Vibrational modes in (TlGaS2)(x)-(TlGaSe2)(1-x)mixed crystals by Raman measurements: compositional dependence of the mode frequencies and line-shapes

TlGaS(2)and TlGaSe(2)ternary semiconducting compounds have been of scientific interest due to their large ultrafast optical nonlinearity characteristics. These remarkable properties make them promising semiconducting materials in photonic applications. A series of (TlGaS2)(x)-(TlGaSe2)(1-x)layered mixed crystals grown by Bridgman method were investigated from the standpoint of their Raman spectroscopy characteristics. Experimental Raman scattering study of crystals were reported in the frequency range of 80-400 cm(-1)for compositions ofx = 0, 0.25, 0.50, 0.75 and 1.0. The effects of crystal disorder on the line-width broadening of Raman-active modes were studied in detail. The asymmetry in the Raman line-shape was analyzed for two highest-frequency intralayer mode presenting two-mode behavior. It was shown that mixed crystal disorder effect is the major source for change of Raman line-shape with composition

Częstość wyładowań atmosferycznych na terytorium Azerbejdżanu

Hydrometeorological information about lightning days and period of lightning days, on the supports of OVL 110, 220, 330 kV and high objects on the territory of the republic (on the radio-television tower and lighting conductors) on the basis of statistic material, a map of lightning strokes about constant lightning strokes on the territory of the republic during a year on the 1 km" surface was compiled. The drawn up map can be used in power engineering and other objects projecting.Na podstawie statystycznych informacji meteorologicznych dotyczących liczby i częstości wyładowań atmosferycznych do elektroenergetycznych linii przesyłowych wysokiego napięcia oraz innych obiektów, takich jak maszty radiowo-telewizyjne, piorunochrony, odgromniki, została sporządzona roczna mapa gęstości wyładowań atmosferycznych na terytorium Azerbejdżanu w przeliczeniu na 1 km2. Wykreślona w ten sposób mapa może być wykorzystana w elektroenergetyce, jak i do innych celów

Structural and Optical Properties of Ga2Se3 Crystals by Spectroscopic Ellipsometry

Optical and crystalline structure properties of Ga2Se3 crystals were analyzed utilizing ellipsometry and x-ray diffraction (XRD) experiments, respectively. Components of the complex dielectric function (epsilon=epsilon(1)+i epsilon(2)) and refractive index (N=n+ik) of Ga2Se3 crystals were spectrally plotted from ellipsometric measurements conducted from 1.2eV to 6.2eV at 300K. From the analyses of second-energy derivatives of epsilon(1) and epsilon(2), interband transition energies (critical points) were determined. Absorption coefficient-photon energy dependency allowed us to achieve a band gap energy of 2.02eV. Wemple and DiDomenico single effective oscillator and Spitzer-Fan models were accomplished and various optical parameters of the crystal were reported in the present work