Nanoengineered Curie Temperature in Laterally-Patterned Ferromagnetic Semiconductor Heterostructures

We demonstrate the manipulation of the Curie temperature of buried layers of the ferromagnetic semiconductor (Ga,Mn)As using nanolithography to enhance the effect of annealing. Patterning the GaAs-capped ferromagnetic layers into nanowires exposes free surfaces at the sidewalls of the patterned (Ga,Mn)As layers and thus allows the removal of Mn interstitials using annealing. This leads to an enhanced Curie temperature and reduced resistivity compared to unpatterned samples. For a fixed annealing time, the enhancement of the Curie temperature is larger for narrower nanowires.Comment: Submitted to Applied Physics Letters (minor corrections

Operator algebra quantum homogeneous spaces of universal gauge groups

In this paper, we quantize universal gauge groups such as SU(\infty), as well as their homogeneous spaces, in the sigma-C*-algebra setting. More precisely, we propose concise definitions of sigma-C*-quantum groups and sigma-C*-quantum homogeneous spaces and explain these concepts here. At the same time, we put these definitions in the mathematical context of countably compactly generated spaces as well as C*-compact quantum groups and homogeneous spaces. We also study the representable K-theory of these spaces and compute it for the quantum homogeneous spaces associated to the universal gauge group SU(\infty).Comment: 14 pages. Merged with [arXiv:1011.1073

Flux through a hole from a shaken granular medium

We have measured the flux of grains from a hole in the bottom of a shaken container of grains. We find that the peak velocity of the vibration, vmax, controls the flux, i.e., the flux is nearly independent of the frequency and acceleration amplitude for a given value of vmax. The flux decreases with increasing peak velocity and then becomes almost constant for the largest values of vmax. The data at low peak velocity can be quantitatively described by a simple model, but the crossover to nearly constant flux at larger peak velocity suggests a regime in which the granular density near the container bottom is independent of the energy input to the system.Comment: 14 pages, 4 figures. to appear in Physical Review

Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor

The band structure of a prototypical dilute ferromagnetic semiconductor, Ga$_{1-x}$Mn$_{x}$As, is studied across the phase diagram via optical spectroscopy. We prove that the Fermi energy ($E_{F}$) resides in a Mn induced impurity band (IB). This conclusion is based upon careful analysis of the frequency and temperature dependence of the optical conductivity ($\sigma_{1}(\omega,T)$). From our analysis of $\sigma_{1}(\omega,T)$ we infer a large effective mass ($m^*$) of the carriers, supporting the view that conduction occurs in an IB. Our results also provide useful insights into the transport properties of Mn-doped GaAs.Comment: 4 pages, 4 figure

Antisite effect on ferromagnetism in (Ga,Mn)As

We study the Curie temperature and hole density of (Ga,Mn)As while systematically varying the As-antisite density. Hole compensation by As-antisites limits the Curie temperature and can completely quench long-range ferromagnetic order in the low doping regime of 1-2% Mn. Samples are grown by molecular beam epitaxy without substrate rotation in order to smoothly vary the As to Ga flux ratio across a single wafer. This technique allows for a systematic study of the effect of As stoichiometry on the structural, electronic, and magnetic properties of (Ga,Mn)As. For concentrations less than 1.5% Mn, a strong deviation from Tc ~ p^0.33 is observed. Our results emphasize that proper control of As-antisite compensation is critical for controlling the Curie temperatures in (Ga,Mn)As at the low doping limit.Comment: 10 pages, 7 figure

Capping-induced suppression of annealing in Ga(1-x)Mn(x)As epilayers

We have studied the effects of capping ferromagnetic Ga(1-x)Mn(x)As epilayers with a thin layer of undoped GaAs, and we find that even a few monolayers of GaAs have a significant effect on the ferromagnetic properties. In particular, the presence of a capping layer only 10 monolayers thick completely suppresses the enhancement of the ferromagnetism associated with low temperature annealing. This result, which demonstrates that the surface of a Ga(1-x)Mn(x)As epilayer strongly affects the defect structure, has important implications for the incorporation of Ga(1-x)Mn(x)As into device heterostructures.Comment: 13 pages with figures attatche

Magnetoresistance Anomalies in (Ga,Mn)As Epilayers with Perpendicular Magnetic Anisotropy

We report the observation of anomalies in the longitudinal magnetoresistance of tensile-strained (Ga,Mn)As epilayers with perpendicular magnetic anisotropy. Magnetoresistance measurements carried out in the planar geometry (magnetic field parallel to the current density) reveal "spikes" that are antisymmetric with respect to the direction of the magnetic field. These anomalies always occur during magnetization reversal, as indicated by a simultaneous change in sign of the anomalous Hall effect. The data suggest that the antisymmetric anomalies originate in anomalous Hall effect contributions to the longitudinal resistance when domain walls are located between the voltage probes. This interpretation is reinforced by carrying out angular sweeps of $\vec{H}$, revealing an antisymmetric dependence on the helicity of the field sweep.Comment: Submitted to Phys. Rev.

Optimal multistage schemes for Euler equations with residual smoothing

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/76583/1/AIAA-12860-858.pd

Stochastic Ballistic Annihilation and Coalescence

We study a class of stochastic ballistic annihilation and coalescence models with a binary velocity distribution in one dimension. We obtain an exact solution for the density which reveals a universal phase diagram for the asymptotic density decay. By universal we mean that all models in the class are described by a single phase diagram spanned by two reduced parameters. The phase diagram reveals four regimes, two of which contain the previously studied cases of ballistic annihilation. The two new phases are a direct consequence of the stochasticity. The solution is obtained through a matrix product approach and builds on properties of a q-deformed harmonic oscillator algebra.Comment: 4 pages RevTeX, 3 figures; revised version with some corrections, additional discussion and in RevTeX forma