Stabilization of the high-spin state of Co3+^{3+} in LaCo1−x_{1-x}Rhx_{x}O3_3

The rhodium doping in the LaCo$_{1-x}$Rh$_{x}$O$_3$ perovskite series ($x=0.02-0.5$) has been studied by X-ray diffraction, electric transport and magnetization measurements, complemented by electronic structure GGA+U calculations in supercell for different concentration regimes. No charge transfer between Co$^{3+}$ and Rh$^{3+}$ is evidenced. The diamagnetic ground state of LaCoO$_3$, based on Co$^{3+}$ in low-spin (LS) state, is disturbed even by a small doping of Rh. The driving force is the elastic energy connected with incorporation of a large Rh$^{3+}$ cation into the matrix of small LS Co$^{3+}$ cations, which is relaxed by formation of large Co$^{3+}$ in high-spin (HS) state in the next-nearest sites to the inserted Rh atom. With increasing temperature, the population of Co$^{3+}$ in HS state increases through thermal excitation, and a saturated phase is obtained close to room temperature, consisting of a nearest-neighbor correlation of small (LS Co$^{3+}$) and large (HS Co$^{3+}$ and LS Rh$^{3+}$) cations in a kind of double perovskite structure. The stabilizing role of elastic and electronic energy contributions is demonstrated in supercell calculations for dilute Rh concentration compared to other dopants with various trivalent ionic radius.Comment: 8 pages, 8 figure

Beyond the local approximation to exchange and correlation: the role of the Laplacian of the density in the energy density of Si

We model the exchange-correlation (XC) energy density of the Si crystal and atom as calculated by variational Monte Carlo (VMC) methods with a gradient analysis beyond the local density approximation (LDA). We find the Laplacian of the density to be an excellent predictor of the discrepancy between VMC and LDA energy densities in each system. A simple Laplacian-based correction to the LDA energy density is developed by means of a least square fit to the VMC XC energy density for the crystal, which fits the homogeneous electron gas and Si atom without further effort.Comment: 4 pages, 3 figures, submitted to Phys. Rev. Let

MUBs inequivalence and affine planes

There are fairly large families of unitarily inequivalent complete sets of N+1 mutually unbiased bases (MUBs) in C^N for various prime powers N. The number of such sets is not bounded above by any polynomial as a function of N. While it is standard that there is a superficial similarity between complete sets of MUBs and finite affine planes, there is an intimate relationship between these large families and affine planes. This note briefly summarizes "old" results that do not appear to be well-known concerning known families of complete sets of MUBs and their associated planes.Comment: This is the version of this paper appearing in J. Mathematical Physics 53, 032204 (2012) except for format changes due to the journal's style policie

Polylithiated (OLi2) functionalized graphane as a potential hydrogen storage material

Hydrogen storage capacity, stability, bonding mechanism and the electronic structure of polylithiated molecules (OLi2) functionalized graphane (CH) has been studied by means of first principle density functional theory (DFT). Molecular dynamics (MD) have confirmed the stability, while Bader charge analysis describe the bonding mechanism of OLi2 with CH. The binding energy of OLi2 on CH sheet has been found to be large enough to ensure its uniform distribution without any clustering. It has been found that each OLi2 unit can adsorb up to six H2 molecules resulting into a storage capacity of 12.90 wt% with adsorption energies within the range of practical H2 storage application.Comment: 11 pages, 4 figures, 1 table, Phys. Chem. Chem. Phys. (submitted

Quantifying spin Hall angles from spin pumping: Experiments and Theory

Spin Hall effects intermix spin and charge currents even in nonmagnetic materials and, therefore, ultimately may allow the use of spin transport without the need for ferromagnets. We show how spin Hall effects can be quantified by integrating permalloy/normal metal (N) bilayers into a coplanar waveguide. A dc spin current in N can be generated by spin pumping in a controllable way by ferromagnetic resonance. The transverse dc voltage detected along the permalloy/N has contributions from both the anisotropic magnetoresistance (AMR) and the spin Hall effect, which can be distinguished by their symmetries. We developed a theory that accounts for both. In this way, we determine the spin Hall angle quantitatively for Pt, Au and Mo. This approach can readily be adapted to any conducting material with even very small spin Hall angles.Comment: 4 pages, 4 figure

A hard metallic material: Osmium Diboride

We calculate the structural and electronic properties of OsB2 using density functional theory with or without taking into account spin-orbit (SO) interaction. Our results show that the bulk modulus with and without SO interaction are 364 and 365 Gpa respectively, both are in good agreement with experiment (365-395 Gpa). The evidence of covalent bonding of Os-B, which plays an important role to form a hard material, is indicated both in charge density, atoms in molecules analysis, and density of states analysis. The good metallicity and hardness of OsB2 might suggest its potential application as hard conductors.Comment: Figures improve

Identification of hydrogen bonds using quantum electrodynamics

A method for the identification of hydrogen bonds was investigated from the viewpoint of the stress tensor density proposed by Tachibana and following other works in this field. Hydrogen bonds are known to exhibit common features with ionic and covalent bonds. In quantum electrodynamics, the covalent bond has been demonstrated to display a spindle structure of the stress tensor density. Importantly, this spindle structure is also seen in the hydrogen bond, although the covalency is considerably weaker than in a typical covalent bond. Distinguishing it from the ionic bond is most imperative for the identification of the hydrogen bond. In the present study, the directionality of the hydrogen bond is investigated as the ionic bond is nearly isotropic, while the hydrogen bond exhibits the directionality. It was demonstrated that the hydrogen bond can be distinguished from the ionic bond using the angle dependence of the largest eigenvalue of the stress tensor density

Four-terminal resistance of an interacting quantum wire with weakly invasive contacts

We analyze the behavior of the four-terminal resistance, relative to the two-terminal resistance of an interacting quantum wire with an impurity, taking into account the invasiveness of the voltage probes. We consider a one-dimensional Luttinger model of spinless fermions for the wire. We treat the coupling to the voltage probes perturbatively, within the framework of non-equilibrium Green function techniques. Our investigation unveils the combined effect of impurities, electron-electron interactions and invasiveness of the probes on the possible occurrence of negative resistance.Comment: 10 pages, 7 figure

Understanding the Clean Interface between Covalent Si and Ionic Al2O3

The atomic and electronic structures of the (001)-Si/(001)-gamma-Al2O3 heterointerface are investigated by first principles total energy calculations combined with a newly developed "modified basin-hopping" method. It is found that all interface Si atoms are fourfold coordinated due to the formation of Si-O and unexpected covalent Si-Al bonds in the new abrupt interface model. And the interface has perfect electronic properties in that the unpassivated interface has a large LDA band gap and no gap levels. These results show that it is possible to have clean semiconductor-oxide interfaces