Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors

The effect of displacement defect on SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) due to radiation is investigated using technology computer-aided design (TCAD) simulation. The position, energy level, and concentration of the displacement defect are considered as variables. The transfer characteristics, breakdown voltage, and energy loss of a double-pulse switching test circuit are analyzed. Compared with the shallow defect energy level, the deepest defect energy level with EC − 1.55 eV exhibits considerable degradation. The on-current decreases by 54% and on-resistance increases by 293% due to the displacement defect generated at the parasitic junction field-effect transistor (JFET) region next to the P-well. Due to the existence of a defect in the drift region, the breakdown voltage increased up to 21 V. In the double-pulse switching test, the impact of displacement defect on the power loss of SiC MOSFETs is negligible

Localized Electrothermal Annealing with Nanowatt Power for a Silicon Nanowire Field-Effect Transistor

This work investigates localized electrothermal annealing (ETA) with extremely low power consumption. The proposed method utilizes, for the first time, tunneling-current-induced Joule heat in a p-i-n diode, consisting of p-type, intrinsic, and n-type semiconductors. The consumed power used for dopant control is the lowest value ever reported. A metal-oxide-semiconductor field-effect transistor (MOSFET) composed of a p-i-n silicon nanowire, which is a substructure of a tunneling FET (TFET), was fabricated and utilized as a test platform to examine the annealing behaviors. A more than 2-fold increase in the on-state (<i>I</i>_ON) current was achieved using the ETA. Simulations are conducted to investigate the location of the hot spot and how its change in heat profile activates the dopants

Simulational investigation of self-aligned bilayer linear grating enabling highly enhanced responsivity of MWIR InAs/GaSb type-II superlattice (T2SL) photodetector

Abstract Linear gratings polarizers provide remarkable potential to customize the polarization properties and tailor device functionality via dimensional tuning of configurations. Here, we extensively investigate the polarization properties of single- and double-layer linear grating, mainly focusing on self-aligned bilayer linear grating (SABLG), serving as a wire grid polarizer in the mid-wavelength infrared (MWIR) region. Computational analyses revealed the polarization properties of SABLG, highlighting enhancement in TM transmission and reduction in TE transmission compared to single-layer linear gratings (SLG) due to optical cavity effects. As a result, the extinction ratio is enhanced by approximately 2724-fold in wavelength 3–6 μm. Furthermore, integrating the specially designed SABLG with an MWIR InAs/GaSb Type-II Superlattice (T2SL) photodetector yields a significantly enhanced spectral responsivity. The TM-spectral responsivity of SABLG is enhanced by around twofold than the bare device. The simulation methodology and analytical analysis presented herein provide a versatile route for designing optimized polarimetric structures integrated into infrared imaging devices, offering superior capabilities to resolve linear polarization signatures

Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing

We propose a novel synaptic design of more efficient neuromorphic edge-computing with substantially improved linearity and extremely low variability. Specifically, a parallel arrangement of ferroelectric tunnel junctions (FTJ) with an incremental pulsing scheme provides a great improvement in linearity for synaptic weight updating by averaging weight update rates of multiple devices. To enable such design with FTJ building blocks, we have demonstrated the lowest reported variability: σ / μ = 0.036 for cycle to cycle and σ / μ = 0.032 for device among six dies across an 8 inch wafer. With such devices, we further show improved synaptic performance and pattern recognition accuracy through experiments combined with simulations

Research Data supporting "Resetting the drift of Oxygen Vacancies in Ultra-Thin HZO Ferroelectric Memories by Electrical Pulse Engineering"

The dataset contains the original data files in txt files. The data contains files to re-generate figures related to: 1. Electrical methods 2. Impedance methods 3. Optical methods The dataset also contains a readme file to understand the data files and method used to plot the data in publicatio

Research data supporting "In-operando optical tracking of oxygen vacancy migration and phase change in few-nm ferroelectric HZO memories"

Data files for the manuscript. Please see the Readme.txt file for a detailed dataset description

Direct Observation for Distinct Behaviors of Gamma‐Ray Irradiation‐Induced Subgap Density‐of‐States in Amorphous InGaZnO TFTs by Multiple‐Wavelength Light Source

Abstract The amorphous In─Ga─Zn─O (a‐IGZO) thin film transistors (TFTs) have attracted attention as a cell transistor for the next generation DRAM architecture because of its low leakage current, high mobility, and the back‐end‐of‐line (BEOL) compatibility that enables monolithic 3D (M3D) integration. IGZO‐based electronic devices used in harsh environments such as radiation exposure can be vulnerable, resulting in functional failure. Here, the behavior of subgap density‐of‐states (DOS) over full subgap range according to the impactful gamma‐ray irradiation in a‐IGZO TFTs is investigated by employing DC current–voltage (I−V) data with multiple‐wavelength light sources. To understand the origins of the radiation effect, IGZO films have been also analyzed by x‐ray photoelectron spectroscopy (XPS). Considering in‐depth electrical and chemical analysis, the unexpected increase of subthreshold leakage current caused by total ionizing dose (TID) is strongly correlated with newly discovered deep‐donor states (gDDγ(E)) at the specific energy level. In particular, oxygen vacancies caused by the gamma‐ray irradiation give rise to undesirable electrical characteristics such as hysteresis effect and negative shift of threshold voltage (VT). Furthermore, the TCAD simulation results based on DOS model parameters are found to exhibit good agreement with experimental data and plausible explanation including (gDDγ(E))