Improved Thermophotovoltaic (TPV) Performance Using Dielectric Photon Concentrations (DPC)

This report presents theoretical and experimental results, which demonstrate the feasibility of a new class of thermophotovoltaic (TPV) energy converters with greatly improved power density and efficiency. Performance improvements are based on the utilization of the enhanced photon concentrations within high refractive index materials. Analysis demonstrates that the maximum achievable photon flux for TPV applications is limited by the lowest index in the photonic cavity, and scales as the minimum refraction index squared, n{sup 2}. Utilization of the increased photon levels within high index materials greatly expands the design space limits of TPV systems, including: a 10x increase in power density, a 50% fractional increase in conversion efficiency, or alternatively reduced radiator temperature requirements to as low as {approx} 1000 F

MBE growth of GaInAsSb p/n junction diodes for thermophotovoltaic applications

This paper reports recent progress in the development of quaternary III-V thermophotovoltaic (TPV) devices based on MBE grown Ga{sub x}In{sub 1{minus}x}As{sub y}Sb{sub 1{minus}y}. TPV is of great interest for a variety of applications. The objective of this work is to develop a TPV cell which is tunable to the emission spectrum of a heated blackbody, at temperatures in the range of 1200--1473 K. One aspect of this tuning is to match the band gap, E{sub gap}, of the photovoltaic device to the peak output of the heat source., An advantage of the quarternary III-V semiconductor systems is that devices can be fabricated by molecular beam epitaxy on a suitable binary substrate, such as GaSb or InAs, and the band gap and lattice constant can be adjusted more or less independently, to match requirements. Quarternary cells, with band-gaps in the 0.5 to 0.72 eV range, have been fabricated and tested. For 0.54 eV devices the authors obtained V{sub oc} = 0.3 V and I{sub sc} = 1.5 amperes/cm{sup 2} under infrared illumination of a 1200 K blackbody. Under high illumination levels the V{sub oc} and I{sub sc} ranged from 0.5 V at 3 amperes/cm{sup 2} for 0.72 eV devices to 0.31 V at 1.2 amperes/cm{sup 2} for 0.5 eV devices, indicating good photovoltaic device characteristics over the range of bandgaps. The diode ideality factor for 0.54 eV devices ranged from 2.45 at low illumination indicating tunneling-dominated dark current, to 1.7 at high illumination intensity indicating recombination-generation dominated dark currents

System Performance Projections for TPV Energy Conversion

TPV technology has advanced rapidly in the last five years, with diode conversion efficiency approaching >30%, and filter efficiency of {approx}80%. These achievements have enabled repeatable testing of 20% efficient small systems, demonstrating the potential of TPV energy conversion. Near term technology gains support a 25% efficient technology demonstration in the two year timeframe. However, testing of full size systems, which includes efficiency degradation mechanisms, such as: nonuniform diode illumination, diode and filter variability, temperature non-uniformities, conduction/convection losses, and lifetime reliability processes needs to be performed. A preliminary analysis of these differential effects has been completed, and indicates a near term integrated system efficiency of {approx}15% is possible using current technology, with long term growth to 18-20%. This report addresses the system performance issues

The Status of Thermophotovoltaic Energy Conversion Technology at Lockheed Martin Corp.

In a thermophotovoltaic (TPV) energy conversion system, a heated surface radiates in the mid-infrared range onto photodiodes which are sensitive at these energies. Part of the absorbed energy is converted into electric output. Conversion efficiency is maximized by reducing the absorption of non-convertible energy with some form of spectral control. In a TPV system, many technology options exist. The development efforts have concentrated on flat-plate geometries with greybody radiators, low bandgap quaternary diodes, front surface tandem filters and a multi-chip module (MCM) approach that allows selective fabrication processes to match diode performance. Recently, the authors achieved conversion efficiencies of about 20% (radiator 950 C, diodes 22 C) for a module in a prototypic cavity test environment. These tests employed InGaAsSb diodes with 0.52 eV bandgap and front surface filters for spectral control. This paper provides details of the individual system components and describes the measurement technique used to record these efficiencies

The Status of Thermophotovoltaic Energy Conversion Technology at Lockheed Martin Corporation

In a thermophotovoltaic (TPV) energy conversion system, a heated surface radiates in the mid-infrared range onto photocells which are sensitive at these energies. Part of the absorbed energy is converted into electric output. Conversion efficiency is maximized by reducing the absorption of non-convertible energy with some form of spectral control. In a TPV system, many technology options exist. Our development efforts have concentrated on flat-plate geometries with greybody radiators, front surface tandem filters and a multi-chip module (MCM) approach that allows selective fabrication processes to match cell performance. Recently, we discontinued development of GaInAsSb quaternary cell semiconductor material in favor of ternary GaInAs material. In our last publication (Ref. 1), the authors reported conversion efficiencies of about 20% (radiator 950 C, cells 22 C) for small modules (1-4 cm{sup 2}) tested in a prototypic cavity test environment. Recently, we have achieved measured conversion efficiencies of about 12.5% in larger ({approx}100 cm{sup 2}) test arrays. The efficiency reduction in the larger arrays was probably due to quality and variation of the cells as well as non-uniform illumination from the hot radiator to the cold plate. Modules in these tests used GaInAsSb cells with 0.52 eV bandgap and front surface filters for spectral control. This paper provides details of the individual system components and the rationale for our technical decisions. It also describes the measurement techniques used to record these efficiencies

Current status of low-temperature radiator thermophotovoltaic devices

The current performance status of low-temperature radiator (< 1,000 C) thermophotovoltaic (TPV) devices is presented. For low-temperature radiators, both power density and efficiency are equally important in designing an effective TPV system. Comparisons of 1 cm x 1 cm, 0.55 eV InGaAs and InGaAsSb voltaic devices are presented. Currently, InGaAs lattice-mismatched devices offer superior performance in comparison to InGaAsSb lattice-matched devices, due to the former`s long-term development for numerous optoelectronic applications. However, lattice-matched antimony-based quaternaries offer numerous potential advantages

Quaternary InGaAsSb Thermophotovoltaic Diode Technology

Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency ({eta}{sub TPV}) and a power density (PD) of {eta}{sub TPV} = 19% and PD=0.58 W/cm{sup 2} were measured for T{sub radiator} = 950 C and T{sub diode} = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be {eta}{sub TPV} = 26% and PD = 0.75 W/cm{sup 2}. These limits are extended to {eta}{sub TPV} = 30% and PD = 0.85W/cm{sup 2} if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are {approx}10% lower than the predicted semi-empirical limit to open circuit voltage for a device having absorbing substrate; the voltages are {approx}17% below that for an Auger-limited device having back surface reflector and two-pass optical design

0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm{sup 2} respectively at operating at temperatures of T{sub radiator} = 950 C and T{sub diode} = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and {approx}0.85 W/cm{sup 2} could be attained under the above operating temperatures

A thermophotovoltaic energy conversion device

A thermophotovoltaic device and a method for making the thermophotovoltaic device are disclosed. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer. An optional interference filter can be formed on top of the emitter layer or the front surface window layer when it is used