On intuitionistic fuzzy sub-hyperquasigroups of hyperquasigroups

The notion of intuitionistic fuzzy sets was introduced by Atanassov as a generalization of the notion of fuzzy sets. In this paper, we consider the intuitionistic fuzzification of the concept of sub-hyperquasigroups in a hyperquasigroup and investigate some properties of such sub-hyperquasigroups. In particular, we investigate some natural equivalence relations on the set of all intuitionistic fuzzy sub-hyperquasigroups of a hyperquasigroup.Comment: 13 page

Single crystalline BaTiO_3 thin films synthesized using ion implantation induced layer transfer

Layer transfer of BaTiO3 thin films onto silicon-based substrates has been investigated. Hydrogen and helium ions were co-implanted to facilitate ion-implantation-induced layer transfer of films from BaTiO3 single crystals. From thermodynamic equilibrium calculations, we suggest that the dominant species during cavity nucleation and growth are H2, H+, H2O, Ba2+ and Ba–OH, and that the addition of hydrogen to the Ba–Ti–O system can effectively suppress volatile oxide formation during layer transfer and subsequent annealing. After ion implantation, BaTiO3 layers contain microstructural defects and hydrogen precipitates in the lattice, but after layer transfer, the single crystal is found to be stoichiometric. Using direct wafer bonding and layer splitting, single crystal BaTiO3 thin films were transferred onto amorphous Si3N4 and Pt substrates. Micro-Raman spectroscopy indicated that the density of defects generated by ion implantation in BaTiO3 can be significantly reduced during post-transfer annealing, returning the transferred layer to its single crystal state. Characterization using piezoresponse force microscopy shows that the layer transferred thin films are ferroelectric, with domain structures and piezoresponse characteristics similar to that of bulk crystals

Microstructure and properties of single crystal BaTiO3 thin films synthesized by ion implantation-induced layer transfer

Single crystal BaTiO3 thin films have been transferred onto Pt-coated and Si3N4-coated substrates by the ion implantation-induced layer transfer method using H+ and He+ ion coimplantation and subsequent annealing. The transferred BaTiO3 films are single crystalline with root mean square roughness of 17 nm. Polarized optical and piezoresponse force microscopy (PFM) indicate that the BaTiO3 film domain structure closely resembles that of bulk tetragonal BaTiO3 and atomic force microscopy shows a 90degrees a-c domain structure with a tetragonal angle of 0.5degrees-0.6degrees. Micro-Raman spectroscopy indicates that the local mode intensity is degraded in implanted BaTiO3 but recovers during anneals above the Curie temperature. The piezoelectric coefficient, d(33), is estimated from PFM to be 80-100 pm/V and the coercive electric field (E-c) is 12-20 kV/cm, comparable to those in single crystal BaTiO3

Surface evolution during crystalline silicon film growth by low-temperature hot-wire chemical vapor deposition on silicon substrates

We investigate the low-temperature growth of crystalline thin silicon films: epitaxial, twinned, and polycrystalline, by hot-wire chemical vapor deposition (HWCVD). Using Raman spectroscopy, spectroscopic ellipsometry, and atomic force microscopy, we find the relationship between surface roughness evolution and (i) the substrate temperature (230–350 °C) and (ii) the hydrogen dilution ratio (H2/SiH4=0–480). The absolute silicon film thickness for fully crystalline films is found to be the most important parameter in determining surface roughness, hydrogen being the second most important. Higher hydrogen dilution increases the surface roughness as expected. However, surface roughness increases with increasing substrate-temperature, in contrast to previous studies of crystalline Si growth. We suggest that the temperature-dependent roughness evolution is due to the role of hydrogen during the HWCVD process, which in this high hydrogen dilution regime allows for epitaxial growth on the rms roughest films through a kinetic growth regime of shadow-dominated etch and desorption and redeposition of growth species

Nanomechanical characterization of cavity growth and rupture in hydrogen-implanted single-crystal BaTiO3

