OPE analysis of the nucleon scattering tensor including weak interaction and finite mass effects

We perform a systematic operator product expansion of the most general form of the nucleon scattering tensor $W_{\mu \nu}$ including electro-magnetic and weak interaction processes. Finite quark masses are taken into account and a number of higher-twist corrections are included. In this way we derive relations between the lowest moments of all 14 structure functions and matrix elements of local operators. Besides reproducing well-known results, new sum rules for parity-violating polarized structure functions and new mass correction terms are obtained.Comment: 50 pages, additional references adde

The Role of Kinetic Energy Flux in the Convective Urca Process

The previous analysis of the convective Urca neutrino loss process in degenerate, convective, quasi-static, carbon-burning cores by Barkat and Wheeler omitted specific consideration of the role of the kinetic energy flux. The arguments of Barkat and Wheeler that steady-state composition gradients exist are correct, but chemical equilibrium does not result in net cooling. Barkat and Wheeler included a "work" term that effectively removed energy from the total energy budget that could only have come from the kinetic energy, which must remain positive. Consideration of the kinetic energy in the thermodynamics of the convective Urca process shows that the convective Urca neutrinos reduce the rate of increase of entropy that would otherwise be associated with the input of nuclear energy and slow down the convective current, but, unlike the "thermal" Urca process do not reduce the entropy or temperature.Comment: 16 pages, AAS LaTex, in press, Astrophysical Journal, September 20, Vol 52

Diffractive charged meson pair production

We investigate the possibility to measure the nonforward gluon distribution function by means of diffractively produced \pi^+\pi^- and K^+K^- pairs in polarized lepton nucleon scattering. The resulting cross sections are small and are dominated by the gluonic contribution. We find relatively large spin asymmetries, both for \pi^+\pi^- and for K^+K^- pairs.Comment: 15 pages, version with changed kinematical cuts, to be pubished in Phys.Lett.

The Convective Urca Process with Implicit Two-Dimensional Hydrodynamics

Consideration of the role of the convective flux in the thermodymics of the convective Urca neutrino loss process in degenerate, convective, quasi-static, carbon-burning cores shows that the convective Urca process slows down the convective current around the Urca-shell, but, unlike the "thermal" Urca process, does not reduce the entropy or temperature for a given convective volume. Here we demonstrate these effects with two-dimensional numerical hydrodynamical calculations. These two-dimensional implicit hydrodynamics calculations invoke an artificial speeding up of the nuclear and weak rates. They should thus be regarded as indicative, but still qualitative. We find that, compared to a case with no Urca-active nuclei, the case with Urca effects leads to a higher entropy in the convective core because the energy released by nuclear burning is confined to a smaller volume by the effective boundary at the Urca shell. All else being equal, this will tend to accelerate the progression to dynamical runaway. We discuss the open issues regarding the impact of the convective Urca process on the evolution to the "smoldering phase" and then to dynamical runaway.Comment: 22 pages, 11 figures, accepted for publication in the Astrophysical Journa

Bostonia Perplexa Gen. Et Sp. Nov., A Calamopityan Axis From The New Albany Shale Of Kentucky

Peer Reviewedhttps://deepblue.lib.umich.edu/bitstream/2027.42/141922/1/ajb206093.pd

Band offsets in Si/Si1–x–yGexCy heterojunctions measured by admittance spectroscopy

We have used admittance spectroscopy to measure conduction-band and valence-band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Valence-band offsets measured for Si/Si1–xGex heterojunctions were in excellent agreement with previously reported values. Incorporation of C into Si1–x–yGexCy lowers the valence- and conduction-band-edge energies compared to those in Si1–xGex with the same Ge concentration. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicate that the band alignment is Type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results

Electronic properties of Si/Si1–x–yGexCy heterojunctions

We have used admittance spectroscopy and deep-level transient spectroscopy to characterize electronic properties of Si/Si1–x–yGexCy heterostructures. Band offsets measured by admittance spectroscopy for compressively strained Si/Si1–x–yGexCy heterojunctions indicate that incorporation of C into Si1–x–yGexCy lowers both the valence- and conduction-band edges compared to those in Si1–xGex by an average of 107 ± 6 meV/% C and 75 ± 6 meV/% C, respectively. Combining these measurements indicates that the band alignment is type I for the compositions we have studied, and that these results are consistent with previously reported results on the energy band gap of Si1–x–yGexCy and with measurements of conduction band offsets in Si/Si1–yCy heterojunctions. Several electron traps were observed using deep-level transient spectroscopy on two n-type heterostructures. Despite the presence of a significant amount of nonsubstitutional C (0.29–1.6 at. %), none of the peaks appear attributable to previously reported interstitial C levels. Possible sources for these levels are discussed

Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions

Realization of group IV heterostructure devices requires the accurate measurement of the energy band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions. Using admittance spectroscopy, we have measured valence-band offsets in Si/Si1–xGex heterostructures and conduction-band and valence-band offsets in Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Measured Si/Si1–xGex valence-band offsets were in excellent agreement with previously reported values. For Si/Si1–x–yGexCy our measurements yielded a conduction-band offset of 100 ± 11 meV for a n-type Si/Si0.82Ge0.169C0.011 heterojunction and valence-band offsets of 118 ± 12 meV for a p-type Si/Si0.79Ge0.206C0.004 heterojunction and 223 ± 20 meV for a p-type Si/Si0.595Ge0.394C0.011 heterojunction. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicates that the band alignment is type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results

Deep-level transient spectroscopy of Si/Si1–x–yGexCy heterostructures

Deep-level transient spectroscopy was used to measure the activation energies of deep levels in n-type Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Four deep levels have been observed at various activation energies ranging from 231 to 405 meV below the conduction band. The largest deep-level concentration observed was in the deepest level and was found to be approximately 2 × 10^15 cm^–3. Although a large amount of nonsubstitutional C was present in the alloy layers (1–2 at. %), no deep levels were observed at any energy levels that, to the best of our knowledge, have been previously attributed to interstitial C