Spin-dependent Quantum Interference in Single-Wall Carbon Nanotubes with Ferromagnetic Contacts

We report the experimental observation of spin-induced magnetoresistance in single-wall carbon nanotubes contacted with high-transparency ferromagnetic electrodes. In the linear regime the spin-induced magnetoresistance oscillates with gate voltage in quantitative agreement with calculations based on a Landauer-Buttiker model for independent electrons. Consistent with this interpretation, we find evidence for bias-induced oscillation in the spin-induced magnetoresistance signal on the scale of the level spacing in the nanotube. At higher bias, the spin-induced magnetoresistance disappears because of a sharp decrease in the effective spin-polarization injected from the ferromagnetic electrodes.Comment: Replaced with published versio

Gated Spin Transport through an Individual Single Wall Carbon Nanotube

Hysteretic switching in the magnetoresistance of short-channel, ferromagnetically contacted individual single wall carbon nanotubes is observed, providing strong evidence for nanotube spin transport. By varying the voltage on a capacitively coupled gate, the magnetoresistance can be reproducibly modified between +10% and -15%. The results are explained in terms of wave vector matching of the spin polarized electron states at the ferromagnetic / nanotube interfaces.Comment: 14 pages, 5 figure

Imaging Inter-Edge State Scattering Centers in the Quantum Hall Regime

We use an atomic force microscope tip as a local gate to study the scattering between edge channels in a 2D electron gas in the quantum Hall regime. The scattering is dominated by individual, microscopic scattering centers, which we directly image here for the first time. The tip voltage dependence of the scattering indicates that tunneling occurs through weak links and localized states.Comment: 4 pages, 5 figure

Adsorption of Oxygen Molecules on Individual Carbon Single-walled Nanotubes

Our study of the adsorption of oxygen molecules on individual semiconductiong single-walled carbon nanotubes at ambient conditions reveals that the adsorption is physisorption, that the resistance without O2 increases by ~two orders of magnitude as compared to that with O2, and that the sensitive response is due to the pinning of the Fermi level near the top of the valence band of the tube resulting from impurity states of O2 appearing above the valence band.Comment: 16 pages, 4 figure

Separately contacted edge states: A new spectroscopic tool for the investigation of the quantum Hall effect

Using an innovative combination of a quasi-Corbino sample geometry and the cross-gate technique, we have developed a method that enables us to separately contact single edge channels in the quantum Hall regime and investigate equilibration among them. Performing 4-point resistance measurements, we directly obtain information on the energetic and geometric structure of the edge region and the equilibration-length for current transport across the Landau- as well as the spin-gap. Based on an almost free choice in the number of participating edge channels and their interaction-length a systematic investigation of the parameter-space becomes possible.Comment: 8 pages, 7 figure

Effect of incoherent scattering on shot noise correlations in the quantum Hall regime

We investigate the effect of incoherent scattering in a Hanbury Brown and Twiss situation with electrons in edge states of a three-terminal conductor submitted to a strong perpendicular magnetic field. The modelization of incoherent scattering is performed by introducing an additional voltage probe through which the current is kept equal to zero which causes voltage fluctuations at this probe. It is shown that inelastic scattering can lead in this framework to positive correlations, whereas correlations remain always negative for quasi-elastic scattering.Comment: 5 pages latex, 5 eps figure

Individual scatterers as microscopic origin of equilibration between spin- polarized edge channels in the quantum Hall regime

The equilibration length between spin-polarized edge states in the Quantum Hall regime is measured as a function of a gate voltage applied to an electrode on top of the edge channels. Reproducible fluctuations in the coupling are observed and interpreted as a mesoscopic fingerprint of single spin-flip scatterers which are turned on and off. A model to analyze macroscopic edge state coupling in terms of individual scatterers is developed, and characteristic values for these scatterers in our samples are extracted. For all samples investigated, the distance between spin-flip scatterers lies between the Drude and the quantum scattering length.Comment: 4 pages, 2 figure

Dynamic nuclear polarization at the edge of a two-dimensional electron gas

We have used gated GaAs/AlGaAs heterostructures to explore nonlinear transport between spin-resolved Landau level (LL) edge states over a submicron region of two-dimensional electron gas (2DEG). The current I flowing from one edge state to the other as a function of the voltage V between them shows diode-like behavior---a rapid increase in I above a well-defined threshold V_t under forward bias, and a slower increase in I under reverse bias. In these measurements, a pronounced influence of a current-induced nuclear spin polarization on the spin splitting is observed, and supported by a series of NMR experiments. We conclude that the hyperfine interaction plays an important role in determining the electronic properties at the edge of a 2DEG.Comment: 8 pages RevTeX, 7 figures (GIF); submitted to Phys. Rev.

Phenomenological Understanding of a Transport Regime with Reflection Symmetry in the Quantum Hall System in a Composite Fermion Picture

In this paper, we present a phenomenological picture based on the composite fermion theory, in responding to the recent discovery by Shahar et al. of a new transport regime near the transition from a $\nu=1$ quantum Hall liquid to a Hall insulator(ref[8]). In this picture, the seemingly unexpected reflection symmetry in the longitudinal resistivity $\rho_{xx}$ can be understood clearly as due to the symmetry of the gapful excitations which dominate $\sigma_{xx}$ across the transition, and the abrupt change in $\sigma_{xy}$ at the transition. The parameter $\alpha$ in the linear fit of $\nu_0(T)$ in ref[8] is also given a simple physical meaning and the effective mass can be calculated from $\alpha$, which gives a reasonable value of several electron band mass. When taking into account the result of network model, the almost invariant Hall resistivity $\rho_{xy}$ across the transition is also well-understood.Comment: 4 pages, RevTex, final version to appear in Phys.Rev.