Two-dimensional electron gas formation in undoped In[0.75]Ga[0.25]As/In[0.75]Al[0.25]As quantum wells

We report on the achievement of a two-dimensional electron gas in completely undoped In[0.75]Al[0.25]As/In[0.75]Ga[0.25]As metamorphic quantum wells. Using these structures we were able to reduce the carrier density, with respect to reported values in similar modulation-doped structures. We found experimentally that the electronic charge in the quantum well is likely due to a deep-level donor state in the In[0.75]Al[0.25]As barrier band gap, whose energy lies within the In[0.75]Ga[0.25]As/In[0.75]Al[0.25]As conduction band discontinuity. This result is further confirmed through a Poisson-Schroedinger simulation of the two-dimensional electron gas structure.Comment: 17 pages, 6 figures, to be published in J. Vac. Sci. Technol.

Enhancement of field generation via maximal atomic coherence prepared by fast adiabatic passage in Rb vapor

We have experimentally demonstrated the enhancement of coherent Raman scattering in Rb atomic vapor by exciting atomic coherence with fractional stimulated Raman adiabatic passage. Experimental results are in good agreement with numerical simulations. The results support the possibility of increasing the sensitivity of CARS by preparing atomic or molecular coherence using short pulses