ФОТОТОК В СТРУКТУРАХ КРЕМНИЙ/ТИТАНАТ СТРОНЦИЯ/НИКЕЛЬ

The SrTiO3 (strontium titanate xerogel) films were fabricated on the substrates of monocrystalline silicon using the sol-gel method at the annealing temperature 750 °С. The upper nickel electrodes were fabricated using the magnetron sputtering, and the volt-amperic characteristics of the obtained structures were measured. Photocurrent was observed from the structure silicon/strontium titanate/nickel under illumination with the halogen lamp, as well as switching from low resistance state to high resistance state under and without illumination.Золь-гель методом синтезированы пленки титаната стронция SrTiO3 (ксерогель титаната стронция) на подложках монокристаллического кремния при температуре термообработки 750 °С. Методом магнетронного распыления сформированы верхние электроды из никеля и измерены вольт-амперные характеристики сформированных структур. Обнаружен фототок при освещении структуры кремний/титанат стронция/никель галогенной лампой, а также переключение из низкоомного состояния в высокоомное при напряжении около 10 В как при освещении, так и без него

ФОТОЛИТОГРАФИЯ НА ПЛЕНОЧНЫХ СТРУКТУРАХ КСЕРОГЕЛЬ/ПОРИСТЫЙ АНОДНЫЙ ОКСИД АЛЮМИНИЯ, СФОРМИРОВАННЫХ В РАЗЛИЧНЫХ ЭЛЕКТРОЛИТАХ

The results of study the morphology of the microstructured porous anodic alumina films formed using electrochemical anodization, sol-gel synthesis, photolithography and chemical etching are given. The metal mask was not used in photolithography, because of fabrication the continuous xerogel film. The perspective of application of these structures in planar optoelectronics and photocatalyses are discussed.Приведены результаты исследования морфологии микроструктурированных пленок пористого анодного оксида алюминия, сформированных с применением электрохимического анодирования, золь-гель синтеза, фотолитографии и химического травления. Для выполнения фотолитографии защитная металлическая маска не использовалась за счет формирования сплошной пленки ксерогеля. Обсуждаются перспективы применения таких структур в планарной оптоэлектронике и фотокатализе

ЗОЛЬ-ГЕЛЬ СИНТЕЗ ПЛЕНОК ТИТАНАТА СТРОНЦИЯ И ПЕРСПЕКТИВЫ ИХ ПРИМЕНЕНИЯ ДЛЯ ИЗГОТОВЛЕНИЯ ЭЛЕМЕНТОВ ЭЛЕКТРОННОЙ ТЕХНИКИ

The strontium titanate thin films were fabricated on silicon using the sol-gel method. The strontium titanate phase was registered with X-ray diffraction analysis after heat treatment in the temperature range 750-1000 °C. The films were deposited by spin-on technique and the film thickness was in the range of 90-250 nm depending on numbers of layer. The perspectives of developments of the sol-gel method for the formation of elements of electronic device as well as varistors and capacitors on the basis of SrTiO3 xerogels are discussed.Золь-гель методом получены пленки титаната стронция на подложках кремния. Фаза титаната стронция зарегистрирована методом рентгенофазового анализа после термообработки при температуре 750-1000 °С. Толщина пленок, полученных методом центрифугирования, изменяется от 90 до 250 нм в зависимости от числа формируемых слоев. Обсуждаются перспективы развития золь-гель метода для формирования пленочных элементов электронной техники, а также варисторов и конденсаторов, на основе ксерогелей SrTiO3

PHOTOLITHOGRAPHY OF FILM STRUCTURES XEROGEL/POROUS ANODIC ALUMINA PREPARED IN VARIOUS ELECTROLYTES

The results of study the morphology of the microstructured porous anodic alumina films formed using electrochemical anodization, sol-gel synthesis, photolithography and chemical etching are given. The metal mask was not used in photolithography, because of fabrication the continuous xerogel film. The perspective of application of these structures in planar optoelectronics and photocatalyses are discussed

Photocurrent in the structures of silicon / strontium titanate / nickel

The SrTiO3 (strontium titanate xerogel) films were fabricated on the substrates of monocrystalline silicon using the sol-gel method at the annealing temperature 750 °С. The upper nickel electrodes were fabricated using the magnetron sputtering, and the volt-amperic characteristics of the obtained structures were measured. Photocurrent was observed from the structure silicon/strontium titanate/nickel under illumination with the halogen lamp, as well as switching from low resistance state to high resistance state under and without illumination

SOL-GEL SYNTHESIS OF STRONTIUM TITANATE THIN FILMS AND PERSPECTIVES OF THEIR APPLICATIONS IN PRODUCTION OF ELEMENTS OF ELECTRONIC DEVICE

The strontium titanate thin films were fabricated on silicon using the sol-gel method. The strontium titanate phase was registered with X-ray diffraction analysis after heat treatment in the temperature range 750-1000 °C. The films were deposited by spin-on technique and the film thickness was in the range of 90-250 nm depending on numbers of layer. The perspectives of developments of the sol-gel method for the formation of elements of electronic device as well as varistors and capacitors on the basis of SrTiO3 xerogels are discussed