Magnetoresistance and Anomalous Hall Effect of InSb Doped with Mn

Transport properties of polycrystalline (In, Mn)Sb samples are investigated. Behavior of the temperature and magnetic field dependencies of the resistivity, anomalous Hall coefficient and magnetoresistivity at low temperatures points out the influence of Mn complexes, Mn ions and nano- and microsizes MnSb precipitates on charge transport. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3361

Weak localization in InSb thin films heavily doped with lead

The paper reports on the investigations of the weak localization (WL) effects in 3D polycrystalline thin films of InSb. The films are closely compensated showing the electron concentration n>10^{16} cm^{-3} at the total concentration of the donor and acceptor type structural defects >10^{18} cm^{-3}. Unless Pb-doped, the InSb films do not show any measurable or show very small WL effect at 4.2 K. The Pb-doping to the concentration of the order of 10^{18} cm^{-3} leads to pronounced WL effects below 7 K. In particular, a clearly manifested SO scattering is observed. From the comparison of the experimental data on temperature dependence of the magnetoresistivity and sample resistance with the WL theory, the temperature dependence of the phase destroying time is determined. The determination is performed by fitting theoretical terms obtained from Kawabata's theory to experimental data on magnetoresistance. It is concluded that the dephasing process is connected to three separate interaction processes. The first is due to the SO scatterings and is characterized by temperature-independent relaxation time. The second is associated with the electron-phonon interaction. The third dephasing process is characterized by independent on temperature relaxation time tau_c. This relaxation time is tentatively ascribed to inelastic scattering at extended structural defects, like grain boundaries. The resulting time dephasing time shows saturation in its temperature dependence. The temperature dependence of the resistance of the InSb films can be explained by the electron-electron interaction for T2 K.Comment: 15 pages with 5 figure

Magnetotransport of indium antimonide doped with manganese

Magnetotransport, including the magnetoresistance (MR) and the Hall effect, isinvestigated in polycrystalline In1-xMnxSb samples with x = 0.02 – 0.06, containing nanosize MnSb precipitates. The relative MR, Δρ/ρ, is positive within the whole range of B= 0 – 10 T and T ~ 20 – 300 K. The Hall resistivity, ρH, exhibits a nonlinear dependence on B up to the room temperature.MR is interpreted with the two-band model, suggesting two types of holes with different concentration and mobility. In addition, analysis of ρH (B, T) is performed by taking into account both the normal and the anomalous contributions. The latter is attributable to the effect of MnSb nanoprecipitates, having the ferromagnetic Curie temperature well above 300 K

Magnetotransport of indium antimonide doped with manganese

Magnetotransport, including the magnetoresistance (MR) and the Hall effect, isinvestigated in polycrystalline In1-xMnxSb samples with x = 0.02 – 0.06, containing nanosize MnSb precipitates. The relative MR, Δρ/ρ, is positive within the whole range of B= 0 – 10 T and T ~ 20 – 300 K. The Hall resistivity, ρH, exhibits a nonlinear dependence on B up to the room temperature.MR is interpreted with the two-band model, suggesting two types of holes with different concentration and mobility. In addition, analysis of ρH (B, T) is performed by taking into account both the normal and the anomalous contributions. The latter is attributable to the effect of MnSb nanoprecipitates, having the ferromagnetic Curie temperature well above 300 K

Charge inhomogeneities and transport in semiconductor heterostructures with a Mn -layer

International audienc

Charge inhomogeneities and transport in semiconductor heterostructures with a Mn -layer

International audienc