Importance and development opportunities of the Port of Boston in relation to trade

Includes appendix. Thesis (M.B.A.)--Boston Universit

Evolution of optical properties of chromium spinels CdCr2_2O4_4, HgCr2_2S4_4, and ZnCr2_2Se4_4 under high pressure

We report pressure-dependent reflection and transmission measurements on ZnCr$_2$Se$_4$, HgCr$_2$S$_4$, and CdCr$_2$O$_4$ single crystals at room temperature over a broad spectral range 200-24000 cm$^{-1}$. The pressure dependence of the phonon modes and the high-frequency electronic excitations indicates that all three compounds undergo a pressure-induced structural phase transition with the critical pressure 15 GPa, 12 GPa, and 10 GPa for CdCr$_2$O$_4$, HgCr$_2$S$_4$, and ZnCr$_2$Se$_4$, respectively. The eigenfrequencies of the electronic transitions are very close to the expected values for chromium crystal-field transitions. In the case of the chalcogenides pressure induces a red shift of the electronic excitation which indicates a strong hybridization of the Cr d-bands with the chalcogenide bands.Comment: Accepted for publication in Phys. Rev.

Pressure dependence of the Verwey transition in magnetite: an infrared spectroscopic point of view

We investigated the electronic and vibrational properties of magnetite at temperatures from 300 K down to 10 K and for pressures up to 10 GPa by far-infrared reflectivity measurements. The Verwey transition is manifested by a drastic decrease of the overall reflectance and the splitting of the phonon modes as well as the activation of additional phonon modes. In the whole studied pressure range the down-shift of the overall reflectance spectrum saturates and the maximum number of phonon modes is reached at a critical temperature, which sets a lower bound for the Verwey transition temperature T$_{\mathrm{v}}$. Based on these optical results a pressure-temperature phase diagram for magnetite is proposed.Comment: 5 pages, 4 figures; accepted for publication in J. Appl. Phy

Low loss Ge-on-Si waveguides operating in the 8–14 µm atmospheric transmission window

Germanium-on-silicon waveguides were modeled, fabricated and characterized at wavelengths ranging from 7.5 to 11 µm. Measured waveguide losses are below 5 dB/cm for both TE and TM polarization and reach values of ∼ 1 dB/cm for ≥ 10 µm wavelengths for the TE polarization. This work demonstrates experimentally for the first time that Ge-on-Si is a viable waveguide platform for sensing in the molecular fingerprint spectral region. Detailed modeling and analysis is presented to identify the various loss contributions, showing that with practical techniques losses below 1 dB/cm could be achieved across the full measurement range

Benchmarking the Use of Heavily-Doped Ge Against Noble Metals for Plasmonics and Sensing in the Mid-Infrared

Despite the recent introduction of heavily-doped semiconductors for mid-infrared plasmonics, it still remains an open point whether such materials can compete with noble metals. We employ a whole set of figures of merit to thoroughly assess the use of heavily-doped Ge on Si as a mid-infrared plasmonic material and benchmark it against standard noble metals such as Au. In doing this, we design and model high-performance, CMOS compatible mid-infrared plasmonic sensors based on experimental material data reaching plasma frequencies up to about 1950 cm−1. We demonstrate that plasmonic Ge sensors can provide signal enhancements for vibrational spectroscopy above 3 orders of magnitude, thus representing a viable alternative to noble metals

Integrated Germanium-on-silicon Waveguides for Mid-infrared Photonic Sensing Chips

Germanium-on-silicon waveguides are designed, fabricated and characterized with a novel near-field infrared spectroscopy technique that allows on-chip investigation of the in-coupling efficiency. On-chip propagation along bends and straight sections up to 0.8 mm is demonstrated around λ = 6 μm

Evidence of a pressure-induced metallization process in monoclinic VO2_2

Raman and combined trasmission and reflectivity mid infrared measurements have been carried out on monoclinic VO$_2$ at room temperature over the 0-19 GPa and 0-14 GPa pressure ranges, respectively. The pressure dependence obtained for both lattice dynamics and optical gap shows a remarkable stability of the system up to P*$\sim$10 GPa. Evidence of subtle modifications of V ion arrangements within the monoclinic lattice together with the onset of a metallization process via band gap filling are observed for P$>$P*. Differently from ambient pressure, where the VO$_2$ metal phase is found only in conjunction with the rutile structure above 340 K, a new room temperature metallic phase coupled to a monoclinic structure appears accessible in the high pressure regime, thus opening to new important queries on the physics of VO$_2$.Comment: 5 pages, 3 figure

Mid-Infrared Plasmonic Platform based on Heavily Doped Epitaxial Ge-on-Si: Retrieving the Optical Constants of Thin Ge Epilayers

The n-type Ge-on-Si epitaxial material platform enables a novel paradigm for plasmonics in the mid-infrared, prompting the future development of lab-on-a-chip and subwavelength vibrational spectroscopic sensors. In order to exploit this material, through proper electrodynamic design, it is mandatory to retrieve the dielectric constants of the thin Ge epilayers with high precision due to the difference from bulk Ge crystals. Here we discuss the procedure we have employed to extract the real and imaginary part of the dielectric constants from normal incidence reflectance measurements, by combining the standard multilayer fitting procedure based on the Drude model with Kramers-Kronig transformations of absolute reflectance data in the zero-transmission range of the thin film.Comment: Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference o

Corticolimbic catecholamines in stress: A computational model of the appraisal of controllability

Appraisal of a stressful situation and the possibility to control or avoid it is thought to involve frontal-cortical mechanisms. The precise mechanism underlying this appraisal and its translation into effective stress coping (the regulation of physiological and behavioural responses) are poorly understood. Here, we propose a computational model which involves tuning motivational arousal to the appraised stressing condition. The model provides a causal explanation of the shift from active to passive coping strategies, i.e. from a condition characterised by high motivational arousal, required to deal with a situation appraised as stressful, to a condition characterised by emotional and motivational withdrawal, required when the stressful situation is appraised as uncontrollable/unavoidable. The model is motivated by results acquired via microdialysis recordings in rats and highlights the presence of two competing circuits dominated by different areas of the ventromedial prefrontal cortex: these are shown having opposite effects on several subcortical areas, affecting dopamine outflow in the striatum, and therefore controlling motivation. We start by reviewing published data supporting structure and functioning of the neural model and present the computational model itself with its essential neural mechanisms. Finally, we show the results of a new experiment, involving the condition of repeated inescapable stress, which validate most of the model's prediction