30,838 research outputs found
Large-Signal Simulation of 94 GHz Pulsed Silicon DDR IMPATTs Including the Temperature Transient Effect
In this paper large-signal modeling and simulation has been carried to study the frequency chirping due to temperature transients and the large-signal power and efficiency of pulsed silicon Double-Drift Region (DDR) Impact Avalanche Transit Time (IMPATT) device operating at 94 GHz. A large-signal simulation method based on non-sinusoidal voltage excitation incorporating the transient thermal effect has been developed by the authors. Results show that the device is capable of delivering a peak pulsed power output of 17.5 W with 12.8% efficiency when the voltage modulation is 60%. The maximum junction temperature rise is 350.2 K for a peak pulsed bias current of 6.79 A with 100 ns pulsewidth and 0.5 percent duty cycle; whereas the chirp bandwidth is 8.3 GHz
Conversion of glassy antiferromagnetic-insulating phase to equilibrium ferromagnetic-metallic phase by devitrification and recrystallization in Al substituted PrCaMnO
We show that PrCaMnO with 2.5% Al substitution and
LaCaMnO (LCMO) exhibit qualitatively similar and
visibly anomalous M-H curves at low temperature. Magnetic field causes a broad
first-order but irreversible antiferromagnetic (AF)-insulating (I) to
ferromagnetic (FM)-metallic (M) transition in both and gives rise to soft FM
state. However, the low temperature equilibrium state of
PrCaMnAlO (PCMAO) is FM-M whereas that
of LCMO is AF-I. In both the systems the respective equilibrium phase coexists
with the other phase with contrasting order, which is not in equilibrium, and
the cooling field can tune the fractions of the coexisting phases. It is shown
earlier that the coexisting FM-M phase behaves like `magnetic glass' in LCMO.
Here we show from specially designed measurement protocols that the AF-I phase
of PCMAO has all the characteristics of magnetic glassy states. It devitrifies
on heating and also recrystallizes to equilibrium FM-M phase after annealing.
This glass-like AF-I phase also shows similar intriguing feature observed in
FM-M magnetic glassy state of LCMO that when the starting coexisting fraction
of glass is larger, successive annealing results in larger fraction of
equilibrium phase. This similarity between two manganite systems with
contrasting magnetic orders of respective glassy and equilibrium phases points
toward a possible universality.Comment: Highlights potential of CHUF (Cooling and Heating in Unequal Fields),
a new measurement protoco
Self dual models and mass generation in planar field theory
We analyse in three space-time dimensions, the connection between abelian
self dual vector doublets and their counterparts containing both an explicit
mass and a topological mass. Their correspondence is established in the
lagrangian formalism using an operator approach as well as a path integral
approach. A canonical hamiltonian analysis is presented, which also shows the
equivalence with the lagrangian formalism. The implications of our results for
bosonisation in three dimensions are discussed.Comment: 15 pages,Revtex, No figures; several changes; revised version to
appear in Physical Review
Wigner's little group, gauge transformations and dimensional descent
We propose a technique called dimensional descent to show that Wigner's
little group for massless particles, which acts as a generator of gauge
transformation for usual Maxwell theory, has an identical role even for
topologically massive gauge theories. The examples of theory and
Maxwell-Chern-Simons theory are analyzed in details.Comment: LaTex, revised version shortened to 9 pages; To appear in Jour.Phys.
Studies on Some Properties of Silicon Brass
This study reveals that mechanical properties of silicon brass are superior and sea salt corrosion is of the same order as Naval and Admiralty brasses but inferior to aluminium brass. In condenser tube condition, silicon brass has only half the thermal conductivity of Naval or aluminium brass but corrosion resistance is of the same order. The stress corrosion resistance of silicon brass is much superio
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