Elaboration de dispositifs MOS contenant des nanocristaux de silicium obtenus par PECVD pulsé

TOULOUSE3-BU Sciences (315552104) / SudocSudocFranceF

Direct Bonding and Debonding Approach of Ultrathin Glass Substrates for High Temperature Devices

The advent of flexible thin-film electronic devices on ultrathin substrates is driven by the need to develop alternative handling methods fully compatible with front-end and backend processes. The purpose of this work is to present a new handling approach for ultrathin glass substrates based on direct glass-glass bonding and peel-off debonding at room temperature. This concept is evaluated through the realization of thin-film batteries (500μm) without intermediate layer. The stack of thin film battery is fabricated using sequential physical vapor depositions at temperature values up to 400°C. The debond process is completed at room temperature by mechanical peel-off of the encapsulation film laminated on thin film battery. As the results, there is no sign of any crack of the ultrathin glass (<100μm) after debonding. Furthermore, the Electrochemical Impedance Spectroscopy (EIS) and galvanostatic cycling carried out before and after debonding process reveal that the device performances are slightly stable

Ultrathin Glass to Ultrathin Glass Bonding Using Laser Sealing Approach

International audienceThe advent of flexible thin-film electronic devices on ultrathin substrates is driven by the need to develop alternative handling methods fully compatible with front-end and back-end processes. The purpose of this work is to present a new handling approach for ultrathin glass substrates based on direct glass-glass bonding and peel-off debonding at room temperature. This concept is evaluated through the realization of thin-film batteries (500µm) without intermediate layer. The stack of thin film battery is fabricated using sequential physical vapor depositions at temperature values up to 400°C. The debond process is completed at room temperature by mechanical peel-off of the encapsulation film laminated on thin film battery. As the results, there is no sign of any crack of the ultrathin glass (<100µm) after debonding. Furthermore, the Electrochemical Impedance Spectroscopy (EIS) and galvanostatic cycling carried out before and after debonding process reveal that the device performances are slightly stable

Physicochemical and structural properties of nanocomposite SiCxOyHz films with embedded silver nanoparticles

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PECVD nanosilver embedded in organosilicon matrix for prevention of microbial adhesion

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Plasma-engineered polymer thin films with embedded nanosilver for prevention of fungal biofilm formation

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(Invited) Lithium-Based Components Integrated on Silicon: Disruptive, Promising and Credible Solutions for 5G & Beyond

International audienceFollowing a trend similar to Moore’s low which prevailed for decades for active circuits, RF integrated passive components have reinvented themselves over the years in order to sustain continuous performance and size requirements. Their roadmap is still unrolling, thanks to a wide variety of new materials integration: high-k dielectrics for capacitors [1] , [2] , magnetic material for inductors [3] , aluminium nitride [4] (now scandium doped) for RF filters, or more recently phase-change materials for RF switches [5] . In the last few years, RF integrated passives built upon Lithium-based materials have attracted strong attention because of their state-of-the-art performances and their direct integration on silicon wafers. Lithium-based piezoelectric materials are used since 40 years by the SAW filters industry, which processes LiTaO 3 (LTO) or LiNbO 3 (LNO) bulk wafers in dedicated fabs. Recently, however, layered SAW devices exploiting thin films of these materials directly on a silicon wafer have exhibited dramatically improved performances. These devices leverage the latest developments in single crystal Li-based layer transfer, or in deposition techniques (PVD, ALD [6] , Pulse-Laser-Deposition, ...) of epitaxial, textured, or amorphous Li-based thin films, all of which achievable in industrial grade semiconductor equipments. In this presentation, we will give an overview of the potential of integrating lithium-based materials on silicon through different examples of promising RF components for 5G. First, we will show how the availability of Li-based Piezoelectric-on-Insulator (POI) wafers [7] is a game changer for 5G filtering. We will present very promising perspectives regarding the development of LNO-based Bulk Acoustics Wave filters (BAW) [8] , [9] , [10] which aim at extending the application space of POI SAW filters towards the upper 5G bands and even Wi-Fi 6E [5-7 GHz] . Different examples of Li-based materials integrations will be given 3,4,5, [11] . Secondly, we will discuss the potential of a new type of Li-based hybrid micro supercapacitors integrated on silicon. LiPON thin films offer a unique combination of dual properties, being both a dielectric and an electrolyte [12] . Their integration on silicon is not only bringing potentially ultra-high capacitance densities, but also local on-chip energy storage for 5G components, opening a new paradigm in use of the device in a system [13] , [14] . After that, we will open the horizon of the potential of Li-based materials integration towards other types of RF devices, like RF switchs, and elaborate on their synergy with Li-transistors for neuromorphic applications [15] and with more conventional lithium microbatteries integrated on silicon [16] . Finally, the integration of Lithium in a silicon industrial environment and the remaining challenges will be discussed. The similarities and discrepancies of the different Li-based processes will be analyzed as well as the compatibility with a silicon CMOS and/or microsystem fab, and the potential for wafers size scaling. Risks like sensitivity to humidity and potential Li contamination will be outlined with some relevant preventive protocols in order to make the Lithium integration on silicon a real and credible disruptive solution regarding 5G challenges. [1] F. Roozeboom, et al. ECS 2007 [2] M. Bousquet et al., ECAPD 2014 [3] J. P. Michel et al., IEEE Trans. Magnetics 55, n°7, pp. 1-7 (2019) » [4] A. Reinhardt et al. , IFCS 2011 [5] A. Leon et al., IEEE Trans. Microwave Theory and Techniques, vol. 68, n°1, pp. 60-73 (2020)” [6] M. Bedjaoui et al. ECS Meeting (October 10-14, 2021). [7] E. Butaud et al. IEDM 2020 [8] M. Bousquet et al. , Proc. IEEE International Ultrasonics Symposium 2019. [9] M. Bousquet et al. , Proc. IEEE International Ultrasonics Symposium 2020. [10] A. Reinhardt et al. , Proc. Joint Conference of EFTF & IFCS 2021 [11] L. Sauze et al, Thin solid films, 726, may 2021 [12] L. Le Van-Jodin et al, Solid State ionic, 2013 [13] V. Sallaz et al, Journal of Power Source, 2020 [14] V. Sallaz et al. submitted to ECS 2021 [15] N-A Ngyuen et al,” submitted to ECS 2021 [16] S. Oukassi et al, IEDM 201

Plasma Ag nanoclusters/organosilicon matrix thin films for prevention of fungal biofilm formation

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Silver nanoparticle-containing polysiloxane films for prevention of microbial colonization

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Post-deposition annealing challenges for ALD Al0.5_{0.5}Si0.5_{0.5}Ox_x/n-GaN MOS devices

International audienceIn this work, we investigate the impact of high-temperature Post-Deposition annealing (PDA) on AlAl$_{0.5}$Si$_{0.5}$O$_x$ deposited by Atomic Layer Deposition (ALD). Reversed hysteresis is observed and explained by mobile charges originating from K$^+$ and Na$^+$ impurities. The high-temperature annealing does not cure the presence of these mobile charges. We also report the onset of film and interface degradation after annealing above 750°C under N$_2$, with both inhomogeneous aluminium and silicon composition, signs of AlSiO crystallization and interfacial gallium oxide growth