14 research outputs found

    GaSbBi alloys and heterostructures: fabrication and properties

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    International audienceDilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antimonide based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2-5 µm). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is thus very challenging. This book chapter presents the most recent developments in the epitaxy and characterization of GaSbBi alloys and heterostructures

    ANNEALING OF HIGH DOSE IMPLANTED GaAs WITH HALOGEN LAMPS

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    Le recuit de GaAs implanté par un système de deux lampes à halogene est présenté. Le confinement de l'échantillon monté entre une plaque de silicium et une plaque de quartz permet d'obtenir une protection par contact. Cette configuration a permis l'étude par diffusion Raman de la reconstruction du réseau cristallin après irradiation ainsi que la limite de dégradation en surface du substrat par perte d'arsenic.The use of radiation from two halogene lamps to anneal implanted GaAs has been studied. Contact protection of the substrate is obtained by mounting it in a sandwich configuration between a silicon and a quartz plate. This configuration allows to measure by Raman scattering lattice recovery after irradiation and substrate surface degradation due to arsenic loss

    SOFT PHONON VALLEY NEAR THE TRANSITION TO AN INCOMMENSURATE PHASE IN BARIUM SODIUM NIOBATE

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    The dynamic characteristics of the tetragonal to incommensurate transition in Barium Sodium Niobate has been investigated. The precursor effects consist, in the tetragonal phase, of a soft phonon and a central peak

    RAMAN VIBRATIONAL STUDIES OF TRANSIENT ANNEALING OF GaAs AMORPHOUS THIN FILMS

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    Des couches endommagées par implantation ionique, à forte dose, dans GaAs ont été reconstruites à l'aide d'un laser Ruby pulsé (nsec), d'un laser Nd-YAG pulsé (psec) ou d'un système de lampes à halogène. La reconstruction du réseau cristallin par ces différentes techniques de recuit rapide est étudiée par diffusion Raman des phonons.A nanosecond pulsed ruby laser, a picosecond pulsed Nd-YAG laser and a set of halogen lamps are used to induce the reconstruction of the damage layer obtained by high dose ion implantation in single crystal GaAs. The lattice reconstruction by these different rapid irradiation sources has been examined by Raman scattering from the phonons

    The Contribution of the Solcon Instrument to the Long Term Total Solar Irradiance Observation

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    On century time scales, the variation in the total solar irradiance received by the earth is believed to be a major climate change driver. Therefore accurate and time stable measurements of the total solar irradiance are necessary. We present the latest contribution of the SOLar CONstant (SOLCON) instrument to these measurements, namely its measurements during the International Extreme Ultraviolet Hitchhiker (IEH) 3 space shuttle flight, and its results: the verification of the ageing of the Earth Radiation Budget Satellite (ERBS), and the measurement of the Space Absolute Radiometric Reference (SARR) adjustment coefficients for the Variability of solar IRradiance and Gravity Oscillations (VIRGO) radiometers
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