A thermodynamic model of cavity nucleation and growth in ion-implanted single-crystal BaTiO3 layer is proposed, and cavity formation is related to the measured mechanical properties to better understand hydrogen implantation-induced layer transfer processes for ferroelectric thin films. The critical radius for cavity nucleation was determined experimentally from blistering experiments performed under isochronal anneal conditions and was calculated using continuum mechanical models for deformation and fracture, together with thermodynamic models. Based on thermodynamic modeling, we suggest that cavities grow toward the cracking criteria at a critical blister size whereupon gas is emitted from ruptured cavities. The main driving force for layer splitting is the reduction of the overall elastic energy stored in the implanted region during the cavity nucleation and growth as the gaseous H2 entrapped within the cavities is released. Nanoindentation measurements reveal locally the mechanical property changes within the vicinity of a single cavity. Using the measured mechanical properties at the single-cavity level, we developed three-dimensional strain and stress profiles using finite element method

Study of orientation effect on nanoscale polarization in BaTiO3 thin films using piezoresponse force microscopy

We have investigated the effect of texture on in-plane (IPP) and out- of plane (OPP) polarizations of pulsed-laser-deposited BaTiO3 thin films grown on Pt and La0.5Sr0.5CoO3 (LSCO) buffered Pt electrodes. The OPP and IPP polarizations were observed by piezoresponse force microscopy (PFM) for three-dimensional polarization analyses in conjunction with conventional diffraction methods using x-ray diffraction and reflection high energy electron diffraction measurements. BaTiO3 films grown on Pt electrodes exhibited highly (101) preferred orientation with higher IPP component whereas BaTiO3 film grown on LSCO/Pt electrodes showed (001) and (101) orientations with higher OPP component. Measured effective d(33) values of BaTiO3 films deposited on Pt and LSCO/ Pt electrodes were 14.3 and 54.0 pm/ V, respectively. Local piezoelectric strain loops obtained by OPP and IPP-PFM showed that piezoelectric properties were strongly related to film orientation

Surface evolution during low temperature epitaxial silicon growth by hot-wire chemical vapor deposition: Structural and electronic properties

We report the surface and structural evolution of hotwire chemical vapor deposited (HWCVD) crystalline Si thin films with temperature, thickness, and hydrogen dilution and the resulting growth regimes and electronic properties. We focus on a low silane partial pressure regime that leads to epitaxial growth with a polycrystalline, rather than an amorphous transition. Using scanning electron microscopy and atomic force microscopy, we find the relationship between the deposition conditions and the evolution of the surface roughness. Increasing the hydrogen dilution changes the kinetic growth regime from growth predominantly from the wire to shadow-dominated etch and finally to a regime dominated by desorption and re-deposition of growth species. Transitions between these kinetic regimes are the dominant factors governing the epitaxial–polycrystalline transition in low temperature HWCVD growth along with their electronic properties

Optimal Quantum State Estimation with Use of the No-Signaling Principle

A simple derivation of the optimal state estimation of a quantum bit was obtained by using the no-signaling principle. In particular, the no-signaling principle determines a unique form of the guessing probability independently of figures of merit, such as the fidelity or information gain. This proves that the optimal estimation for a quantum bit can be achieved by the same measurement for almost all figures of merit.Comment: 3 pages, 1 figur

Nanomechanical Characterization of Cavity Growth and Rupture in Hydrogen-Implanted Single-Crystal BaTiO\u3csub\u3e3\u3c/sub\u3e.

A thermodynamic model of cavitynucleation and growth in ion-implanted single-crystal BaTiO3 layer is proposed, and cavity formation is related to the measured mechanical properties to better understand hydrogen implantation-induced layer transfer processes for ferroelectric thin films. The critical radius for cavitynucleation was determined experimentally from blistering experiments performed under isochronal anneal conditions and was calculated using continuum mechanical models for deformation and fracture, together with thermodynamic models. Based on thermodynamic modeling, we suggest that cavitiesgrow toward the cracking criteria at a critical blister size whereupon gas is emitted from ruptured cavities. The main driving force for layer splitting is the reduction of the overall elastic energy stored in the implanted region during the cavitynucleation and growth as the gaseous H2 entrapped within the cavities is released. Nanoindentation measurements reveal locally the mechanical property changes within the vicinity of a single cavity. Using the measured mechanical properties at the single-cavity level, we developed three-dimensional strain and stress profiles using finite element method