Electron transport through antidot superlattices in Si/SiGeSi/SiGe heterostructures: new magnetoresistance resonances in lattices with large diameter antidots

In the present work we have investigated the transport properties in a number of Si/SiGe samples with square antidot lattices of different periods. In samples with lattice periods equal to 700 nm and 850 nm we have observed the conventional low-field commensurability magnetoresistance peaks consistent with the previous observations in GaAs/AlGaAs and Si/SiGe samples with antidot lattices. In samples with a 600 nm lattice period a new series of well-developed magnetoresistance oscillations has been found beyond the last commensurability peak which are supposed to originate from periodic skipping orbits encircling an antidot with a particular number of bounds.Comment: To appear in EuroPhys. Let

Unconventional Hall effect near charge neutrality point in a two-dimensional electron-hole system

The transport properties of the two-dimensional system in HgTe-based quantum wells containing simultaneously electrons and holes of low densities are examined. The Hall resistance, as a function of perpendicular magnetic field, reveals an unconventional behavior, different from the classical N-shaped dependence typical for bipolar systems with electron-hole asymmetry. The quantum features of magnetotransport are explained by means of numerical calculation of the Landau level spectrum based on the Kane Hamiltonian. The origin of the quantum Hall plateau {\sigma}xy = 0 near the charge neutrality point is attributed to special features of Landau quantization in our system.Comment: 8 pages, 7 figure

Quantum corrections to the conductivity and Hall coefficient of a 2D electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: transition from diffusive to ballistic regime

We report an experimental study of the quantum corrections to the longitudinal conductivity and the Hall coefficient of a low mobility, high density two-dimensional two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5 K - 110 K). This temperature range covers both the diffusive and the ballistic interaction regimes for our samples. It was therefore possible to study the crossover region for the longitudinal conductivity and the Hall effect