31 research outputs found

    Hysteretic magnetoresistance and unconventional anomalous Hall effect in the frustrated magnet TmB_4

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    We study TmB_4, a frustrated magnet on the Archimedean Shastry-Sutherland lattice, through magnetization and transport experiments. The lack of anisotropy in resistivity shows that TmB_4 is an electronically three-dimensional system. The magnetoresistance (MR) is hysteretic at low-temperature even though a corresponding hysteresis in magnetization is absent. The Hall resistivity shows unconventional anomalous Hall effect (AHE) and is linear above saturation despite a large MR. We propose that complex structures at magnetic domain walls may be responsible for the hysteretic MR and may also lead to the AHE

    Quadratic to linear magnetoresistance tuning in TmB4

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    The change of a material's electrical resistance (R) in response to an external magnetic field (B) provides subtle information for the characterization of its electronic properties and has found applications in sensor and storage related technologies. In good metals, Boltzmann's theory predicts a quadratic growth in magnetoresistance (MR) at low B, and saturation at high fields. On the other hand, a number of nonmagnetic materials with weak electronic correlation and low carrier concentration for metallicity, such as inhomogeneous conductors, semimetals, narrow gap semiconductors and topological insulators, two-dimensional electron gas (2DEG) show positive, non-saturating linear magnetoresistance (LMR). However, observation of LMR in single crystals of a good metal is rare. Here we present low-temperature, angle dependent magnetotransport in single crystals of the antiferromagnetic metal, TmB4. We observe large, positive and anisotropic MR(B), which can be tuned from quadratic to linear by changing the direction of the applied field. In view of the fact that isotropic, single crystalline metals with large Fermi surface (FS) are not expected to exhibit LMR, we attribute our observations to the anisotropic FS topology of TmB4. Furthermore, the linear MR is found to be temperature-independent, suggestive of quantum mechanical origin.Comment: 14 pages, 5 figures, Accepted version of PR

    Ferroelectricity in underdoped La-based cuprates

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    Doping a parent antiferromagnetic Mott insulator in cuprates leads to short-range electronic correlations and eventually to high-Tc superconductivity. However, the nature of charge correlations in the lightly doped cuprates remains unclear. Understanding the intermediate electronic phase in the phase diagram (between the parent insulator and the high-Tc superconductor) is expected to elucidate the complexity both inside and outside the superconducting dome, and in particular in the underdoped region. One such phase is ferroelectricity whose origin and relation to the properties of high-Tc superconductors is subject of current research. Here we demonstrate that ferroelectricity and the associated magnetoelectric coupling are in fact common in La-214 cuprates namely, La2x_{2-x}Srx_xCuO4_4, La2_2Lix_xCu1x_{1-x}O4_4 and La2_2CuO4+x_{4+x}. It is proposed that ferroelectricity results from local CuO6_6 octahedral distortions, associated with the dopant atoms and/or clustering of the doped charge carriers, which break spatial inversion symmetry at the local scale whereas magnetoelectric coupling can be tuned through Dzyaloshinskii-Moriya interaction.Comment: 13 pages, 12 figure

    Hysteretic magnetoresistance and unconventional anomalous Hall effect in the frustrated magnet TmB4

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    We study TmB4, a frustrated magnet on the Archimedean Shastry-Sutherland lattice, through magnetization and transport experiments. The lack of anisotropy in resistivity shows that TmB4 is an electronically three-dimensional system. The magnetoresistance (MR) is hysteretic at low temperature even though a corresponding hysteresis in magnetization is absent. The Hall resistivity shows unconventional anomalous Hall effect (AHE) and is linear above saturation despite a large MR. We propose that complex structures at magnetic domain walls may be responsible for the hysteretic MR and may also lead to the AHE.This article is published as Sunku, Sai Swaroop, Tai Kong, Toshimitsu Ito, Paul C. Canfield, B. Sriram Shastry, Pinaki Sengupta, and Christos Panagopoulos. "Hysteretic magnetoresistance and unconventional anomalous Hall effect in the frustrated magnet TmB 4." Physical Review B 93, no. 17 (2016): 174408. DOI: 10.1103/PhysRevB.93.174408. Posted with permission.</p

    Highly stable CsPbBr3/ PMA perovskite nanocrystals for improved optical performance

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    In this study, to address the stability issues, we synthesized a CsPbBr3-coated poly (maleic anhydride-alt-1-octadecene) (CsPbBr3/PMA) using a modified hot-injection method. The CsPbBr3/PMA perovskite nanocrystals (PNCs) exhibited effective green emission at 522 nm with an improved photoluminescence quantum yield (86.8 %) compared to traditional CsPbBr3 PNCs (54.2 %). The ligands in the polymer coating can bond with the uncoordinated Pb and Br ions on the surface of PNCs to minimize surface defects and avoid exposure to the external environment, enhancing the stability of the perovskites. Time-resolved photoluminescence spectra showed longer lifetimes for CsPbBr3/PMA PNCs, while transient absorption measurements provided valuable insights into the intraband hot-exciton relaxation and recombination. We demonstrate the potential application of CSPbBr3/PMA in a down-conversion white-light-emitting diode (LED) by coupling green CsPbBr3/PMA and red K2SiF6:Mn4+ phosphor-coated glass slides onto a 455-nm blue GaN LED. The white LED produced a white light with the International Commission on Illumination color coordinates of (0.323, 0.345), luminous efficiency of 58.4 lm/W, and color rendering index of 83.2. The fabricated, white-LED system obtained a wide color gamut of 125.3 % of the National Television Standards Committee and 98.9 % of Rec. 2020. The findings demonstrate that CsPbBr3/PMA can be an efficient down-conversion material for white LEDs and backlighting

    Quadratic to linear magnetoresistance tuning in TmB4

    Get PDF
    The change of a material's electrical resistance (R) in response to an external magnetic field (B) provides subtle information for the characterization of its electronic properties and has found applications in sensor and storage related technologies. In good metals, Boltzmann's theory predicts a quadratic growth in magnetoresistance (MR) at low B and saturation at high fields. On the other hand, a number of nonmagnetic materials with weak electronic correlation and low carrier concentration for metallicity, such as inhomogeneous conductors, semimetals, narrow gap semiconductors and topological insulators, and two dimensional electron gas, show positive, nonsaturating linear magnetoresistance (LMR). However, observation of LMR in single crystals of a good metal is rare. Here we present low-temperature, angle-dependent magnetotransport in single crystals of the antiferromagnetic metal, TmB4. We observe large, positive, and anisotropic MR(B), which can be tuned from quadratic to linear by changing the direction of the applied field. In view of the fact that isotropic, single crystalline metals with large Fermi surface (FS) are not expected to exhibit LMR, we attribute our observations to the anisotropic FS topology of TmB4. Furthermore, the linear MR is found to be temperature independent, suggestive of quantum mechanical origin.</p
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