247 research outputs found

    Progressive damage in stitched composites: Static tensile tests and tension-tension fatigue

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    The paper describes progressive damage in static tensile tests and tension-tension fatigue in structurally stitched carbon/epoxy NCF composites, in comparison with their non-stitched counterparts. Analogies between damage development in quasi-static tension and tension-tension fatigue are analyzed and links between the damage initiation thresholds in quasi-static tests and fatigue life are established

    Mixing of fermion fields of opposite parities and baryon resonances

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    We consider a loop mixing of two fermion fields of opposite parities whereas the parity is conserved in a Lagrangian. Such kind of mixing is specific for fermions and has no analogy in boson case. Possible applications of this effect may be related with physics of baryon resonances. The obtained matrix propagator defines a pair of unitary partial amplitudes which describe the production of resonances of spin JJ and different parity 1/2±{1/2}^{\pm} or 3/2±{3/2}^{\pm}. The use of our amplitudes for joint description of πN\pi N partial waves P13P_{13} and D13D_{13} shows that the discussed effect is clearly seen in these partial waves as the specific form of interference between resonance and background. Another interesting application of this effect may be a pair of partial waves S11S_{11} and P11P_{11} where the picture is more complicated due to presence of several resonance states.Comment: 22 pages, 6 figures, more detailed comparison with \pi N PW

    Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier

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    Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity measurements in the temperature range 4-300 K and magnetotransport in magnetic fields up to 12 T. The (subband) carrier concentrations and mobilities are extracted from the Hall data and Shubnikov-de Haas oscillations. We find that the transport parameters are strongly affected by the insertion of the AlAs central barrier. Photoluminescence spectra, measured at 77 K, show an increase of the transition energies upon insertion of the barrier. The transport and optical data are analyzed with help of self-consistent calculations of the subband structure and envelope wave functions. Insertion of the AlAs central barrier changes the spatial distribution of the electron wave functions and leads to the formation of hybrid states, i.e. states which extend over the InGaAs and the delta-doped layer quantum wells.Comment: 14 pages, pdf fil
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