Molecular orbital theory predicts that interactions between lone-pair electrons give rise to van der Waals forces between layers due to the nonequivalent hybridization in bulk black phosphorus. First-principles calculations show that phosphorene nanoribbons (PNRs) have a high activity and can be bonded easily with oxygen atoms and hydroxyl groups, indicating that the PNRs can be oxidized easily. The cliff PNR configuration can be maintained when it is passivated with hydroxyl groups, indicating that it could be stable in a strong alkaline environment. Upon oxidation of their zigzag, armchair, and cliff edges, phosphorene nanoribbons can be changed from semimetallic to semiconducting, and the band gap can be changed from direct to indirect. OHO- [(OH + O)-] and OH- [(O + H)-] passivated PNRs have intrinsic spin magnetic moments of approximately 2.00 μ<sub>B</sub>, which originate from the edge unsaturation electrons and the symmetry reduction. Therefore, oxidized PNRs might have potential applications in photoelectronic and spinelectronic devices

    Enhancing thermoelectric performance of n-type AgBi3S5 through synergistically optimizing the effective mass and carrier mobility

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    AgBi3S5 is a new n-type thermoelectric material that is environmentally friendly and composed of elements of earth-abundant, non-toxic and high performance-cost ratio. This compound features an intrinsically low thermal conductivity derived from its complex monoclinic structure. However, the terrible electrical transport properties greatly limited the improvement of thermoelectric performance. Most previous studies considered that carrier concentration is the main reason for low electrical conductivity and focused on improving carrier concentration by aliovalent ion doping. In this work, we found that the critical parameter that restricts the electric transport performance of AgBi3S5 was the extremely low carrier mobility instead of the carrier concentration. According to the Pisarenko relationships and density functional theory calculations, Nb doping can sharpen the conduction band of AgBi3S5, which contributes to reducing the effective mass and improving the carrier mobility. With a further increase of the Nb doping content, the conduction band convergence can enlarge the effective mass and preserve the carrier mobility. Combined with the decrease in lattice thermal conductivity due to the intensive phone scattering, a maximum ZT value of ∼0.50 at 773 K was achieved in Ag0.97Nb0.03Bi3S5, which was ∼109.6% higher than that of pure AgBi3S5. This work will stimulate the new exploration of high-performance thermoelectric materials in ternary metal sulfides

    Monoclinic Lu<sub>2–<i>x</i></sub>Sm<sub><i>x</i></sub>WO<sub>6</sub>‑Based White Light-Emitting Phosphors: From Ground–Excited-States Calculation Prediction to Experiment Realization

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    Through ground state and constrained density function calculations, Sm<sup>3+</sup> ions luminescence in self-activated monoclinic Lu<sub>2</sub>WO<sub>6</sub> was originated from intra 4f → 4f transitions, not inter 5d → 4f transitions. Theoretically the white luminescence was obtained by combining red and blue-green emissions of 4f energy levels and W–O charge transfer transitions. Experimentally, pure and Sm<sup>3+</sup> doping Lu<sub>2</sub>WO<sub>6</sub> powders were synthesized using solid phase reaction calcined in air atmosphere. By the analysis of X-ray photoelectron spectroscopy and Rietveld refinement, element Sm charge state was trivalent, and Sm<sup>3+</sup> doping was concentration-dependent selectively doping in three Lu sites. With the increase of Sm<sup>3+</sup> concentrations, the color coordinates changed gradually from blue (0.17, 0.17) through white light (0.33, 0.25) toward orange (0.44, 0.32) in the visible spectral under 325 nm excitation. On the basis of the theoretical prediction and experimental preparation, a white emission LED lamp was produced using a 365 nm ultraviolet chip and Lu<sub>1.99</sub>Sm<sub>0.01</sub>WO<sub>6</sub> phosphor. The present design method can be applied to select excellent activators from a large number of rare-earth (Re) ions like Sm<sup>3+</sup> and Eu<sup>3+/2+</sup> or non-Re ions like Bi<sup>3+</sup> and Mn<sup>4+</sup> in various matrixes

    Oxygen Vacancy Effect on Photoluminescence Properties of Self-Activated Yttrium Tungstate

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    A series of single-phase yttrium tungstate powders were synthesized through solid-state reaction under air or argon atmosphere. All powders showed broad band emission in the visible light region, and the argon-calcined samples presented strong near-infrared luminescence. Moreover, the long-wave excitation bands peaking at 340, 378, 380, 490, and 523 nm depended critically on the calcination atmosphere and temperature. The emergence of these new excitation bands was ascribed to different oxygen vacancy concentrations with the analysis of the first-principle calculation, Raman and X-ray absorption fine structure spectra. The oxygen vacancies caused the reduction of the average coordination number of tungsten, and the position of the localized energy band changed with the oxygen vacancy concentration. Finally, a schematic photoluminescence excitation model was proposed via anion and cation charge transfer. The obtained results promise to be very useful in interpreting self-activated tungstate luminescence mechanism. They can also serve as guide line for tuning the luminescence performance of yttrium tungstate and related materials
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